1 - 2 ? 2000 ixys all rights reserved symbol test conditions maximum ratings v dss t j = 25 c to 150 c 550 v v dgr t j = 25 c to 150 c; r gs = 1 m 550 v v gs continuous 20 v v gsm transient 30 v i d25 t c = 25 c48a i dm t c = 25 c, pulse width limited by t jm 192 a i ar t c = 25 c44a e ar t c = 25 c60mj e as t c = 25 c3j dv/dt i s i dm , di/dt 100 a/ s, v dd v dss 5 v/ns t j 150 c, r g = 2 p d t c = 25 c 560 w t j -55 ... +150 c t jm 150 c t stg -55 ... +150 c t l 1.6 mm (0.063 in.) from case for 10 s 300 c m d mounting torque to-264 0.9/6 nm/lb.in. weight plus 247 6 g to-264 10 g symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. v dss v gs = 0 v, i d = 3ma 550 v v gs(th) v ds = v gs , i d = 8ma 2.5 4.5 v i gss v gs = 20 v, v ds = 0 200 na i dss v ds = v dss 100 a v gs = 0 v t j = 125 c2 ma r ds(on) v gs = 10 v, i d = 0.5 ? i d25 110 m note 1 features international standard packages low r ds (on) hdmos tm process rugged polysilicon gate cell structure unclamped inductive switching (uis) rated low package inductance - easy to drive and to protect fast intrinsic rectifier applications dc-dc converters battery chargers switched-mode and resonant-mode power supplies dc choppers ac motor control temperature and lighting controls advantages plus 247 tm package for clip or spring mounting space savings high power density hiperfet tm power mosfets single mosfet die avalanche rated 98712 (3/24/00) plus 247 tm (ixfk) g d (tab) g = gate d = drain s = source tab = drain v dss = 550 v i d25 = 48 a r ds(on) = 110 m t rr 250 ns s g d (tab) to-264 aa (ixfk) preliminary data ixfk 48n55 ixfx 48n55 ixys reserves the right to change limits, test conditions, and dimensions.
2 - 2 ? 2000 ixys all rights reserved symbol test conditions characteristic values (t j = 25 c, unless otherwise specified) min. typ. max. g fs v ds = 10 v; i d = 0.5 i d25 note 1 30 40 s c iss 8900 pf c oss v gs = 0 v, v ds = 25 v, f = 1 mhz 1000 pf c rss 330 pf t d(on) 42 ns t r v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 55 ns t d(off) r g = 1 (external), 110 ns t f 45 ns q g(on) 330 nc q gs v gs = 10 v, v ds = 0.5 v dss , i d = 0.5 i d25 60 nc q gd 65 nc r thjc 0.22 k/w r thck 0.15 k/w source-drain diode characteristic values (t j = 25 c, unless otherwise specified) symbol test conditions min. typ. max. i s v gs = 0 v 48 a i sm repetitive; 192 a pulse width limited by t jm v sd i f = i s , v gs = 0 v, note 1 1.3 v t rr 250 ns q rm 1.4 c i rm 8a i f = i s , -di/dt = 100 a/ s, v r = 100 v note: 1. pulse test, t 300 s, duty cycle d 2 % ixfk 48n55 ixfx 48n55 dim. millimeter inches min. max. min. max. a 4.83 5.21 .190 .205 a 1 2.29 2.54 .090 .100 a 2 1.91 2.16 .075 .085 b 1.14 1.40 .045 .055 b 1 1.91 2.13 .075 .084 b 2 2.92 3.12 .115 .123 c 0.61 0.80 .024 .031 d 20.80 21.34 .819 .840 e 15.75 16.13 .620 .635 e 5.45 bsc .215 bsc l 19.81 20.32 .780 .800 l1 3.81 4.32 .150 .170 q 5.59 6.20 .220 .244 r 4.32 4.83 .170 .190 plus247 tm (ixfx) outline millimeter inches min. max. min. max. a 4.82 5.13 .190 .202 a1 2.54 2.89 .100 .114 a2 2.00 2.10 .079 .083 b 1.12 1.42 .044 .056 b1 2.39 2.69 .094 .106 b2 2.90 3.09 .114 .122 c 0.53 0.83 .021 .033 d 25.91 26.16 1.020 1.030 e 19.81 19.96 .780 .786 e 5.46 bsc .215 bsc j 0.00 0.25 .000 .010 k 0.00 0.25 .000 .010 l 20.32 20.83 .800 .820 l1 2.29 2.59 .090 .102 p 3.17 3.66 .125 .144 q 6.07 6.27 .239 .247 q1 8.38 8.69 .330 .342 r 3.81 4.32 .150 .170 r1 1.78 2.29 .070 .090 s 6.04 6.30 .238 .248 t 1.57 1.83 .062 .072 dim. to-264 aa outline ixys mosfets and igbts are covered by one or more of the following u.s. patents: 4,835,592 4,881,106 5,017,508 5,049,961 5,187,117 5,486,715 4,850,072 4,931,844 5,034,796 5,063,307 5,237,481 5,381,025
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