a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue ? north hollywood, ca 91605 ? (818) 982-1200 ? fax (818) 765-3004 1/1 s p ecifications are sub j ect to chan g e without notice. characteristics t c = 25c symbol none test conditions minimum typical maximum units v (br)dss v gs = 0 v i ds = 5.0 ma 60 --- --- v i dss v ds = 28 v v gs = 0 v --- --- 2.0 ma i gss v ds = 0 v v gs = 40 v --- --- 1.0 a v gs v ds = 10 v i d = 25 ma 1.0 --- 6.0 v g fs v ds = 10 v i d = 250 ma 250 --- --- ms c iss c oss c rss v gs = 28 v v ds = 0 v f = 1.0 mhz 22 17 3.0 pf p g d v dd = 28 v i dq = 25 ma p out = 30 w f = 175 mhz 13 50 14 60 db % vhf power mosfet n-channel enhancement mode VFT30-28 description: the VFT30-28 is designed for general purpose class ab power amplifier applications up to 175 mhz. features: ? p g = 14 db typ. at 30 w /175mhz ? 10:1 load vswr capability ? omnigold ? metalization system maximum ratings i d 2.5 a v (br)dss 65 v v dgr 65 v v gs 40 v p diss 97 w @ t c = 25 c t j -65 c to +200 c t stg -65 c to +150 c jc 1.8 c/w package style .380 4l flg order code: asi10703 minimum inches / mm .970 / 24.64 b c d e f g a maximum .385 / 9.78 .980 / 24.89 inches / mm h .160 / 4.06 .180 / 4.57 dim .220 / 5.59 .230 / 5.84 .105 / 2.67 .085 / 2.16 i j .240 / 6.10 .255 / 6.48 .785 / 19.94 f b g .125 ?.125 nom. full r d e c h .112 x 45 a i j .004 / 0.10 .006 / 0.15 .280 / 7.11 .720 / 18.29 .730 / 18.54 s g s d
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