050-7426 rev - 8-2002 sot-227 g e e c isotop ? "ul recognized" APT80GP60J 600v maximum ratings all ratings: t c = 25c unless otherwise specified. caution: these devices are sensitive to electrostatic discharge. proper handling procedures should be followed. apt website - http://www.advancedpower.com static electrical characteristics min typ max 600 3 4.5 6 2.5 2.7 2.6 1.0 5 100 symbol bv ces v ge(th) v ce(on) i ces i ges unit volts ma na symbol v ces v ge v gem i c1 i c2 i cm ssoa p d t j ,t stg t l APT80GP60J 600 20 30 151 68 270 270a @ 600v 462 -55 to 150 300 unit volts amps watts c parameter collector-emitter voltage gate-emitter voltage gate-emitter voltage transient continuous collector current @ t c = 25c continuous collector current @ t c = 110c pulsed collector current 1 @ t c = 25c switching safe operating area @ t j = 150c total power dissipation operating and storage junction temperature range max. lead temp. for soldering: 0.063" from case for 10 sec. characteristic / test conditions collector-emitter breakdown voltage (v ge = 0v, i c = 1.0ma) gate threshold voltage (v ce = v ge , i c = 1ma, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 80a, t j = 25c) collector-emitter on voltage (v ge = 15v, i c = 80a, t j = 125c) collector cut-off current (v ce = v ces , v ge = 0v, t j = 25c) 2 collector cut-off current (v ce = v ces , v ge = 0v, t j = 125c) 2 gate-emitter leakage current (v ge = 20v) the power mos 7 ? igbt is a new generation of high voltage power igbts. using punch through technology this igbt is ideal for many high frequency, high voltage switching applications and has been optimized for high frequency switchmode power supplies. ? low conduction loss ? 50 khz operation @ 400v, 50a ? low gate charge ? 20 khz operation @ 400v, 72a ? ultrafast tail current shutoff ? ssoa rated power mos 7 ? igbt g c e
050-7426 rev - 8-2002 APT80GP60J dynamic characteristics symbol c ies c oes c res v gep q g q ge q gc ssoa t d(on) t r t d(off) t f e on1 e on2 e off t d(on) t r t d(off) t f e on1 e on2 e off test conditions capacitance v ge = 0v, v ce = 25v f = 1 mhz gate charge v ge = 15v v ce = 300v i c = 80a t j = 150c, r g = 5 ?, v ge = 15v, l = 100h,v ce = 600v inductive switching (25c) v cc = 400v v ge = 15v i c = 80a r g = 5 ? t j = +25c inductive switching (125c) v cc = 400v v ge = 15v i c = 80a r g = 5 ? t j = +125c characteristic input capacitance output capacitance reverse transfer capacitance gate-to-emitter plateau voltage total gate charge 3 gate-emitter charge gate-collector ("miller ") charge switching soa turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 turn-on delay time current rise time turn-off delay time current fall time turn-on switching energy 4 turn-on switching energy (diode) 5 turn-off switching energy 6 min typ max 9860 722 43 6.3 286 49 81 350 29 58 159 103 tbd 1883 1882 29 58 167 117 tbd 2633 2270 unit pf v nc a ns j ns j unit c/w gm min typ max .27 n/a 29.2 characteristic junction to case (igbt) junction to case (diode) package weight symbol r jc r jc w t thermal and mechanical characteristics apt's devices are covered by one or more of the following u.s.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 1 repetitive rating: pulse width limited by maximum junction temperature. 2 for combi devices, i ces includes both igbt and fred leakages 3 see mil-std-750 method 3471. 4e on1 is the clamped inductive turn-on-energy of the igbt only, without the effect of a commutating diode reverse recovery current adding to the igbt turn-on loss. (see figure 24.) 5e on2 is the clamped inductive turn-on energy that includes a commutating diode reverse recovery current in the igbt turn-on switchi ng loss. a combi device is used for the clamping diode as shown in the e on2 test circuit. (see figures 21, 22.) 6e off is the clamped inductive turn-off energy. (see figures 21, 23.) apt reserves the right to change, without notice, the specifications and information contained herein.
