document number: 83638 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.6, 13-dec-07 1 optocoupler, photodarlington output, with internal rbe (single, dual, quad channel) il66/ild66/ilq66 vishay semiconductors description il66, ild66, and ilq66 are optically coupled isolators employing gallium arsenide infrared emitters and silicon photodarlington detectors. switching can be accomplished while maintaining a high degr ee of isolation between driving and load circuits, with no crosstalk between channels. features ? internal rbe for high stability ? four available ctr categories per package type ?bv ceo > 60 v ? standard dip packages ? lead (pb)-free component ? component in accordance to rohs 2002/95/ec and weee 2002/96/ec agency approvals ? ul1577, file no. e52744 system code h or j, double protection ? din en 60747-5-2 (vde 0884)/din en 60747-5-5 pending available with option 1 ? bsi iec 60950 iec 60065 1 2 3 6 5 4 a c n c sin g le channel 1 2 3 4 8 7 6 5 a c c a e c c e dual channel 16 15 14 13 12 11 10 9 1 2 3 4 5 6 7 8 a c c a a c c a e c c e e c c e quad channel i179014 b c e order information part remarks IL66-1 ctr 100 %, dip-6 il66-2 ctr 300 %, dip-6 il66-3 ctr 400 %, dip-6 il66-4 ctr 500 %, dip-6 ild66-1 ctr 100 %, dip-8 ild66-2 ctr 300 %, dip-8 ild66-3 ctr 400 %, dip-8 ild66-4 ctr 500 %, dip-8 ilq66-1 ctr 100 %, dip-16 ilq66-2 ctr 300 %, dip-16 ilq66-3 ctr 400 %, dip-16 ilq66-4 ctr 500 %, dip-16
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83638 2 rev. 1.6, 13-dec-07 il66/ild66/ilq66 vishay semiconductors optocoupler, photodarlington output, with internal rbe (s ingle, dual, quad channel) note for additional information on the availabl e options refer to option information. note t amb = 25 c, unless otherwise specified. stresses in excess of the absolute maximum ratings can cause permanent damage to the device. f unctional operation of the device is not implied at these or any other conditions in excess of those given in the operational sections of this document. exposure to absolute ma ximum ratings for extended periods of the time c an adversely affect reliability. il66-4x009 ctr 500 %, smd-8 (option 9) ild66-2x007 ctr 300 %, smd-8 (option 7) ild66-3x009 ctr 400 %, smd-8 (option 9) ild66-4x009 ctr 500 %, smd-8 (option 9) ilq66-4x007 ctr 500 %, smd-16 (option 7) ilq66-4x009 ctr 500 %, smd-16 (option 9) order information part remarks absolute maximum ratings parameter test condition part symbol value unit input peak reverse voltage v rm 6.0 v forward continuous current i f 60 ma power dissipation p diss 100 mw derate linearly from 25 c 1.33 mw/c output power dissipation p diss 150 mw derate from 25 c 2.0 mw/c coupler isolation test voltage t = 1.0 s v iso 5300 v rms total package power dissipation il66 p tot 250 mw ild66 p tot 400 mw ilq66 p tot 500 mw derate linearly from 25 c il66 3.3 mw/c ild66 5.33 mw/c ilq66 6.67 mw/c creepage distance 7.0 mm clearance distance 7.0 mm comparative tracking index cti 175 isolation resistance v io = 500 v, t amb = 25 c r io 10 12 v io = 500 v, t amb = 100 c r io 10 11 storage temperature t stg - 55 to + 125 c operating temperature t amb - 55 to + 100 c lead soldering time at 260 c 10 s electrical characteristics parameter test condition symbol min. typ. max. unit input forward voltage i f = 20 ma v f 1.25 1.5 v reverse current v r = 6.0 v i r 0.1 10 a capacitance v r = 0 v c o 25 pf
