1 nec's npn sige high frequency transistor nesg3031m14 features ? the device is an ideal choice for low noise, high-gain amplification : nf = 0.95 db typ., g a = 10.0 db typ. @ v ce = 2 v, i c = 6 ma, f = 5.2 ghz nf = 1.1 db typ., g a = 9.5 db typ. @ v ce = 2 v, i c = 6 ma, f = 5.8 ghz ? maximum stable power gain : msg = 15.0 db typ. @ v ce = 3 v, i c = 20 ma, f = 5.8 ghz ? sige hbt technology (uhs3) adopted : f max = 110 ghz ? m14 package : 4-pin lead-less minimold package california eastern laboratories the information in this document is subject to change without notice. before using this document, please con? rm that this is the latest version. datasheet m14 package ordering information part number quantity supplying form nesg3031m14-a 50 pcs (non reel) ? 8 mm wide embossed taping ? pin 1 (collector), pin 4 (emitter) face the perforation side of the tape NESG3031M14-T3-A 10 kpcs/reel remark to order evaluation samples, contact your nearby sales of?ce. unit sample quantity is 50 pcs. absolute maximum ratings (t a = +25oc) parameter symbol ratings unit collector to base voltage v cbo 12.0 v collector to emitter voltage v ceo 4.3 v emitter to base voltage v ebo 1.5 v collector current i c 35 ma total power dissipation p tot note 150 mw junction temperature t j 150 c storage temperature t stg ? 65 to +150 c note mounted on 1.08 cm 2 1.0 mm (t) glass epoxy pwb caution observe precautions when handling because these devices are sensitive to electrostatic discharge.
2 nesg3031m14 electrical characteristics (t a = +25oc) parameter symbol test conditions min. typ. max. unit dc characteristics collector cut-off current i cbo v cb = 5 v, i e = 0 ma ? ? 100 na emitter cut-off current i ebo v eb = 1 v, i c = 0 ma ? ? 100 na dc current gain h fe note 1 v ce = 2 v, i c = 6 ma 220 300 380 ? rf characteristics insertion power gain | s 21e | 2 v ce = 3 v, i c = 20 ma, f = 5.8 ghz 6.5 9.0 ? db noise figure (1) nf v ce = 2 v, i c = 6 ma, f = 5.2 ghz, z s = z sopt , z l = z lopt ? 0.95 ? db noise figure (2) nf v ce = 2 v, i c = 6 ma, f = 5.8 ghz, z s = z sopt , z l = z lopt ? 1.1 1.5 db associated gain (1) g a v ce = 2 v, i c = 6 ma, f = 5.2 ghz, z s = z sopt , z l = z lopt ? 10.0 ? db associated gain (2) g a v ce = 2 v, i c = 6 ma, f = 5.8 ghz, z s = z sopt , z l = z lopt 7.5 9.5 ? db reverse transfer capacitance c re note 2 v cb = 2 v, i e = 0 ma, f = 1 mhz ? 0.15 0.25 pf maximum stable power gain msg note 3 v ce = 3 v, i c = 20 ma, f = 5.8 ghz 12.0 15.0 ? db gain 1 db compression output power p o (1 db) v ce = 3 v, i c (set) = 20 ma, f = 5.8 ghz, z s = z sopt , z l = z lopt ? 13.0 ? dbm 3rd order intermodulation distortion output intercept point oip 3 v ce = 3 v, i c (set) = 20 ma, f = 5.8 ghz, z s = z sopt , z l = z lopt ? 18.0 ? dbm notes 1. pulse measurement: pw 350 s, duty cycle 2% 2. collector to base capacitance when the emitter grounded 3. msg = s 21 s 12 h fe classification rank fb marking zj h fe value 220 to 380
3 nesg3031m14 typica l characteristics ( t a = 25oc, unless otherwise specified ) 0.3 0.2 0 2 4 6 8 1 0 f = 1 mhz 0.1 v ce = 1 v 10 1 0.1 0.001 0.0001 0.01 0.00001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 100 v ce = 2 v 10 1 0.1 0.001 0.0001 0.01 0.00001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 100 v ce = 3 v 10 1 0.1 0.001 0.0001 0.01 0.00001 0.7 0.5 0.6 0.4 0.8 0.9 1.0 100 20 40 30 10 0 2 1 3 5 i b = 20 a 40 a 60 a 80 a 100 a 120 a 140 a 160 a 180 a 200 a 4 to tal power dissipation p to t (mw) ambient t emperature t a (oc) total power dissipat io n vs. ambient tempera ture mounted on glass epoxy pwb (1.08 cm 2 1.0 mm (t)) reverse t ransfer capacitance c re (p f) collector to base v oltage v cb (v) reverse transfer cap acit ance vs. collect or to base volta ge collector current i c (ma) base to emitter v oltage v be (v) collect or current vs. base to emitter vo lta ge collector current i c (ma) base to emitter v oltage v be (v) collect or current vs. base to emitter vo lta ge collector current i c (ma) base to emitter v oltage v be (v) collect or current vs. base to emitter vo lta ge collector current i c (ma) collector to emitter v oltage v ce (v) collect or current vs. collect or to emitter volta ge 250 200 150 100 50 0 25 50 75 100 125 150 remark the graphs indicate nominal characteristics.
