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savantic semiconductor product specification silicon npn power transistors 2SC5669 description with to-3pn package complement to type 2sa2031 wide area of safe operation large current capacitance applications for audio frequency output applications pinning pin description 1 base 2 collector 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 250 v v ceo collector-emitter voltage open base 230 v v ebo emitter-base voltage open collector 6 v i c collector current 15 a i cm collector current-peak 30 a t a =25 2.5 p c collectorl power dissipation t c =25 140 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC5669 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c =50ma; r be = ; 230 v v (br)cbo collector-base breakdown voltage i c =5ma; i e =0 250 v v (brebo emitter-base breakdown voltage i e =5ma; i c =0 6 v v cesat collector-emitter saturation voltage i c =7.5 a;i b =0.75a 0.2 2.0 v v be base-emitter saturation voltage i c =7.5a ; v ce =5v 1.5 v i cbo collector cut-off current v cb =250v; i e =0 100 a i ebo emitter cut-off current v eb =4v; i c =0 100 a h fe-1 dc current gain i c =1a ; v ce =5v 60 160 h fe-2 dc current gain i c =7.5a ; v ce =5v 35 c ob output capacitance i e =0 ; v cb =10v,f=1mhz 200 pf f t transition frequency i c =1a ; v ce =5v 15 mhz switching times t on turn-on time 0.56 s t stg storage time 3.3 s t f fall time i c =7.5a;r l =6.67 b i b1 =-i b2 =0.75a v cc =50v 0.4 s savantic semiconductor product specification 3 silicon npn power transistors 2SC5669 package outline fig.2 outline dimensions savantic semiconductor product specification 4 silicon npn power transistors 2SC5669 |
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