document number: 83638 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.6, 13-dec-07 3 il66/ild66/ilq66 optocoupler, photodar lington output, with internal rbe (single, dual, quad channel) vishay semiconductors note t amb = 25 c, unless otherwise specified. minimum and maximum values are test ing requirements. typical values are characteri stics of the device and are the result of eng ineering evaluation. typical values are for information only and are not part of the testing requirements. typical characteristics t amb = 25 c, unless otherwise specified fig. 1 - forward voltage vs. forward current fig. 2 - normalized non-saturated and saturated ctr ce vs. led current output collector emitter breakdown voltage i c = 1.0 ma, i f = 0 a bv ceo 60 v collector base breakdown voltage (il66) i c = 10 abv cbo 60 v collector emitter leakage current v ce = 50 v, i f = 0 a i ceo 1.0 100 na capacitance collector emitter v ce = 10 v 3.4 pf coupler saturation voltage, collector emitter i c = 10 ma, i f = 10 ma v cesat 0.9 1.0 v electrical characteristics parameter test condition symbol min. typ. max. unit current transfer ratio parameter test condition part symbol min. typ. max. unit current transfer ratio i f = 2.0 ma, v ce = 10 v il(d,q)66-1 ctr 100 400 % il(d,q)66-2 ctr 300 500 % i f = 0.7 ma, v ce = 10 v il(d,q)66-3 ctr 400 500 % i f = 2.0 ma, v ce = 5.0 v il(d,q)66-4 ctr 500 750 % switching characteristics parameter test condition symbol min. typ. max. unit non saturated rise time -1, -2, -4 v cc = 10 v t r 200 s fall time -1, -2, -4 i f = 2.0 ma, r l = 100 t f 200 s rise time -3 i f = 0.7 ma t r 200 s fall time -3 v cc = 10 v, r l = 100 t f 200 s iil66_01 100 10 1 0.1 0.7 0. 8 0.9 1.0 1.1 1.2 1.3 1.4 i f - for w ard c u rrent (ma) v f - for w ard v oltage ( v ) t a = - 55 c t a = 100 c t a = 25 c iil66_02 100 10 1 0.1 2.0 1.5 1.0 0.5 0.0 i f - led c u rrent (ma) n ctrce - n ormalized ctrce n ormalized to: v ce = 5 v i f = 2 ma v ce = 5 v v ce = 1 v
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83638 4 rev. 1.6, 13-dec-07 il66/ild66/ilq66 vishay semiconductors optocoupler, photodarlington output, with internal rbe (s ingle, dual, quad channel) fig. 3 - normalized non-saturated and saturated ctr ce vs. led current fig. 4 - non-saturated and saturated collector emitter current vs. led current fig. 5 - collector base p hotocurrent vs. led current fig. 6 - collector emitter current vs. led current fig. 7 - non-saturated and saturated h fe vs. led current fig. 8 - high to low propagation delay vs. collector load resistance and led current iil66_03 0.0 0.2 0.4 0.6 0. 8 1.0 1.2 0.1 100 1000 i f - led c u rrent (ma) n ctrce - n ormalized ctrce n ormalized to: v ce = 5 v i f = 10 ma 1 10 v ce = 1 v v ce = 5 v iil66_04 i ce - collector emitter c u rrent (ma) 0.1 10 100 10000 1000 100 10 1 0.1 0.01 0.001 i f - led c u rrent (ma) 1 v ce = 1 v v ce = 5 v iil66_05 0.1 100 i f - led c u rrent (ma) i c b - photoc u rrent ( a) 0.1 1 100 1000 110 10 iil66_06 0.1 10 100 1000 10000 1000 100 10 1 0.1 0.01 0.001 v ce = 1 v v ce = 5 v i ce - collector-emitter c u rrent (ma) i b - base c u rrent ( s) 0 iil66_07 0.1 100 1000 25000 20000 15000 10000 5000 0 i b - base c u rrent ( a) h fe - for w ard gain v ce =5 v v ce =1 v 1 10 iil66_0 8 0101520 0 10 20 30 40 50 220 10 k i f - led c u rrent (ma) v cc = 5 v v th = 1.5 v t phl - high/lo w propagation delay ( s) 5
