cascadable silicon bipolar mmic amplifiers technical data features ? cascadable 50 w gain block ? 3 db bandwidth: dc to 2.7 ghz ? 12.0 db typical gain at 1.0 ghz ? unconditionally stable (k>1) ? cost effective ceramic microstrip package msa-0235, -0236 35 micro-x package [1] description the msa-0235 is a high perfor- mance silicon bipolar monolithic microwave integrated circuit (mmic) housed in a cost effective, microstrip package. this mmic is designed for use as a general typical biasing configuration c block c block r bias v cc > 7 v v d = 5 v rfc (optional) in out msa 4 1 2 3 note: 1. short leaded 36 package available upon request. purpose 50 w gain block. typical applications include narrow and broad band if and rf amplifiers in industrial and military applica- tions. the msa-series is fabricated using agilents 10 ghz f t , 25 ghz f max , silicon bipolar mmic process which uses nitride self-alignment, ion implantation, and gold metalli- zation to achieve excellent performance, uniformity and reliability. the use of an external bias resistor for temperature and current stability also allows bias flexibility. available in cut lead version (package 36) as MSA-0236.
2 msa-0235, -0236 absolute maximum ratings parameter absolute maximum [1] device current 60 ma power dissipation [2,3] 325 mw rf input power +13 dbm junction temperature 200 c storage temperature [4] C65 to 200 c thermal resistance [2,5] : q jc = 145 c/w notes: 1. permanent damage may occur if any of these limits are exceeded. 2. t case = 25 c. 3. derate at 6.9 mw/ c for t c > 153 c. 4. storage above +150 c may tarnish the leads of this package making it difficult to solder into a circuit. 5. the small spot size of this technique results in a higher, though more accurate determination of q jc than do alternate methods. see measure- ments section thermal resistance for more information. g p power gain (|s 21 | 2 ) f = 0.1 ghz db 11.5 12.5 13.5 d g p gain flatness f = 0.1 to 1.6 ghz db 0.6 1.0 f 3 db 3 db bandwidth ghz 2.7 input vswr f = 0.1 to 3.0 ghz 1.2:1 output vswr f = 0.1 to 3.0 ghz 1.4:1 nf 50 w noise figure f = 1.0 ghz db 6.5 p 1 db output power at 1 db gain compression f = 1.0 ghz dbm 4.5 ip 3 third order intercept point f = 1.0 ghz dbm 17.0 t d group delay f = 1.0 ghz psec 125 v d device voltage v 4.5 5.0 5.5 dv/dt device voltage temperature coefficient mv/ c C8.0 note: 1. the recommended operating current range for this device is 18 to 40 ma. typical performance as a function of current is on the following page. electrical specifications [1] , t a = 25 c symbol parameters and test conditions: i d = 25 ma, z o = 50 w units min. typ. max. vswr part number ordering information part number no. of devices container msa-0235 10 strip MSA-0236-blk 100 antistatic bag MSA-0236-tr1 1000 7" reel for more information refer to packaging section, tape and reel packaging for semiconductor devices.
3 msa-0235, -0236 typical scattering parameters (z o = 50 w , t a = 25 c, i d = 25 ma) freq. ghz mag ang db mag ang db mag ang mag ang 0.1 .08 170 12.6 4.25 176 C18.6 .118 2 .16 C6 0.2 .08 163 12.5 4.23 171 C18.5 .119 2 .15 C10 0.4 .08 147 12.5 4.19 161 C18.4 .120 4 .15 C21 0.6 .08 130 12.4 4.14 152 C18.3 .121 4 .15 C30 0.8 .07 112 12.2 4.09 143 C18.1 .125 7 .15 C39 1.0 .07 91 12.1 4.02 134 C18.0 .126 10 .15 C46 1.5 .06 47 11.6 3.80 112 C17.3 .137 11 .13 C66 2.0 .03 C1 11.0 3.53 91 C16.3 .153 10 .11 C89 2.5 .03 C115 10.2 3.24 75 C15.4 .169 12 .09 C111 3.0 .09 C157 9.3 2.92 57 C15.1 .176 8 .08 C127 3.5 .16 C175 8.3 2.60 39 C14.4 .190 3 .09 C129 4.0 .20 173 7.2 2.29 23 C14.1 .198 C2 .11 C118 5.0 .27 136 5.2 1.81 C6 C13.5 .211 C11 .15 C117 6.0 .41 94 3.2 1.44 C33 C13.5 .212 C24 .11 C148 a model for this device is available in the device models section. s 11 s 21 s 12 s 22 typical performance, t a = 25 c (unless otherwise noted) g p (db) 0.1 0.3 0.5 1.0 3.0 6.0 frequency (ghz) figure 1. typical power gain vs. frequency, t a = 25 c, i d = 25 ma. i d (ma) figure 3. power gain vs. current. 4 6 8 10 12 14 0 2 4 6 8 10 12 14 g p (db) 15 25 30 40 35 20 gain flat to dc 6.0 5.5 6.5 7.0 7.5 nf (db) frequency (ghz) figure 6. noise figure vs. frequency. 0.1 0.2 0.3 0.5 2.0 1.0 4.0 0.1 0.2 0.3 0.5 2.0 1.0 4.0 frequency (ghz) figure 5. output power at 1 db gain compression vs. frequency. 0 2 4 6 8 10 12 p 1 db (dbm) i d = 40 ma i d = 18 ma i d = 25 ma v d (v) figure 2. device current vs. voltage. 0 10 20 30 40 i d (ma) 0 2 34 56 1 t c = +125 c t c = +25 c t c = ?5 c 2 3 4 5 6 7 8 11 12 13 7 ?5 ?5 +25 +85 +125 8 6 5 4 3 2 p 1 db (dbm) nf (db) g p (db) temperature ( c) figure 4. output power at 1 db gain compression, nf and power gain vs. mounting surface temperature, f = 1.0 ghz, i d = 25 ma. nf g p p 1 db 0.1 ghz 0.5 ghz 1.0 ghz 2.0 ghz i d = 18 ma i d = 25 ma i d = 40 ma
35 micro-x package dimensions a02 13 4 2 ground dia. ground rf output and bias rf input .085 2.15 .083 2.11 .020 .508 .100 2.54 .455 .030 11.54 .75 .006 .002 .15 .05 notes: (unless otherwise specified) 1. dimensions are in 2. tolerances in .xxx = 0.005 mm .xx = 0.13 mm .022 .56 .057 .010 1.45 .25 www.semiconductor.agilent.com data subject to change. copyright ? 1999 agilent technologies 5965-9697e (11/99)
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