050-7426 rev - 8-2002 typical performance curves APT80GP60J v ce , collecter-to-emitter voltage (v) v ce , collecter-to-emitter voltage (v) figure 1, output characteristics(v ge = 15v) figure 2, output characteristics (v ge = 10v) v ge , gate-to-emitter voltage (v) gate charge (nc) figure 3, transfer characteristics figure 4, gate charge v ge , gate-to-emitter voltage (v) t j , junction temperature (c) figure 5, on state voltage vs gate-to- emitter voltage figure 6, on state voltage vs junction temperature t j , junction temperature (c) t c , case temperature (c) figure 7, breakdown voltage vs. junction temperature figure 8, dc collector current vs case temperature bv ces , collector-to-emitter breakdown v ce , collector-to-emitter voltage (v) i c , collector current (a) i c , collector current (a) voltage (normalized) i c, dc collector current(a) v ce , collector-to-emitter voltage (v) v ge , gate-to-emitter voltage (v) i c , collector current (a) 0 0.5 1 1.5 2 2.5 3 3.5 4 0 0.5 1 1.5 2 2.5 3 3.5 4 012345678 0 50100150200250300 6 8 10 12 14 16 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 -50 -25 0 25 50 75 100 125 150 t j = 25c. 250s pulse test <0.5 % duty cycle t c =-55c t c =125c t c =25c v ce =480v v ce =300v v ce =120v v ge = 10v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle v ge = 15v. 250s pulse test <0.5 % duty cycle i c = 80a t j = 25c t j = 25c t j = -55c t j = 125c t c =-55c t c =25c t c =125c 250s pulse test <0.5 % duty cycle i c= 40a i c= 80a i c= 160a i c= 160a i c= 80a i c= 40a 200 180 160 140 120 100 80 60 40 20 0 350 300 250 200 150 100 50 0 4 3.5 3 2.5 2 1.5 1 0.5 0 1.2 1.15 1.10 1.05 1.0 0.95 0.9 0.85 0.8 200 180 160 140 120 100 80 60 40 20 0 16 14 12 10 8 6 4 2 0 4 3.5 3 2.5 2 1.5 1 0.5 0 200 160 120 80 40 0 i c= 120a
050-7426 rev - 8-2002 APT80GP60J t j = 125c, v ge = 10v or 15v t j = 25c, v ge = 10v or 15v v ce = 400v r g = 5 ? l = 100 h v ge = 15v,t j =125c v ge = 15v v ge = 10v v ge =10v,t j =125c v ge = 10v,t j =25c v ge = 15v,t j =25c t j = 25c, v ge = 10v or 15v i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 9, turn-on delay time vs collector current figure 10, turn-off delay time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 11, current rise time vs collector current figure 12, current fall time vs collector current i ce , collector to emitter current (a) i ce , collector to emitter current (a) figure 13, turn-on energy loss vs collector current figure 14, turn off energy loss vs collector current r g , gate resistance (ohms) t j , junction temperature (c) figure 15, switching energy losses vs. gate resistance figure 16, switching energy losses vs junction temperature r g = 5 ? , l = 100 h, v ce = 400v r g = 5 ? , l = 100 h, v ce = 400v 10 20 30 40 50 60 70 80 90 100 110 120 10 20 30 40 50 60 70 80 90 100 110 120 10 20 30 40 50 60 70 80 90 100 110 120 10 20 30 40 50 60 70 80 90 100 110 120 10 20 30 40 50 60 70 80 90 100 110 120 10 20 30 40 50 60 70 80 90 100 110 120 0 5 10 15 20 25 30 -50 -25 0 25 50 75 100 125 200 180 160 140 120 100 80 60 40 20 0 160 140 120 100 80 60 40 20 0 5000 4000 3000 2000 1000 0 5000 4000 3000 2000 1000 0 v ce = 400v l = 100 h r g = 5 ? v ce = 400v t j = 25c, t j =125c r g = 5 ? l = 100 h e on2 40a e off 80a e on2 