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HM6207H series 256 k high speed sram (256-kword 1-bit) features single 5 v supply and high density 24-pin package high speed access time: 25/35/45 ns (max) low power ? operation: 300 mw (typ) ? standby: 100 w (typ) 30 w (typ) (l-version) completely static memory required, no clock or timing strobe required equal access and cycle time directly ttl compatible, all inputs and outputs battery backup operation capability (l-version) ordering information type no. access time package HM6207Hp-25 HM6207Hp-35 HM6207Hp-45 25 ns 35 ns 45 ns 300-mil 24-pin plastic dip (dp-24nc) HM6207Hlp-25 HM6207Hlp-35 HM6207Hlp-45 25 ns 35 ns 45 ns HM6207Hjp-25 HM6207Hjp-35 HM6207Hjp-45 25 ns 35 ns 45 ns 300-mil 24-pin soj (cp-24d) HM6207Hljp-25 HM6207Hljp-35 HM6207Hljp-45 25 ns 35 ns 45 ns
HM6207H series 2 pin arrangement a16 23 1 a17 2 a0 3 a1 4 a2 5 a3 6 a4 7 a5 8 a6 9 a7 10 dout 11 we v cc 24 a15 22 a14 21 a13 20 a12 19 a11 18 a10 17 a9 16 a8 15 din 14 (top view) 12 v ss cs 13 pin description pin name function a0 Cai7 address din data input dout data output &6 chip select :( write enable v cc power supply v ss ground
HM6207H series 3 block diagram a9 a12 a11 a10 a8 a7 a6 v cc v ss memory array 256 1024 row decoder column i/o column decoder a15 a16 a17 a0 a1 a2 a3 a4 a5 din cs we dout a14 a13 function table &6 :( mode v cc current i/o pin ref. cycle h not selected i sb , i sb1 high-z l h read l cc dout read cycle l l write i cc high-z write cycle note: = dont care. absolute maximum ratings parameter symbol value unit voltage on any pin relative to v ss vin C0.5 *1 to +7.0 v power dissipation p t 1.0 w operating temperature range topr 0 to +70 c storage temperature range tstg C55 to +125 c storage temperature range under bias tbias C10 to +85 c note: 1. vin min = C2.5 v for pulse width < 10 ns.
HM6207H series 4 recommended dc operating conditions (ta = 0 to +70 c) parameter symbol min typ max unit supply voltage v cc 4.5 5.0 5.5 v v ss 0 0 0 v input high (logic 1) voltage v ih 2.2 6.0 v input low (logic 0) voltage v il C0.5 *1 0.8 v note: 1. v il min = C2.0 v for pulse width 10 ns. dc characteristics (ta = 0 to +70 c, v cc = 5 v 10%, v ss = 0 v) HM6207H-25 HM6207H-35/45 parameter symbol min typ *1 max min typ *1 max unit test conditions input leakage current i li 2.0 2.0 a v cc = max, vin = v ss to v cc output leakage current i lo 10.0 10.0 a &6 = v ih , v i/o = v ss to v cc operating power supply current l cc 60 120 50 100 ma &6 = v il , i i/o = 0 ma, min cycle, duty = 100% i cc1 40 80 40 80 ma &6 = v il , l i/o = 0 ma, t cycle = 50 ns, duty = 100% standby power supply current i sb 20 40 15 30 ma &6 = v ih , min cycle standby power supply current (1) i sb1 0.02 2.0 0.02 2.0 ma &6 3 v cc C 0.2 v, 0 v vin < 0.2, or vin 3 v cc C 0.2 v l- version 0.006 0.1 0.006 0.1 output low voltage v ol 0.4 0.4 v i ol = 8 ma output high voltage v oh 2.4 2.4 v i oh = C4.0 ma note: 1. typical values are at v cc = 5.0 v, ta = +25 c and not guaranteed. capacitance (ta = 25 c, f = 1 mhz) *1 parameter symbol min max unit test conditions input capacitance cin 6 pf vin = 0 v output capacitance cout 10 pf vout = 0 v note: 1. this parameter is sampled and is not 100% tested.
HM6207H series 5 ac characteristics (ta = 0 to +70 c, v cc = 5 v 10% unless otherwise noted) test conditions input pulse levels: v ss to 3.0 v input and output timing reference levels: 1.5 v input rise and fall time: 5 ns output load: see figures output load (a) output load (b) (t hz , t lz , t wz, and t ow ) note: 1. including scope and jig + 5 v 480 w 30 pf *1 255 w dout + 5 v 480 w 5 pf *1 255 w dout read cycle HM6207H-25 HM6207H-35 HM6207H-45 parameter symbol min max min max min max unit read cycle time t rc 25 35 45 ns address access time t aa 25 35 45 ns chip select access time t acs 25 35 45 ns output hold from address change t oh 5 5 5 ns chip selection to output in low-z t lz *1 5 5 5 ns chip deselection to output in high-z t hz *1 0 15 0 20 0 20 ns note: 1. transition is measured 200 mv from steady-state voltage with load (b). these parameters are sampled and not 100% tested.
