emh3 / umh3n / imh3a t r a n s i s t o r s rev.a 1/2 general purpose (dual digit a l transistors) emh3 / umh3n / imh3a z f eatu r es 1) t w o dt ak13t s chip s in a emt or umt or smt p a ckage. 2) mounting possible w i th emt 3 or umt 3 or smt 3 automatic mounting machines. 3) t r ansistor element s are independent, eliminating interference. z s t ru ctu r e epit axial planar ty pe npn silicon transistor t he follow i ng characteristics apply to both dt r 1 and dt r 2 . z equiv a le nt c i rc uit dtr 2 dtr 1 (3) (2) (1) (4) (5) (6) r 1 r 1 r 1 =4.7k ? r 1 =4.7k ? dtr 2 dtr 1 (4) (5) (6) (3) (2) (1) r 1 r 1 emh3 / umh3n imh3a z packag in g sp ecificatio n s package taping code umh3n emh3 type imh3a t2r 8000 ? ? tn 3000 ? ? t110 3000 ? ? basic ordering unit (pieces) z ex te rna l dime ns ions (unit : mm) rohm : emt6 rohm : smt6 eiaj : sc-74 emh3 imh3a rohm : umt6 eiaj : sc-88 umh3n abbreviated symbol : h3 abbreviated symbol : h3 abbreviated symbol : h3 each lead has same dimensions 0.22 1.2 1.6 ( 1 ) ( 2 ) ( 5 ) ( 3 ) ( 6 ) ( 4 ) 0.13 0.5 0.5 0.5 1.0 1.6 each lead has same dimensions 0to0.1 ( 6 ) 2.0 1.3 0.9 0.15 0.7 0.1min. 2.1 0.65 0.2 1.25 ( 1 ) 0.65 ( 4 ) ( 3 ) ( 2 ) ( 5 ) each lead has same dimensions ( 6 ) ( 5 ) ( 4 ) 0.3to0.6 0.15 0.3 1.1 0.8 0to0.1 ( 3 ) 2.8 1.6 1.9 2.9 0.95 ( 2 ) 0.95 ( 1 )
emh3 / umh3n / imh3a t r a n s i s t o r s rev.a 2/2 z a b solute maximum ratings (t a = 25 c) parameter symbol limits unit v cbo 50 v v ceo 50 v v ebo 5v i c 100 ma tj 150 c tstg ? 55 to + 150 c pc emh3,umh3n 150 (total) mw imh3a 300 (total) ? 1 ? 2 collector-base voltage collector-emitter voltage emitter-base voltage collector current junction temperature storage temperature collector power dissipation ? 1 120mw per element must not be exceeded. ? 2 200mw per element must not be exceeded. z electrical ch aracteristics (t a = 25 c) parameter symbol bv cbo bv ceo bv ebo i cbo i ebo h fe v ce(sat) r 1 min. 50 50 5 ? ? 100 ? 3.29 ? ? ? ? ? 250 ? 4.7 ? ? ? 0.5 0.5 600 0.3 6.11 vi c =50 a i c =1ma i e =50 a v cb =50v v eb =4v v ce =5v, i c =1ma i c /i b =5ma/0.25ma ? v v a a ? v k ? typ. max. unit conditions f t ? 250 ? v ce =10v, i e = ? 5ma, f=100mhz ? mhz ? transition frequency of the device collector-base breakdown voltage collector-emitter breakdown voltage emitter-base breakdown voltage collector cutoff current emitter cutoff current dc current transfer ratio transition frequency collector-emitter saturation voltage input resistance z electrical ch aracteristic cu rv es dc current gain : h fe collector current : i c (a) v ce = 5v 100 200 500 1m 2m 5m 10m 20m 50m 100m 1k 500 200 100 50 20 10 5 2 1 ta=100 c 25 c ? 40 c fig.1 dc current gain vs. collector current 100 200 500 1m 2m 5m 10m 20m 50m 100m 1 500m 200m 100m 50m 20m 10m 5m 2m 1m collector saturation voltage : v ce(sat) (v) collector current : i c (a) ta=100 c 25 c ? 40 c l c /l b =20 fig.2 collector-emitter saturation voltage vs. collector current
appendix appendix1-rev1.1 the products listed in this document are designed to be used with ordinary electronic equipment or devices (such as audio visual equipment, office-automation equipment, communications devices, electrical appliances and electronic toys). should you intend to use these products with equipment or devices which require an extremely high level of reliability and the malfunction of with would directly endanger human life (such as medical instruments, transportation equipment, aerospace machinery, nuclear-reactor controllers, fuel controllers and other safety devices), please be sure to consult with our sales representative in advance. notes no technical content pages of this document may be reproduced in any form or transmitted by any means without prior permission of rohm co.,ltd. the contents described herein are subject to change without notice. the specifications for the product described in this document are for reference only. upon actual use, therefore, please request that specifications to be separately delivered. application circuit diagrams and circuit constants contained herein are shown as examples of standard use and operation. please pay careful attention to the peripheral conditions when designing circuits and deciding upon circuit constants in the set. any data, including, but not limited to application circuit diagrams information, described herein are intended only as illustrations of such devices and not as the specifications for such devices. rohm co.,ltd. disclaims any warranty that any use of such devices shall be free from infringement of any third party's intellectual property rights or other proprietary rights, and further, assumes no liability of whatsoever nature in the event of any such infringement, or arising from or connected with or related to the use of such devices. upon the sale of any such devices, other than for buyer's right to use such devices itself, resell or otherwise dispose of the same, no express or implied right or license to practice or commercially exploit any intellectual property rights or other proprietary rights owned or controlled by rohm co., ltd. is granted to any such buyer. products listed in this document are no antiradiation design. about export control order in japan products described herein are the objects of controlled goods in annex 1 (item 16) of export trade control order in japan. in case of export from japan, please confirm if it applies to "objective" criteria or an "informed" (by miti clause) on the basis of "catch all controls for non-proliferation of weapons of mass destruction.
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