4 nesg3031m14 remark the graphs indicate nominal characteristics. 30 25 20 10 5 0 1 1 0 100 v ce = 1 v f = 2 ghz 15 30 20 15 10 5 0 1 1 0 100 v ce = 2 v f = 2 ghz 25 30 20 15 10 5 0 1 1 0 100 v ce = 3 v f = 2 ghz 25 dc current gain h fe collector current i c (ma) dc current gain vs. collect or current dc current gain h fe collector current i c (ma) dc current gain vs. collect or current dc current gain h fe collector current i c (ma) dc current gain vs. collect or current gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collect or current gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collect or current gain bandwidth product f t (ghz) collector current i c (ma) gain bandwidth product vs. collect or current 1,000 100 10 10 0.1 100 v ce = 1 v 1 1,000 100 10 10 0.1 100 v ce = 2 v 1 1,000 100 10 10 0.1 100 v ce = 3 v 1
5 nesg3031m14 30 25 20 15 10 5 0 1 100 mag msg |s 21e | 2 v ce = 1 v i c = 20 ma v ce = 2 v i c = 20 ma 30 25 20 15 10 5 0 1 1 0 100 mag msg |s 21e | 2 10 msg mag v ce = 3 v i c = 20 ma 30 25 20 15 10 5 0 1 1 0 100 mag msg |s 21e | 2 msg mag v ce = 1 v f = 2.4 ghz 30 25 15 10 0 1 1 0 100 |s 21e | 2 20 5 mag msg v ce = 2 v f = 2.4 ghz 30 25 15 10 0 1 1 0 100 |s 21e | 2 20 5 mag msg v ce = 3 v f = 2.4 ghz 30 25 15 10 0 1 1 0 100 |s 21e | 2 20 5 mag msg frequency f (ghz) inser tion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum a vailable power gain mag (db) maximum stable power gain msg (db) frequency f (ghz) inser tion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum a vailable power gain mag (db) maximum stable power gain msg (db) frequency f (ghz) inser tion power gain, mag, msg vs. frequency insertion power gain |s 21e | 2 (db) maximum a vailable power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) inser tion power gain, mag, msg vs. collect or current insertion power gain |s 21e | 2 (db) maximum a vailable power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) inser tion power gain, mag, ms g vs. collect or current insertion power gain |s 21e | 2 (db) maximum a vailable power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) inser tion power gain, mag, ms g vs. collect or current insertion power gain |s 21e | 2 (db) maximum a vailable power gain mag (db) maximum stable power gain msg (db) remark the graphs indicate nominal characteristics.