HM6207H series 6 read timing waveform (1) t rc t aa t oh t oh valid data address dout 1. 2. notes: we is high for read cycle. device is continuously selected, cs = v il . read timing waveform (2) t rc t acs t hz valid data high impedance cs dout high impedance 1. 2. notes: we is high for read cycle. address valid prior to coincident with cs transition low. t lz
HM6207H series 7 write cycle HM6207H-25 HM6207H-35 HM6207H-45 parameter symbol min max min max min max unit write cycle time t wc 25 35 45 ns chip selection to end of write t cw 20 30 40 ns address valid to end of write t aw 20 30 40 ns address setup time t as 0 0 0 ns write pulse width t wp 20 25 25 ns write recovery time t wr 3 3 3 ns data valid to end of write t dw 15 20 20 ns data hold time t dh 0 0 0 ns write enabled to output in high-z t wz *1 0 15 0 20 0 25 ns output active from end of write t ow *1 0 0 0 ns note: 1. transition is measured 200 mv from high-impedance voltage with load (b). this parameter is sampled and is not 100% tested. write timing waveform (1) ( :( controlled) t wc t cw t aw t as t wr t wp address cs we t dw t dh valid data high impedance t wz t ow din dout
HM6207H series 8 write timing waveform (2) ( &( controlled) t wc t as t cw t wp t dw t dh valid data din address cs we t aw t wr t wz dout high impedance data undefined notes: 1. 2. 3. 4. a write occurs during the overlap of a low cs and a low we. t wr is measured from the earlier of cs or we going high to the end of the write cycle. if the cs low transition occurs simultaneously with the we low transition, the output buffers remain in a high impedance state. dout has the same phase as write data in this write cycle, if t wr is long enough.
HM6207H series 9 low v cc data retention characteristics (ta = 0 to +70 c) these characteristics are guaranteed for the l-version only. parameter symbol min typ max unit test conditions v cc for data retention v dr 2.0 v &6 3 v cc C 0.2 v, vin 3 v cc C 0.2 v, or 0 v vin 0.2 v data retention current i ccdr 2 50 *1 a chip deselect to data retention time t cdr 0 ns operation recovery time t r 5 ms note: 1. v cc = 3.0 v low v cc data retention timing waveform data retention mode cs 3 v cc ?0.2 v t cdr v cc 4.5 v 2.2 v v dr 0 v cs t r
HM6207H series 10 package dimensions HM6207Hp/hlp series (dp-24nc) unit: mm 0.51 min 2.54 min 5.08 max 7.62 0.25 + 0.11 ?0.05 2.54 0.25 0.48 0.10 1.30 1 12 13 24 29.88 30.48 max 7.10 7.40 max 1.14 0 ?15 1.27 max HM6207Hjp/hljp series (cp-24d) unit: mm 15.63 16.00 max 0.74 6.76 7.62 0.13 8.64 0.13 24 13 1 12 0.43 0.10 3.50 0.26 + 0.21 ?0.24 2.40 + 0.35 ?0.16 1.30 max 0.10 0.80 +0.25 ?.17 1.27
HM6207H series 11 when using this document, keep the following in mind: 1. this document may, wholly or partially, be subject to change without notice. 2. all rights are reserved: no one is permitted to reproduce or duplicate, in any form, the whole or part of this document without hitachis permission. 3. hitachi will not be held responsible for any damage to the user that may result from accidents or any other reasons during operation of the users unit according to this document. 4. circuitry and other examples described herein are meant merely to indicate the characteristics and performance of hitachis semiconductor products. hitachi assumes no responsibility for any intellectual property claims or other problems that may result from applications based on the examples described herein. 5. no license is granted by implication or otherwise under any patents or other rights of any third party or hitachi, ltd. 6. medical applications: hitachis products are not authorized for use in medical applications without the written consent of the appropriate officer of hitachis sales company. such use includes, but is not limited to, use in life support systems. buyers of hitachis products are requested to notify the relevant hitachi sales offices when planning to use the products in medical applications. hitachi, ltd. semiconductor & ic div. nippon bldg., 2-6-2, ohte-machi, chiyoda-ku, tokyo 100, japan tel: tokyo (03) 3270-2111 fax: (03) 3270-5109 for further information write to: hitachi america, ltd. semiconductor & ic div. 2000 sierra point parkway brisbane, ca. 94005-1835 u s a tel: 415-589-8300 fax: 415-583-4207 hitachi europe gmbh electronic components group continental europe dornacher stra? 3 d-85622 feldkirchen m?nchen tel: 089-9 91 80-0 fax: 089-9 29 30 00 hitachi europe ltd. electronic components div. northern europe headquarters whitebrook park lower cookham road maidenhead berkshire sl6 8ya united kingdom tel: 0628-585000 fax: 0628-778322 hitachi asia pte. ltd. 16 collyer quay #20-00 hitachi tower singapore 0104 tel: 535-2100 fax: 535-1533 hitachi asia (hong kong) ltd. unit 706, north tower, world finance centre, harbour city, canton road tsim sha tsui, kowloon hong kong tel: 27359218 fax: 27306071

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