shantou huashan electronic devices co.,ltd . applications high dc current gain absolute maximum ratings t a =25 electrical characteristics t a =25 symbol characteristics min typ max unit test conditions bv ceo(sus) collector-emitter sustaining voltage 100 v i c =30ma, i b =0 i ceo collector cutoff current 2 ma v ce =50v, i b =0 i cbo collector cutoff current 1 ma v cb =100v, i e =0 i ebo emitter-base cutoff current 2 ma v eb =5v, i c =0 h fe 1 dc current gain 1000 v ce =4v, i c =5a h fe 2 500 v ce =4v, i c =10a v ce(sat1) collector- emitter saturation voltage 2 v i c =5a, i b =10ma v ce(sat2) 3 v i c =10a, i b =40ma v be( sat ) base- emitter saturation voltage 3.5 v i c =10a, i b =40ma v be(on) base- emitter on voltage 3 v v ce =4v,i c =10a, t d deiay time 0.15 us t r rise time 0.55 us t s storage time 2.5 us t f fall time 2.5 us vcc=30v,ic=5a i b1= 20ma i b2 =-20ma npn darlington transistor t stg storage temperature - 55~150 t j junction temperature 150 p c collector dissipation t c =25 80w v cbo collector-base voltage 100v v ceo collector-emitter voltage 100v v ebo emitter-base voltage 5v i c collector current dc 10a i b base current 0.5a HP142T 1 D base b 2 D collector c 3 D emitter, e to-220 www..net
shantou huashan electronic devices co.,ltd . npn darlington transistor HP142T www..net
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