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inchange semiconductor product specification silicon npn power transistors 2sc3210 description ? ? with to-3pfa package ? low collector saturation voltage ? high breakdown voltage applications ? for high speed switching applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ?? ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 500 v v ceo collector-emitter voltage open base 400 v v ebo emitter-base voltage open collector 7 v i c collector current 10 a i cm collector current-peak 20 a i b base current 5 a t c =25 ?? 100 p c collector power dissipation t a =25 ?? 3 w t j junction temperature 150 ?? t stg storage temperature -55~150 ?? ?? inchange semiconductor
inchange semiconductor product specification 2 silicon npn power transistors 2sc3210 characteristics tj=25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =0.2a;l=25mh 400 v v cesat collector-emitter saturation voltage i c =5a ;i b =1a 1.0 v v besat base-emitter saturation voltage i c =5a ;i b =1a 1.5 v i cbo collector cut-off current v cb =500v; i e =0 100 | a i ebo emitter cut-off current v eb =5v; i c =0 100 | a h fe-1 dc current gain i c =0.1a ; v ce =5v 15 h fe-2 dc current gain i c =5a ; v ce =5v 8 f t transition frequency i c =0.5a ; v ce =10v 11 mhz switching times t on turn-on time 1.0 | s t stg storage time 2.5 | s t f fall time i c =5a; v cc =100v i b1 =-i b2 =1a 1.0 | s ?? inchange semiconductor
inchange semiconductor product specification 3 silicon npn power transistors 2sc3210 package outline fig.2 outline dimensions (unindicated tolerance: ? 0.30mm) ?? inchange semiconductor

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