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  bts 441 t infineon technologies ag page 1 of 12 2001-june-27 smart highside power switch one channel: 20m ? ? ? ? product summary package general description ? n channel vertical power fet with charge pump, ground referenced cmos compatible input, monolithically integrated in smart sipmos technology. ? fully protected by embedded protection functions. application ? c compatible power switch for 5v, 12 v and 24 v dc applications ? all types of resistive, inductive and capacitve loads ? most suitable for loads with high inrush currents, so as lamps ? replaces electromechanical relays, fuses and discrete circuits basic funktions ? very low standby current ? optimized static e lectro m agnetic c ompatibility ( emc ) ? c and cmos compatible ? fast demagnetization of inductive loads ? stable behaviour at undervoltage protection functions ? short circuit protection ? current limitation ? overload protection ? thermal shutdown ? overvoltage protection (including load dump) with external gnd-resistor ? reverse battery protection with external gnd-resistor ? loss of ground and loss of v bb protection ? e lectro s tatic d ischarge ( esd ) protection on-state resistance r on 20m ? operating voltage v bb(on) 4.75 ... 41v nominal load current i l(iso) 21a current limitation i l(lim) 65a to-220-5-11 to-263-5-2 to-220-5-12 standard smd straight vbb logic with protection functions in gnd load profet out
bts 441 t infineon technologies ag page 2 of 12 2001-june-27 functional diagram pin definitions and functions pin symbol function 1 gnd logic ground 2in input , activates the power switch in case of logical high signal 3v bb positive power supply voltage the tab is shorted to pin 3 4n.c. not connected 5out output to the load tab v bb positive power supply voltage the tab is shorted to pin 3 pin configuration (top view) tab = v bb 1 2 (3) 4 5 gnd in nc out out gnd overvoltage p rotection logic internal voltage supply esd temperature sensor clamp for inductive load gate control + charge pump current limit vbb load in profet
bts 441 t infineon technologies ag page 3 2001-june-27 maximum ratings at t j = 25 c unless otherwise specified parameter symbol values unit supply voltage (overvoltage protection see page 5) v bb 43 v supply voltage for full short circuit protection t j start =-40 ...+150c v bb 34 v load dump protection 1) v loaddump = v a + v s , v a = 13.5 v r i 2) = 2 ? , r l = 0,5 ? , t d = 200 ms, in= low or high v load dump 3) 60 v load current (short-circuit current, see page 5) i l self-limited a operating temperature range storage temperature range t j t stg -40 ...+150 -55 ...+150 c power dissipation (dc) ; tc 25c p tot 125 w maximal switchable inductance, single pulse v bb = 12v, t j,start = 150c, t c = 150c const. (see diagram, p.8) i l(iso) = 21 a, rl= 0 ? : e 4 ) as =0.7j: z l 2.1 mh electrostatic discharge capability (esd) in: (human body model) out to all other pins shorted: acc. mil-std883d, method 3015.7 and esd assn. std. s5.1-1993; r=1.5k ? ; c=100pf v esd 1.0 8.0 kv input voltage (dc) v in -10 ... +16 v current through input pin (dc) see internal circuit diagrams page 7 i in 2.0 ma thermal resistance chip - case: junction - ambient (free air): r thjc r thja 1 75 k/w smd version, device on pcb 5) : 33 1) supply voltages higher than v bb(az) require an external current limit for the gnd pin, e.g. with a 150 ? resistor in the gnd connection. a resistor for the protection of the input is integrated. 2) r i = internal resistance of the load dump test pulse generator 3) v load dump is setup without the dut connected to the generator per iso 7637-1 and din 40839 4) e as is the maximum inductive switch off energy 5) device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for v bb connection. pcb is vertical without blown air.
