d a t a sh eet product speci?cation supersedes data of september 1994 file under discrete semiconductors, sc04 1997 mar 10 discrete semiconductors bc327; BC327A; bc328 pnp general purpose transistors b ook, halfpage m3d186
1997 mar 10 2 philips semiconductors product speci?cation pnp general purpose transistors bc327; BC327A; bc328 features high current (max. 500 ma) low voltage (max. 60 v). applications general purpose switching and amplification, e.g. driver and output stages of audio amplifiers. description pnp transistor in a to-92; sot54 plastic package. npn complements: bc337, bc337a and bc338. pinning pin description 1 emitter 2 base 3 collector fig.1 simplified outline (to-92; sot54) and symbol. handbook, halfpage 1 3 2 mam281 3 2 1 quick reference data symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter bc327 -- 50 v BC327A -- 60 v bc328 -- 30 v v ceo collector-emitter voltage open base bc327 -- 45 v BC327A -- 60 v bc328 -- 25 v i cm peak collector current -- 1a p tot total power dissipation t amb 25 c - 625 mw h fe dc current gain i c = - 100 ma; v ce = - 1v bc327; bc328 100 600 BC327A 100 400 f t transition frequency i c = - 10 ma; v ce = - 5 v; f = 100 mhz 80 - mhz
1997 mar 10 3 philips semiconductors product speci?cation pnp general purpose transistors bc327; BC327A; bc328 limiting values in accordance with the absolute maximum rating system (iec 134). note 1. transistor mounted on an fr4 printed-circuit board. thermal characteristics note 1. transistor mounted on an fr4 printed-circuit board. symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter bc327 -- 50 v BC327A -- 60 v bc328 -- 30 v v ceo collector-emitter voltage open base bc327 -- 45 v BC327A -- 60 v bc328 -- 25 v v ebo emitter-base voltage open collector -- 5v i c collector current (dc) -- 500 ma i cm peak collector current -- 1a i bm peak base current -- 200 ma p tot total power dissipation t amb 25 c; note 1 - 625 mw t stg storage temperature - 65 +150 c t j junction temperature - 150 c t amb operating ambient temperature - 65 +150 c symbol parameter conditions value unit r th j-a thermal resistance from junction to ambient note 1 0.2 k/mw
1997 mar 10 4 philips semiconductors product speci?cation pnp general purpose transistors bc327; BC327A; bc328 characteristics t j =25 c unless otherwise speci?ed. note 1. v be decreases by about - 2 mv/k with increasing temperature. symbol parameter conditions min. typ. max. unit i cbo collector cut-off current i e = 0; v cb = - 20 v --- 100 na i e = 0; v cb = - 20 v; t j = 150 c --- 5 m a i ebo emitter cut-off current i c = 0; v eb = - 5v --- 100 na h fe dc current gain i c = - 100 ma; v ce = - 1v; see figs 2, 3 and 4 bc327; bc328 100 - 600 BC327A 100 - 400 bc327-16; bc328-16 100 - 250 bc327-25; bc328-25 160 - 400 bc327-40; bc328-40 250 - 600 h fe dc current gain i c = - 500 ma; v ce = - 1v; see figs 2, 3 and 4 40 -- v cesat collector-emitter saturation voltage i c = - 500 ma; i b = - 50 ma --- 700 mv v be base-emitter voltage i c = - 500 ma; v ce = - 1 v; note 1 --- 1.2 v c c collector capacitance i e =i e = 0; v cb = - 10 v; f = 1 mhz - 10 - pf f t transition frequency i c = - 10 ma; v ce = - 5 v; f = 100 mhz 80 -- mhz fig.2 dc current gain; typical values. bc327-16; bc328-16. handbook, full pagewidth 0 250 50 100 150 200 mbh717 10 - 1 1 h fe 10 i c (ma) 10 2 10 3 v ce = 5 v
1997 mar 10 5 philips semiconductors product speci?cation pnp general purpose transistors bc327; BC327A; bc328 fig.3 dc current gain; typical values. bc337-25; bc3378-25. handbook, full pagewidth 0 500 100 200 300 400 mbh718 10 - 1 1 h fe 10 i c (ma) 10 2 10 3 v ce = 5 v fig.4 dc current gain; typical values. bc327-40; bc328-40. handbook, full pagewidth 0 500 100 200 300 400 mbh719 10 - 1 1 h fe 10 i c (ma) 10 2 10 3 v ce = 5 v
1997 mar 10 6 philips semiconductors product speci?cation pnp general purpose transistors bc327; BC327A; bc328 package outline unit a references outline version european projection issue date iec jedec eiaj mm 5.2 5.0 b 0.48 0.40 c 0.45 0.40 d 4.8 4.4 d 1.7 1.4 e 4.2 3.6 l 14.5 12.7 e 2.54 e 1 1.27 l 1 (1) 2.5 b 1 0.66 0.56 dimensions (mm are the original dimensions) note 1. terminal dimensions within this zone are uncontrolled to allow for flow of plastic and terminal irregularities. sot54 to-92 sc-43 97-02-28 a l 0 2.5 5 mm scale b c d b 1 l 1 d e plastic single-ended leaded (through hole) package; 3 leads sot54 e 1 e 1 2 3
1997 mar 10 7 philips semiconductors product speci?cation pnp general purpose transistors bc327; BC327A; bc328 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
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