marconi caswell limited, caswell, towcester, northamptonshire, nn12 8eq telephone: + 44 (0) 1327 350581 fax: + 44 (0) 1327 356775 website: www.caswelltechnology .com caswell technology is the trading name of marconi caswell limited which is a wholly owned subsidiary of marconi plc the data and product specifications are subject to change without notice. 462/sm/02348/000 issue 2 a marconi company hemt driver amplifier 8.5 ? 10.5ghz features 26dbm output power @6v 18db typical gain small 2.49 x 1.4mm die size description the P35-5122-000-200 is a high performance 8.5-10.5ghz gallium arsenide driver amplifier. this product is intended for use in instrumentation, communications & electronic warfare applications. the die is fabricated using caswell technology's 0 .20m gate length, phemt process and is fully protected using silicon nitride passivation for excellent performance and reliability. electrical performance ambient temperature 22 3 c, z o = 50 w , vd1 & vd2 = 5v, vg1 set for id1=100ma, vg2 set for id2 = 170ma parameter conditions min typ max units small signal gain 8.5 ? 10.5ghz - 18 - db input return loss 8.5 ? 10.5ghz - 15 - db output return loss 8.5 ? 10.5ghz - 15 - db output power at 8.5 ? 10.5ghz - - - - 1db gain compression 8.5 ? 10.5ghz - 25 - dbm max (pae) 8.5 ? 10.5ghz - 20 - % total circuit current - 270 - ma gate voltage; vg1, vg2 - -0.4 - v notes 1. all parameters measured on wafer P35-5122-000-200
marconi caswell limited, caswell, towcester, northamptonshire, nn12 8eq telephone: + 44 (0) 1327 350581 fax: + 44 (0) 1327 356775 website: www.caswelltechnology .com caswell technology is the trading name of marconi caswell limited which is a wholly owned subsidiary of marconi plc the data and product specifications are subject to change without notice. 462/sm/02348/000 issue 2 a marconi company typical rfow performance (---- with bondwires) gain 0 2 4 6 8 10 12 14 16 18 20 8.0 8.5 9.0 9.5 10.0 10.5 11.0 frequency (ghz) gain (db) reverse isolation 0 20 40 60 8.0 8.5 9.0 9.5 10.0 10.5 11.0 frequency (ghz) isolation (db) input return loss 0 5 10 15 20 25 8.0 8.5 9.0 9.5 10.0 10.5 11.0 frequency (ghz) return loss (db) output return loss 0 5 10 15 20 25 8.0 8.5 9.0 9.5 10.0 10.5 11.0 frequency (ghz) return loss (db) output power @ 1db compression (5v) 20 21 22 23 24 25 26 27 28 8.0 8.5 9.0 9.5 10.0 10.5 11.0 frequncy (ghz) pout (dbm) pout vs pin (5v) 8 10 12 14 16 18 20 22 24 26 28 -6 -4 -2 0 2 4 6 8 pin (dbm) pout (dbm) 8 ghz 9 ghz 10 ghz
marconi caswell limited, caswell, towcester, northamptonshire, nn12 8eq telephone: + 44 (0) 1327 350581 fax: + 44 (0) 1327 356775 website: www.caswelltechnology .com caswell technology is the trading name of marconi caswell limited which is a wholly owned subsidiary of marconi plc the data and product specifications are subject to change without notice. 462/sm/02348/000 issue 2 a marconi company typical rfow performance gain vs pin (5v) 14 15 16 17 18 19 20 -6 -4 -2 0 2 4 6 8 pin (dbm) gain (db) 8 ghz 9 ghz 10 ghz current vs pin (5v) 200 225 250 275 300 325 350 375 400 425 450 -6 -4 -2 0 2 4 6 8 pin (dbm) current ids (ma) 8 ghz 9 ghz 10 ghz pae vs pin(5v) 0 5 10 15 20 25 -6 -4 -2 0 2 4 6 8 pin (dbm) pae (%) 8ghz 9 ghz 10 ghz output power @ 1db compression (6v) 20 21 22 23 24 25 26 27 28 8.0 8.5 9.0 9.5 10.0 10.5 11.0 frequncy (ghz) pout (dbm) pout vs pin (6v) 8 10 12 14 16 18 20 22 24 26 28 -6 -4 -2 0 2 4 6 8 pin (dbm) pout (dbm) 8 ghz 9 ghz 10 ghz gain vs pin (6v) 14 15 16 17 18 19 20 -6 -4 -2 0 2 4 6 8 pin (dbm) gain (db) 8 ghz 9 ghz 10 ghz
marconi caswell limited, caswell, towcester, northamptonshire, nn12 8eq telephone: + 44 (0) 1327 350581 fax: + 44 (0) 1327 356775 website: www.caswelltechnology .com caswell technology is the trading name of marconi caswell limited which is a wholly owned subsidiary of marconi plc the data and product specifications are subject to change without notice. 462/sm/02348/000 issue 2 a marconi company typical rfow performance current vs pin (6v) 200 225 250 275 300 325 350 375 400 425 450 -6 -4 -2 0 2 4 6 8 pin (dbm) current ids (ma) 8 ghz 9 ghz 10 ghz pae vs pin(6v) 0 5 10 15 20 25 -6 -4 -2 0 2 4 6 8 pin (dbm) pae (%) 8ghz 9 ghz 10 ghz
marconi caswell limited, caswell, towcester, northamptonshire, nn12 8eq telephone: + 44 (0) 1327 350581 fax: + 44 (0) 1327 356775 website: www.caswelltechnology .com caswell technology is the trading name of marconi caswell limited which is a wholly owned subsidiary of marconi plc the data and product specifications are subject to change without notice. 462/sm/02348/000 issue 2 a marconi company typical s-parameters (rfow) frequency s11 s21 s12 s22 ( ghz) mag angle mag angle mag angle mag angle 8.5 0.29 149.3 8.32 83.3 0.0029 -132.2 0.29 163.3 8.75 0.23 133.1 8.54 65.3 0.0031 -146.6 0.26 163 9 0.16 110.8 8.71 46.6 0.0032 -162.6 0.23 162.1 9.25 0.11 73.3 8.82 27.1 0.0034 -178.5 0.20 160.9 9.5 0.10 15.9 8.82 6.7 0.0035 164.8 0.17 157.4 9.75 0.15 -26 8.70 -14.6 0.0037 146.6 0.14 152.1 10 0.21 -51.3 8.41 -36.8 0.0036 127.3 0.10 140.5 10.25 0.27 -69.2 7.92 -59.9 0.0036 108 0.05 112.7 10.5 0.33 -83.1 7.25 -83.7 0.0035 87.4 0.05 28.1