6 remark the graphs indicate nominal characteristics. nesg3031m14 v ce = 1 v f = 5.8 ghz 25 20 10 5 -5 1 1 0 100 |s 21e | 2 15 0 v ce = 2 v f = 5.8 ghz 25 20 10 5 -5 1 1 0 100 |s 21e | 2 15 0 v ce = 3 v f = 5.8 ghz 25 20 10 5 -5 1 1 0 100 |s 21e | 2 15 0 mag msg mag msg mag msg v ce = 3 v f = 5.2 ghz 25 20 10 5 -5 1 1 0 100 |s 21e | 2 15 0 mag msg v ce = 2 v f = 5.2 ghz 25 20 10 5 -5 1 1 0 100 |s 21e | 2 15 0 mag msg v ce = 1 v f = 5.2 ghz 25 20 10 5 -5 1 1 0 100 |s 21e | 2 15 0 mag msg collector current i c (ma) inser tion power gain, mag, msg vs. collect or current insertion power gain |s 21e | 2 (db) maximum a vailable power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) inser tion power gain, mag, msg vs. collect or current insertion power gain |s 21e | 2 (db) maximum a vailable power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) inser tion power gain, mag, ms g vs. collect or current insertion power gain |s 21e | 2 (db) maximum a vailable power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) inser tion power gain, mag, ms g vs. collect or current insertion power gain |s 21e | 2 (db) maximum a vailable power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) inser tion power gain, mag, ms g vs. collect or current insertion power gain |s 21e | 2 (db) maximum a vailable power gain mag (db) maximum stable power gain msg (db) collector current i c (ma) inser tion power gain, mag, ms g vs. collect or current insertion power gain |s 21e | 2 (db) maximum a vailable power gain mag (db) maximum stable power gain msg (db)
7 nesg3031m14 v ce = 3 v, f = 2.4 ghz i c (set) = 20 ma p out i c 20 15 10 5 0 -5 50 10 20 40 30 0 -20 -10 -15 -5 0 5 5 4 3 2 1 0 20 8 4 16 12 0 1 1 0 100 v ce = 2 v f = 2.4 ghz g a nf v ce = 3 v, f = 5.8 ghz i c (set) = 20 ma p out i c 20 15 10 5 0 -5 50 10 20 30 40 0 -15 -5 -10 0 5 10 5 4 3 2 1 0 15 6 3 12 9 0 1 1 0 100 v ce = 2 v f = 5.8 ghz g a nf input power p in (dbm) output power, collect or current vs. input power output power p out (dbm) collector current i c (ma) input power p in (dbm) output power, collect or current vs. input power output power p out (dbm) collector current i c (ma) collector current i c (ma) noise figure, associa ted gain vs. collect or current noise figure nf (db) associated gain g a (db) collector current i c (ma) noise figure, associa ted gain vs. collect or current noise figure nf (db) associated gain g a (db) remark the graphs indicate nominal characteristics.
8 life support applications these nec products are not intended for use in life support devices, appliances, or systems where the malfunction of these prod ucts can reasonably be expected to result in personal injury . the customers of cel using or selling these products for use in such applications do so at their own risk and agree to fully indemnify cel for all damages resulting from such improper use or sale. a business partner of nec compound semiconductor devices, ltd. 01/31/2005 nesg3031m14 pin connections 1. collector 2. emitter 3. base 4. emitter zj 0.50.05 0.1 1 +0.1 -0.0 5 1.2 +0.07 -0.0 5 0.8 0.8 +0.07 -0.0 5 1.00.05 0.150.05 4 3 1 2 package dimensions (unit : mm) 4-pin lead-less minimold (m14, 1208 package)
9 4590 patrick henry drive santa clara, ca 95054-1817 telephone: (408 ) 9 19-250 0 facsimile : ( 40 8 ) 988-0279 subject: compliance with eu directives cel certifies, to its knowledge, that semiconductor and laser products detailed below are compliant with the requirements of european union (eu) directive 2002/95/ec restriction on use of hazardous substance s i n electrical and electronic equipment (rohs) and the requirements of eu directive 2003/11/ec restriction on penta and octa bde. cel pb-free products have the same base part number with a suffix added. the suffix Ca indicates that the device is pb-free. the Caz suffix is used to designate devices containing pb which are exempted from the requirement of rohs directive (*). in all cases the devices have pb-free terminals. all devices with these suffixes meet the requirements of the rohs directive. this status is based on cels understanding of the eu directives and knowledge of the materials that go into its products as of the date of disclosure of this information . restricted substanc e per rohs concentration limit per rohs (values are not yet fixed) concentration contained in cel devices -a -a z lead (p b) < 1000 ppm not detected (*) mercury < 1000 ppm not detected cadmiu m < 100 ppm not detected hexavalent chromiu m < 1000 ppm not detected pbb < 1000 ppm not detected pbde < 1000 ppm not detected if you should have any additional questions regarding our devices and compliance to environmental standards, please do not hesitate to contact your local representative. important information and disclaimer: informatio n p rovided by ce l o n its website or in other communications concertin g the substan ce content of its products represents knowledge and belief as of the date that it is provided. cel bases its know ledge and belief on informatio n provided by thir d p arties and makes no representation or warrant y as to the accura cy of such information. efforts are underw ay to better integrate information from third parties. cel has taken and continues to take reasonable steps to provide representative and ac curate information but ma y not have conducted destructive testing or chemical analysis on incoming ma terials and chemicals. cel and ce l suppliers consider certain information to be propri etar y, and thus cas numbers and other limited information may not be availabl e for release . in no event shall cels liability arising out of such information exceed the total purchase price of the cel part(s) at issue s old by cel to customer on an annual basis. see cel terms and conditions for additional clarification of wa rranties and liabilit y.
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