BBY55-05W jul-12-2001 1 silicon tuning diode excellent linearity high q hyperabrupt tuning diode low series inductance designed for low tuning voltage operation for vco's in mobile communications equipment very low capacitance spread 1 3 vso05561 2 eha07179 3 12 a1 a2 c1/c2 type marking pin configuration package BBY55-05W c5s 1=a1 2=a2 3=c1/c2 sot323 maximum ratings parameter symbol value unit diode reverse voltage v r 16 v forward current i f 20 ma operating temperature range t op -55 ... 150 c storage temperature t st g -55 ... 150
BBY55-05W jul-12-2001 2 electrical characteristics at t a = 25c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics reverse current v r = 15 v i r - - 3 na reverse current v r = 15 v, t a = 65 c i r - - 100 ac characteristics diode capacitance v r = 2 v, f = 1 mhz v r = 4 v, f = 1 mhz v r = 10 v, f = 1 mhz c t 14 10 5.5 15 11 6 16 12 6.5 pf capacitance ratio v r = 2 v, v r = 10 v, f = 1 mhz c t2/ c t10 2 2.5 3 - series resistance v r = 5 v, f = 470 mhz r s - 0.15 0.4 case capacitance f = 1 mhz c c - 0.1 - pf series inductance l s - 1.4 - nh
BBY55-05W jul-12-2001 3 diode capacitance c t = f ( v r ) f = 1mhz 0 2 4 6 8 10 v 14 v r 0 2 4 6 8 10 12 14 16 18 20 22 24 pf 30 c t reverse current i r = f ( v r ) t a = parameter 0 2 4 6 8 10 12 14 v 18 v r -12 10 -11 10 -10 10 -9 10 a i r 25c 60c 80c series resistance r s = f( v r ) f = 470 mhz 0 2 4 6 8 10 v 14 v r 0 0.1 0.2 0.3 ohm 0.5 r s capacitance change c = f ( t a ) f = 1 mhz -50 -30 -10 10 30 50 70 c 110 t a -4 -3 -2 -1 0 1 2 % 4 ? c 1v c =(c(ta)-c(25c))/c(25c) 2v 6v 10v
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