marconi caswell limited, caswell, towcester, northamptonshire, nn12 8eq telephone: + 44 (0) 1327 350581 fax: + 44 (0) 1327 356775 website: www.caswelltechnology .com caswell technology is the trading name of marconi caswell limited which is a wholly owned subsidiary of marconi plc the data and product specifications are subject to change without notice. 462/sm/02348/000 issue 2 a marconi company chip outline die size: 2.49 x 1.4mm rf bond pads (1 & 8): 120 x 80 m m all other bond pads: 120 m m x 120 m m die thickness: 100 m m pad details pad function 1 rf input 2 n/c 3 n/c 4 vg1 5 vd1 6 vg2 7 vd2 8 rf output
marconi caswell limited, caswell, towcester, northamptonshire, nn12 8eq telephone: + 44 (0) 1327 350581 fax: + 44 (0) 1327 356775 website: www.caswelltechnology .com caswell technology is the trading name of marconi caswell limited which is a wholly owned subsidiary of marconi plc the data and product specifications are subject to change without notice. 462/sm/02348/000 issue 2 a marconi company handling and assembly information gallium arsenide (gaas) devices are susceptible to electrostatic and mechanical damage. dice are supplied in antistatic containers, which should be opened in cleanroom conditions at an appropriately grounded anti-static workstation. devices need careful handling using correctly designed collets, vacuum pickups or, with care, sharp tweezers. gaas products from caswell technology?s phemt foundry process are 100 m m thick and have through gaas vias to enable grounding to the circuit. windows in the surface passivation above the bond pads are provided to allow wire bonding to the die. the surface to which the die are to be attached should be cleaned with a proprietary de-greasing cleaner. eutectic mounting should be used and entails the use of a gold-tin ( ausn) preform, approximately 0.001 2 thick, placed between the die and the attachment surface. the preferred method of mounting is the use of a machine such as a mullins 8-140 die bonder. this utilises a heated collet and workstation with a facility for applying a scrubbing action to ensure total wetting and avoid the formation of voids. dry nitrogen gas is directed across the work piece. the gold-tin eutectic (80% au 20% sn) has a melting point of approximately 280 c (note: gold germanium with a higher melting temperature should be avoided, in particular for mmics). the work station temperature should be 310 c 10 c. the collet should be heated, and the die pre-heated to avoid excessive thermal shock. the strength of the bonding formed by this method will result in fracture of the die, rather than the bond under die strength testing. the P35-5122-000-200 amplifier die has gold bond pads. the recommended wire bonding procedure uses 25 m m (0.001?) 99.99% pure gold wire with 0.5-2% elongation. thermo-compression wedge bonding is preferred though thermosonic wire bonding may be used providing the ultrasonic content of the bond is minimised. a work station temperature of 260 c 10 c with a wedge tip temperature of 120 c 10 c is recommended. the wedge force should be 45 5 grams. bonds should be made from the bond pads on the die to the package or substrate. the rf bond pads at the input and output are 120 m m x 80 m m; all other bond pads are 120 m m x 120 m m. the P35-5122-000-200 has been designed to include the inductance of two 25 m m bond wires at both the input and output, facilitating the integration of the die into a 50 w environment, these should be kept to a minimum length. operating and biasing of the P35-5122-000-200 the P35-5122-000-200 is a two-stage low noise amplifier. the drain biases for both stages (vd1 & vd2) are accessible and should be set to 5 volts. the gate voltages (vg1 & vg2) are set to give 100ma of drain current in the first stage and 170ma in the second stage drain. the separate drain and gate voltage supplies for both stages can be combined into single supplies (vdd & vgg). as with most gaas devices gate voltages should be applied before connecting the drain supply. dc bias supplies should be decoupled to ground using 100pf chip capacitors placed close to the chip with short bondwires to the amplifier bond pads.
marconi caswell limited, caswell, towcester, northamptonshire, nn12 8eq telephone: + 44 (0) 1327 350581 fax: + 44 (0) 1327 356775 website: www.caswelltechnology .com caswell technology is the trading name of marconi caswell limited which is a wholly owned subsidiary of marconi plc the data and product specifications are subject to change without notice. 462/sm/02348/000 issue 2 a marconi company typical bonding detail absolute maximum ratings max vdd +7v max vgg -2v max channel temperature 150 c storage temperature -65 c to +150 c ordering information P35-5122-000-200
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