EMP109-P1 specifications are subjec t to change without notice. excelics semiconductor, inc. 310 de guigne drive, sunnyvale, ca 94085 page 1 of 1 phone: 408-737-1711 fax: 408-737-1868 web: www.excelics.com revised july 2004 issued date: 07-01-04 5.0 ? 6. 5 ghz power amplifier mmic optional packaging solutions are available contact the excelics sales team for details. features ? 5.0 ? 6.5 ghz operating frequency range ? 26.5dbm output power at 1db compression ? 20.0 db typical small signal gain ? -40dbc oimd3 @each tone pout 16.5dbm applications ? point-to-point and point-to-multipoint radio ? military radar systems caution! esd sensitive device. electrical characteristics (t a = 25 c, 50 ohm, vdd=7v, idq=400ma) symbol parameter/test conditions min typ max units f operating frequency range 5.0 6.5 ghz p1db output power at 1db gain compression 25.0 26.5 dbm gss small signal gain 17.0 20.0 db oimd3 output 3 rd order intermodulation distortion @ ? f=10mhz, each tone pout 16.5dbm -40 dbc input rl input return loss -12 db output rl output return loss -6 db idss saturate drain current v ds =3v, v gs =0v 496 620 744 ma v dd power supply voltage 7 8 v rth thermal resistance (au-sn eutectic attach) 15 o c/w tb operating base plate temperature - 35 + 85 oc absolute maximum ratings for continuous operation 1,2 symbol characteristic value v ds drain to source voltage 8 v v gs gate to source voltage - 4 v i dd drain current idss i gsf forward gate current 9 ma p in input power @ 3db compression t ch channel temperature 150c t stg storage temperature -65/150c p t total power dissipation 7.6w 1. operating the device beyond any of the above rating may result in permanent damage. 2. bias conditions must also satisfy the following equation v ds *i ds < (t ch ?t hs )/r th ; where t hs = ambient temperature
|
