p 600a ? p 600m 1 of 2 ? 200 0 w on- t op e l e c t ron i cs p600a ? p600m 6.0a silicon rectifier features ! diffused junction ! low forward voltage drop ! high current capability a b a ! high reliability ! high surge current capability mechanical data c ! case: molded plastic d ! terminals: plated leads solderable per mil-std-202, method 208 ! polarity: cathode band ! weight: 2.1 grams (approx.) ! mounting position: any ! marking: type number ! epoxy: ul 94v-o rate flame retardant maximum ratings and electrical characteristics @t a =25c unless otherwise specified single phase, half wave, 60hz, resistive or inductive load. for capacitive load, derate current by 20%. characteristic symbol p600a p600b p600d p600g p600j p600k p600m unit peak repetitive reverse voltage working peak reverse voltage dc blocking voltage v rrm v rwm v r 50 100 200 400 600 800 1000 v rms reverse voltage v r(rms) 35 70 140 280 420 560 700 v average rectified output current (note 1) @t a = 60c i o 6.0 a non-repetitive peak forward surge current 8.3ms single half sine-wave superimposed on rated load (jedec method) i fsm 400 a forward voltage @i f = 6.0a v fm 1.0 v peak reverse current @t a = 25c at rated dc blocking voltage @t a = 100c i rm 5.0 1.0 a ma typical junction capacitance (note 2) c j 150 pf typical thermal resistance junction to ambient (note 1) r ja 20 k/w operating temperature range t j -50 to +150 c storage temperature range t stg -50 to +150 c *glass passivated forms are available upon request note: 1. leads maintained at ambient temperature at a distance of 9.5mm from the case 2. measured at 1.0 mhz and applied reverse voltage of 4.0v d.c. wte power semiconductors p-600 dim min max a 25.4 ? b 8.60 9.10 c 1.20 1.30 d 8.60 9.10 all dimensions in mm
p 6 00 a ? p 60 0 m 2 of 2 ? 200 0 w on- t op e l e c t ron i cs 1 2 3 4 5 i , ave r a g e r e c t i f ie d c ur r e n t ( a ) o t , a m bient tem perature (o c) fi g . 1 forw ard current deratin g cur v e a 6 7 8 25 0 50 75 100 125 150 175 200 0 0.1 1.0 100 0.6 1.0 1.4 1.8 i , i n st a n t a n e ous f or wa r d c u r r e n t ( a ) f v , instantaneous forward voltage (v) fi g . 2, typical forward characteristics f 10 0.2 0 pulse width = 300 s 2% duty cycle m t = 25oc j 10 100 1000 1 10 100 c, c a p a c i t a n c e ( p f ) j v , reverse volta ge (v) fig. 4 typical junction capacitance r t = 25c f = 1mhz j 0 100 200 300 400 500 1 10 100 i , p e a k f o r w a r d sur g e c u r r e n t (a ) fs m number of cycles at 60hz fi g . 3 maximum non-repetitive peak forward sur g e current 8.3ms single half sine-wave jedec method
|