bts 441 t infineon technologies ag page 4 2001-june-27 electrical characteristics parameter and conditions symbol values unit at t j =-40...+150c, v bb = 12 v unless otherwise specified min typ max load switching capabilities and characteristics on-state resistance (v bb (pin3) to out (pin5) ); i l = 2 a v bb 7v : t j =25 c: t j =150 c: see diagram page 9 r on -- 15 28 20 37 m ? nominal load current (pin 3 to 5) ?iso 10483-1, 6.7: v on =0.5v, t c =85c i l(iso) 17 21 -- a output current (pin 5) while gnd disconnected or gnd pulled up 6) , v bb =30 v, v in = 0, see diagram page 7 (not tested specified by design) i l(gndhigh) -- -- 2 ma turn-on time in to 90% v out : turn-off time in to 10% v out : r l = 12 ? , t on t off 40 40 90 110 200 250 s slew rate on 10 to 30% v out , r l = 12 ? , d v /dt on 0.1 -- 1 v/ s slew rate off 70 to 40% v out , r l = 12 ? , -d v /dt off 0.1 -- 1 v/ s 6) not tested specified by design
bts 441 t parameter and conditions symbol values unit at t j =-40...+150c, v bb = 12 v unless otherwise specified min typ max infineon technologies ag page 5 2001-june-27 operating parameters operatin g volta g e t j =-40c t j =+25c t j =+105c 6) t j =+150c v bb(on) 4.75 4.75 4.75 5.0 -- -- -- -- 41 43 43 43 v overvolta g e protection 7) t j =-40c: i bb = 40 ma t j =+25...+150c: v bb(az) 41 43 -- 47 -- 52 v standb y current ( pin 3 ) 8) t j =-40...+25c : t j =+105c 6) : v in =0 see diagram page 9 t j =+150c: i bb(off) -- -- -- 5 -- -- 10 10 25 a off-state output current (included in i bb(off) ) v in =0 i l(off) -- 1.5 10 a operating current (pin 1) 9) , v in =5 v, i gnd -- 2 4 ma protection functions current limit (pin 3 to 5) i l(lim) (see timing diagrams, page 9) t j =-40c: t j =25c: t j =+150c: -- -- 40 -- 65 -- 85 -- -- a repetitive short circuit current limit i l(scr) -- 55 -- a t j = t jt (see timing diagrams, page 10) thermal shutdown time 10)11) t j,start =25c: (see timing diagram on page 10) t off(sc) -- 14 -- ms output clamp (inductive load switch off) ; t j =-40c: at v out = v bb - v on(cl) , i l = 40 ma t j =25..150c: v on(cl) 41 43 -- 47 -- 52 v thermal overload trip temperature t jt 150 -- -- c thermal hysteresis ? t jt -- 10 -- k reverse battery (pin 3 to 1) 12) - v bb -- -- 32 v reverse battery voltage drop (v out > v bb ) i l = -2a t j =+150c: -v on(rev) -- 540 -- mv 7) see also v on(cl) in table of protection functions and circuit diagram page 7 8) measured with load, typ. 40 a without load. 9) add i in , if v in >5.5 v 10) not tested specified by design 11) device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70 m thick) copper area for v bb connection. pcb is vertical without blown air. 12) requires 150 ? resistor in gnd connection. the reverse load current through the intrinsic drain-source diode has to be limited by the connected load. note that the power dissipation is higher compared to normal operating conditions due to the voltage drop across the intrinsic drain-source diode. the temperature protection is not active during reverse current operation! input and status currents have to be limited (see max. ratings page 1 and circuit page 7).
bts 441 t parameter and conditions symbol values unit at t j =-40...+150 c, v bb = 12 v unless otherwise specified min typ max infineon technologies ag page 6 2001-june-27 input 13) input resistance see circuit page 7 r i 2.5 3.8 6.5 k ? input turn-on threshold voltage v in(t+) 1.2 -- 2.2 v input turn-off threshold voltage v in(t-) 0.8 -- -- v input threshold hysteresis ? v in(t) -- 0.3 -- v off state input current (pin 2) v in = 0.4 v: i in(off) 1--15 a on state input current (pin 2) v in = 5 v: i in(on) 4.51224 a 13) if a ground resistor r gnd is used, add the voltage drop across this resistor.
bts 441 t infineon technologies ag page 7 2001-june-27 terms profet in out gnd v bb v in i in v bb i l v out i gnd v on 1 2 leadframe, 3 5 i bb r gnd input circuit (esd protection) in gnd i r esd-zd i i i the use of esd zener diodes as voltage clamp at dc conditions is not recommended. inductive and overvoltage output clamp + v bb out gnd profet v z v on v on clamped to 47 v typ. overvolt. and reverse batt. protection + v bb in in r gnd gnd r signal gnd logic profet v z2 i r v z1 load gnd load r out v z1 = 6.1 v typ., v z2 = 47 v typ., r gnd = 150 ? , r i = 3.5 k ? typ. in case of reverse battery the load current has to be limited by the load. temperature protection is not active gnd disconnect profet v in out gnd bb v bb v in v gnd any kind of load. in case of input=high is v out v in - v in(t+) . gnd disconnect with gnd pull up profet v in out gnd bb v bb v gnd v in any kind of load. if v gnd > v in - v in(t+) device stays off
