5? sfh610a/611a/615a/617a 5.3 kv trios optocoupler high reliability features high current transfer ratios at 10 ma: 40?20% at 1 ma: 60% typical (>13) low ctr degradation good ctr linearity depending on forward current withstand test voltage, 5300 vacrms high collector-emitter voltage, vceo=70 v low saturation voltage fast switching times field-effect stable by trios (transparent ion shield) temperature stable low coupling capacitance end-stackable, .100"(2.54 mm) spacing high common-mode interference immunity (uncon- nected base) underwriters lab file #52744 vde 0884 available with option 1 smd option ?see sfh6106/16/56 data sheet description the sfh61xa features a high current transfer ratio, low coupling capacitance and high isolation voltage. these couplers have a gaas infrared emitting diode emitter, which is optically coupled to a silicon planar phototransis- tor detector, and is incorporated in a plastic dip-4 package. the coupling devices are designed for signal transmission between two electrically separated circuits. the couplers are end-stackable with 2.54 mm spacing. creepage and clearance distances of >8 mm are achieved with option 6. this version complies with iec 950 (din vde 0805) for reinforced insulation up to an operation voltage of 400 v rms or dc. speci?ations subject to change. maximum ratings emitter reverse voltage ............................................................................6 v dc forward current ................................................................ 60 ma surge forward current (tp 10 m s) ............................................ 2.5 a total power dissipation .........................................................100 mw detector collector-emitter voltage.............................................................70 v emitter-collector voltage...............................................................7 v collector current ......................................................................50 ma collector current (tp 1 ms)....................................................100 ma total power dissipation .........................................................150 mw package isolation test voltage between emitter and detector, refer to climate din 40046, part 2, nov. 74 ......................................................... 5300 vac rms creepage ................................................................................ 3 7 mm clearance................................................................................ 3 7 mm insulation thickness between emitter and detector............ 3 0.4 mm comparative tracking index per din iec 112/vde0 303, part 1......................................... 3 175 isolation resistance v io =500 v, t a =25 c .......................................................... 3 10 12 w v io =500 v, t a =100 c ........................................................ 3 10 11 w storage temperature range .......................................?5 to +150 c ambient temperature range ......................................?5 to +100 c junction temperature...............................................................100 c soldering temperature (max. 10 s. dip soldering distance to seating plane 3 1.5 mm) ....................................260 c package dimensions in inches (mm) .268 (6.81) .255 (6.48) 1 2 4 3 .190 (4.83) .179 (4.55) pin one i.d. .045 (1.14) .030 (.76) 4 typ. 1.00 (2.54) typ. .150 (3.81) .130 (3.30) .040 (1.02) .030 (.76 ) 10 typ. 3 ? .305 (7.75) .022 (.56) .018 (.46) .012 (.30) .008 (.20) .135 (3.43) .115 (2.92) 1 2 4 3 emitter collector anode cathode sfh610a 1 2 4 3 collector emitter cathode anode sfh611a 1 2 4 3 collector emitter anode cathode sfh615a/617a
5? sfh610/11/15/17a characteristics (t a =25 c) current transfer ratio (i c /i f at v ce =5 v) and collector-emitter leakage current by dash number description symbol unit condition emitter (ir gaas) forward voltage v f 1.25 ( 1.65) v i f =60 ma reverse current i r 0.01 ( 10) m av r =6 v capacitance c 0 13 pf v r =0 v, f=1 mhz thermal resistance r thja 750 k/w detector (si phototransistor) capacitance c ce 5.2 pf v ce =5 v, f=1 mhz thermal resistance r thja 500 k/w package collector-emitter saturation voltage v cesat 0.25 ( 0.4) v i f =10 ma, i c =2.5 ma coupling capacitance c c 0.4 pf description -1 -2 -3 -4 i c / i f (i f =10 ma) 40?0 63?25 100?00 160?20 % i c / i f (i f =1 ma) 30 (>13) 45 (>22) 70 (>34) 90 (>56) % collector-emitter leakage current, i ceo v ce =10 v 2 ( 50) 2 ( 50) 5 ( 100) 5 ( 100) na i f =10 ma, v cc =5 v, t a =25 c load resistance r l 75 w turn-on time t on 3.0 m s rise time t r 2.0 m s turn-off time t off 2.3 m s fall time t f 2.0 m s cut-off frequency f co 250 khz -1 i f =20 ma -2 and -3 i f =10 ma -4 i f =5 ma turn-on time t on 3.0 4.2 6.0 m s rise time t r 2.0 3.0 4.6 m s turn-off time t off 18 23 25 m s fall time t f 11 14 15 m s switching times (typical) linear operation (without saturation) switching operation (with saturation) r l =75 w v cc =5 v i c 47 w i f i f 1 k w v cc =5 v 47 w
5? sfh610/11/15/17a figure 1. current transfer ratio (typ.) vs. temperature i f =10 ma, v ce =0.5 v figure 2. output characteristics (typ.) collector current vs. collector-emitter voltage t a =25 c figure 3. diode forward voltage (typ.) vs. forward current figure 7. permissable diode for- ward current vs. ambient temp. figure 4. transistor capacitance (typ.) vs. collector-emitter voltage t a =25 c, f=1 mhz figure 5. permissible pulse handling capability. forward current vs. pulse width pulse cycle d=parameter, t a =25 c figure 6. permissible power dissipation vs. ambient temperature 20 15 10 0 5 pf c 10 -2 10 -1 10 -0 10 1 10 2 v v e c ce
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