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Datasheet File OCR Text: |
savantic semiconductor product specification silicon npn power transistors 2SC3038 description with to-220c package high breakdown voltage : v c bo =500v(min) wide area of safe operation fast switching speed applications 400v/4a switching regulator applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 4 a i cp collector current-pulse pw 3 300s,duty cycle 3 10% 8 a i b base current 1.5 a 1.75 p c collector power dissipation t c =25 40 w t j junction temperature 150 t stg storage temperature -55~150
savantic semiconductor product specification 2 silicon npn power transistors 2SC3038 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =5ma ; r be = a 400 v v (br)cbo collector-base breakdown voltage i c =1ma ; i e =0 500 v v (br)ebo emitter-base breakdown voltage i e =1ma ; i c =0 7 v v ce (sat) collector-emitter saturation voltage i c =2a; i b =0.4a 1.0 v v be (sat) base-emitter saturation voltage i c =2a; i b =0.4a 1.5 v i cbo collector cut-off current v cb =400v ;i e =0 10 a i ebo emitter cut-off current v eb =5v; i c =0 10 a h fe-1 dc current gain i c =0.4a ; v ce =5v 15 50 h fe-2 dc current gain i c =2a ; v ce =5v 8 f t transition frequency i c =0.4a ; v ce =10v 20 mhz c ob output capacitance f=1mhz ; v cb =10v 40 pf switching times t on turn-on time 1.0 s t stg storage time 2.5 s t f fall time v cc =200v; i c =3a i b1 =0.6a;i b2 =-0.6a; r l =66.6 f 1.0 s h fe-1 classifications l m n 15-30 20-40 30-50 savantic semiconductor product specification 3 silicon npn power transistors 2SC3038 package outline fig.2 outline dimensions (unindicated tolerance: 0.10 mm) |
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