80a e on2 120a e off 120a e off 40a e on2 40a e off 80a e on2 80a e on2 120a e off 120a e off 40a t j = 25 or 125c,v ge = 15v t j = 25 or 125c,v ge = 10v v ce = 400v v ge = +15v r g = 5 ? switching energy losses (j) e on2 , turn on energy loss (j) t r, rise time (ns) t d(on) , turn-on delay time (ns) switching energy losses (j) e off , turn off energy loss (j) t f, fall time (ns) t d (off) , turn-off delay time (ns) 50 45 40 35 30 25 20 15 10 5 0 250 200 150 100 50 0 5000 4000 3000 2000 1000 0 8000 7000 6000 5000 4000 3000 2000 1000 0 v ce = 400v v ge = +15v t j = 125c v ce = 400v l = 100 h r g = 5 ? t j =125c, v ge =15v t j = 125c, v ge = 10v or 15v t j =125c,v ge =10v t j = 25c, v ge =10v t j = 25c, v ge =15v
050-7426 rev - 8-2002 typical performance curves 170 100 50 10 8 20 40 60 80 100 120 0.3 0.1 0.05 0.01 0.005 0.001 note: duty factor d = t 1 / t 2 peak t j = p dm x z jc + t c t 1 t 2 p dm z jc , thermal impedance (c/w) 0.05 d=0.5 0.2 0.02 0.01 0.1 single pulse rectangular pulse duration (seconds) figure 19, maximum effective transient thermal impedance, junction-to-case vs pulse duration 10 -5 10 -4 10 -3 10 -2 10 -1 1.0 10 f max , operating frequency (khz) i c , collector current (a) figure 20, operating frequency vs collector current t j = 125 c t c = 75 c d = 50 % v ce = 400v r g = 5 ? max max1 max 2 max1 d (on) r d(off ) f diss cond max 2 on 2 off jc diss jc fmin(f,f) 0.05 f ttt t pp f ee tt p r = = ++ + ? = + ? = APT80GP60J 300 2m50 200 150 100 50 0 i c , collector current (a) v ce , collector-to-emitter voltage (volts) v ce , collector to emitter voltage figure 17, capacitance vs collector-to-emitter voltage figure 18, minimim switching safe operating area 0 10 20 30 40 50 0 100 200 300 400 500 600 700 20,000 10,000 5,000 1,000 500 100 50 10 c ies c oes c res
050-7426 rev - 8-2002 APT80GP60J figure 22, turn-on switching waveforms and definitions figure 23, turn-off switching waveforms and definitions 0 t f collector voltage collector current 10% 90% t j = 125 c t d(off) gate voltage switching energy 90% apt's devices are covered by one or more of the following u.s.patents: 4,895,810 5,045,903 5,089,434 5,182,234 5,019,522 5,262,336 5,256,583 4,748,103 5,283,202 5,231,474 5,434,095 5,528,058 sot-227 (isotop ? ) package outline 31.5 (1.240) 31.7 (1.248) dimensions in millimeters and (inches) 7.8 (.307) 8.2 (.322) 30.1 (1.185) 30.3 (1.193) 38.0 (1.496) 38.2 (1.504) 14.9 (.587) 15.1 (.594) 11.8 (.463) 12.2 (.480) 8.9 (.350) 9.6 (.378) hex nut m4 (4 places) 0.75 (.030) 0.85 (.033) 12.6 (.496) 12.8 (.504) 25.2 (0.992) 25.4 (1.000) 1.95 (.077) 2.14 (.084) * emitter collector gate * r = 4.0 (.157) (2 places) 4.0 (.157) 4.2 (.165) (2 places) w=4.1 (.161) w=4.3 (.169) h=4.8 (.187) h=4.9 (.193) (4 places) 3.3 (.129) 3.6 (.143) * emitter emitter terminals are shorted internally. current handling capability is equal for either source terminal. 5 % t r collector voltage collector current 10% 90% t j = 125 c 5% t d(on) gate voltage switching energy 10% i c a d.u.t. apt 80gp60jd3 v ce fi g ure 21, inductive switchin g test circuit 18v v cc *driver same type as d.u.t. i c v clamp 100uh v test a a b d.u.t. driver* v ce figure 24, e on1 test circuit
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