bts 441 t infineon technologies ag page 8 2001-june-27 v bb disconnect with charged inductive load profet v in out gnd bb v bb high for inductive load currents up to the limits defined by z l (max. ratings and diagram on page 8) each switch is protected against loss of v bb . consider at your pcb layout that in the case of vbb dis- connection with energized inductive load all the load current flows through the gnd connection. inductive load switch-off energy dissipation profet v in out gnd bb = e e e e a s bb l r e load r l l { l z energy stored in load inductance: e l = 1 / 2 l i 2 l while demagnetizing load inductance, the energy dissipated in profet is e as = e bb + e l - e r = v on(cl) i l (t) dt, with an approximate solution for r l > 0 ? : e as = i l l 2 r l ( v bb + |v out(cl) |) ln (1+ i l r l |v out(cl) | ) maximum allowable load inductance for a single switch off l = f (i l ); t j,start = 150 c, v bb = 12 v, r l = 0 ? l [mh] 1 10 100 1000 0 5 101520253035 0.1 i l [a]
bts 441 t infineon technologies ag page 9 2001-june-27 typ. on-state resistance r on = f (v bb ,t j ) ; i l = 2 a, in = high r on [m ? ] 40 35 30 25 20 15 10 5 3 5 7 9 30 40 tj = 150c 25c -40c v bb [v] typ. standby current i bb(off) = f (t j ) ; v bb = 9...34 v, in1,2 = low i bb(off) [ a] 0 5 10 15 2 0 -50 0 50 100 150 200 t j [ c]
bts 441 t infineon technologies ag page 10 2001-june-27 timing diagrams figure 1a: v bb turn on: out v v bb in proper turn on under all conditions figure 2a: switching a resistive load, turn-on/off time and slew rate definition: in t v out i l t t on off 90% dv/dton dv/dtoff 10% figure 2b: switching a lamp, in out l t v i figure 3a: short circuit shut down by overtemperature, reset by cooling o th er c h anne l : norma l opera ti on t i in l l(scr) i i l(lim) t off(sc) heating up may require several milliseconds, depending on external conditions figure 4a: overtemperature: reset if t j < t jt in out j t v t
bts 441 t infineon technologies ag page 11 2001-june-27 package and ordering code all dimensions in mm standard (=staggered): p-to220-5-11 sales code bts441t ordering code: q67060-s6112-a2 smd: p-to263-5-2 (tape&reel) sales code bts441t g ordering code: q67060-s6112-a3 straight: p-to220-5-12 sales code bts441t s ordering code: q67060-s6112-a4 published by infineon technoligies ag, bereich bauelemente, vertrieb, produkt-information, balanstra?e 73, d-81541 nchen infineon technologies ag 2001. all rights reserved as far as patents or other rights of third parties are concerned, liability is only assumed for components per se, not for applications, processes and circuits implemented within components or assem- blies. the information describes a type of component and shall not be considered as warranted characteristics. the characteristics for which infineon technologies grants a warranty will only be specified in the purchase contract. terms of delivery and rights to change design reserved. for questions on technology, delivery and prices please contact the offices of semiconductor group in germany or the infineon technologies companies and representatives worldwide (see address list). due to technical requirements components may contain dangerous substances. for information on the type in question please contact your nearest infineon technologies office, semiconductor group. infineon technologies ag is an approved cecc manufacturer. packing: please use the recycling operators known to you. we can also help you - get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of transport. for packing material that is re- turned to us unsorted or which we are not obliged to accept we shall have to invoice you for any costs incurred. components used in life-support devices or systems must be expressly authorised for such purpose! critical components 14 ) of the semiconductor group of infineon technologies ag, may only be used in life supporting devices or systems 15 ) with the express written approval of the semiconductor group of infineon technologies ag. 14) a critical component is a component used in a life-support device or system whose failure can reas onably be expected to cause the failure of that life-support device or system, or to affect its safety or effectiveness of that device or system. 15) life support devices or systems are int ended (a) to be implanted in the human body or (b) support and/or maintain and sustain and/or protect human life. if they fail, it is reasonably to assume that the health of the user or other persons may be endangered. a 8? max. b a 0.25 m 0.1 typical 9.8 ?.15 ?.2 10 8.5 1) 8 1) (15) ?.2 9.25 ?.3 1 0...0.15 5x0.8 ?.1 ?.1 1.27 4.4 b 0.5 ?.1 ?.3 2.7 4.7 ?.5 0.05 1) 0.1 all metal surfaces tin plated, except area of cut. ?.3 1.3 2.4 4x1.7 a a 0.25 m typical 9.8 0.15 2.8 1) 15.65 0.3 13.4 0...0.15 1.7 0.8 0.1 0.1 1.27 4.4 9.25 0.2 0.05 1) all metal surfaces tin plated, except area of cut. c 0.2 17 0.3 8.5 1) 10 0.2 3.7 -0.15 c 2.4 0.5 0.1 0.3 8.6 10.2 0.3 0.4 3.9 0.4 8.4 3.7 0.3 a b a 0.25 m typical 9.8 0.15 2.8 1) 15.65 0.3 13.4 0...0.15 1.7 0.8 0.1 0.1 1.27 4.4 b 9.25 0.2 0.05 1) all metal surfaces tin plated, except area of cut. c 0.2 17 0.3 8.5 1) 10 0.2 3.7 -0.15 c 2.4 0.5 0.1 13 0.5 0.5 11 6x


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