bat 68-07w oct-07-1999 1 silicon schottky diodes ? for mixer applications in the vhf / uhf range ? for high-speed switching applications vps05605 4 2 1 3 32 eha07008 1 4 esd : e lectro s tatic d ischarge sensitive device, observe handling precaution! type marking pin configuration package bat 68-07w 87 1 = c1 2 = c2 3 = a2 4 = a1 sot-343 maximum ratings parameter symbol value unit diode reverse voltage v r 8 v forward current i f 130 ma total power dissipation , t s = 89 c p tot 150 mw junction temperature t j 150 c operating temperature range c -65 ... 150 t op storage temperature t st g -65 ... 150 c maximum ratings junction - ambient 1) r thja 570 k/w junction - soldering point r thjs 410 1) package mounted on alumina 15mm x 17.6mm x 0.7mm
bat 68-07w oct-07-1999 2 electrical characteristics at t a = 25 c, unless otherwise specified. parameter values symbol unit max. min. typ. dc characteristics v (br) 8 breakdown voltage i (br) = 10 a - - v i r a - reverse current v r = 1 v 0.1 - reverse current v r = 1 v, t a = 60 c i r - - 1.2 forward voltage i f = 1 ma i f = 10 ma v f - 340 318 390 340 500 mv ac characteristics diode capacitance v r = 1 v, f = 1 mhz c t - - 1 pf differential forward resistance i f = 5 ma, f = 10 khz r f - - 10 ?
bat 68-07w oct-07-1999 3 forward current i f = f ( t a *; t s ) * package mounted on alumina 0 20 40 60 80 100 120 c 150 t a ,t s 0 10 20 30 40 50 60 70 80 90 100 110 120 ma 140 i f t s t a permissible pulse load r thjs = f ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 3 10 k/w r thjs 0.5 0.2 0.1 0.05 0.02 0.01 0.005 d = 0 permissible pulse load i fmax / i fdc = f ( t p ) 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 0 s t p 0 10 1 10 2 10 - i fmax / i fdc d = 0 0.005 0.01 0.02 0.05 0.1 0.2 0.5
bat 68-07w oct-07-1999 4 forward current i f = f ( v f ) t a = parameter 0.0 10 ehd07101 bat 68... f f v 10 10 10 10 -40 c a = ma -2 -1 0 1 2 c 25 c 85 c 150 0.1 0.2 0.3 0.4 0.5 v 0.6 t reverse current i r = f ( v r ) t a = parameter 0 10 ehd07102 bat 68... r r v 10 10 10 10 a 150 c t a = 12 3v 4 -3 -2 -1 0 2 1 10 c 85 c 25 differential forward resistance r f = f ( i f ) f = 10 khz 10 ehd07104 bat 68... r f -1 0 10 1 10 ma ? 10 2 f 0 10 1 10 2 10 3 10 diode capacitance c t = f ( v r ) f = 1mhz 0 0 ehd07103 bat 68... c t r v 234 0.5 pf 1.0 1v
bat 68-07w oct-07-1999 5 rectifier voltage v out = f ( v in ) f = 900 mhz r l = parameter in k ? 10 0 10 1 10 2 10 3 mv v i -2 10 -1 10 0 10 1 10 2 10 3 10 4 10 mv v o 1000 500 200 100 50 20 r l =10 testcircuit: d.u.t r in r l c l 1nf 50 ? v i v 0
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