document number: 83638 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.6, 13-dec-07 5 il66/ild66/ilq66 optocoupler, photodar lington output, with internal rbe (single, dual, quad channel) vishay semiconductors fig. 9 - low to high propagation delay vs. collector load resistance and led current fig. 10 - switching waveform fig. 11 - switching schematic iil66_09 10 15 20 0 25 50 75 100 125 150 220 k 2 k 10 k i f - led c u rrent (ma) t plh - lo w / high propagation delay - s v cc = 5 v v th = 1.5 v 5 0 iil66_10 i f t r v o t d t s t f t phl t plh v th = 1.5 v iil66_11 v o r l v cc = 10 v f = 10 khz, df = 50 % i f
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83638 6 rev. 1.6, 13-dec-07 il66/ild66/ilq66 vishay semiconductors optocoupler, photodarlington output, with internal rbe (s ingle, dual, quad channel) package dimensions in millimeters 14770 6.4 max. 7.62 0.1 b 0.4 b technical dra w ings according to di n specifications w eight: ca. 0.50 g creepage distance: > 6 mm air path: > 6 mm after mo u nting on pc b oard 1 2 3 6 5 4 8 . 8 max. 8 .6 max. 1.54 4.2 0.1 2.54 nom. 5.0 8 nom. 0.5 8 max. 3.3 0.5 min. 0.3 a a 9 0.6 0.3 max. i17 8 006 pin one id 0.255 (6.4 8 ) 0.26 8 (6. 8 1) 0.379 (9.63) 0.390 (9.91) 0.030 (0.76) 0.045 (1.14) 4 typ. 0.100 (2.54) typ. 10 3 to 9 0.300 (7.62) typ. 0.01 8 (0.46) 0.022 (0.56) 0.00 8 (0.20) 0.012 (0.30) 0.110 (2.79) 0.130 (3.30) 0.130 (3.30) 0.150 (3. 8 1) 0.020 (0.51) 0.035 (0. 8 9) 0.230 (5. 8 4) 0.250 (6.35) 4 3 2 1 0.031 (0.79) 0.050 (1.27) 5 6 7 8 iso method a
document number: 83638 for technical questi ons, contact: optocoupler.answers@vishay.com www.vishay.com rev. 1.6, 13-dec-07 7 il66/ild66/ilq66 optocoupler, photodar lington output, with internal rbe (single, dual, quad channel) vishay semiconductors 0.255 (6.4 8 ) 0.265 (6. 8 1) 0.779 (19.77) 0.790 (20.07) 0.030 (0.76) 0.045 (1.14) 4 0.100 (2.54) typ. 10 typ. 3 to 9 0.01 8 (0.46) 0.022 (0.56) 0.00 8 (0.20) 0.012 (0.30) 0.110 (2.79) 0.130 (3.30) pin one id 0.130 (3.30) 0.150 (3. 8 1) 0.020 (0.51) 0.035 (0. 8 9) 8 7 6 5 4 3 2 1 9 10 11 12 13 14 15 16 0.031 (0.79) 0.300 (7.62) typ. 0.230 (5. 8 4) 0.250 (6.35) 0.050 (1.27) i17 8 007 iso method a 0.315 ( 8 .0) min. 0.300 (7.62) typ. 0.1 8 0 (4.6) 0.160 (4.1) 0.331 ( 8 .4) min. 0.406 (10.3) max. 0.02 8 (0.7) min. option 7 1 8 494 min. 0.315 ( 8 .00) 0.020 (0.51) 0.040 (1.02) 0.300 (7.62) ref. 0.375 (9.53) 0.395 (10.03) 0.012 (0.30) typ. 0.0040 (0.102) 0.009 8 (0.249) 15 max. option 9
www.vishay.com for technical questions, contact: optocoupler.answers@vishay.com document number: 83638 8 rev. 1.6, 13-dec-07 il66/ild66/ilq66 vishay semiconductors optocoupler, photodarlington output, with internal rbe (s ingle, dual, quad channel) ozone depleting substances policy statement it is the policy of vishay semiconductor gmbh to 1. meet all present and future national an d international stat utory requirements. 2. regularly and continuously improve the performance of ou r products, processes, distri bution and operating systems with respect to their impact on the health and safety of our employ ees and the public, as well as their impact on the environment. it is particular concern to control or eliminate releases of those substances into the atmosp here which are known as ozone depleting substances (odss). the montreal protocol (1987) and its london am endments (1990) intend to severely restrict the use of odss and forbid their use within the next ten years. various national and international in itiatives are pressing for an earlier ban on these substances. vishay semiconductor gmbh has been able to use its policy of c ontinuous improvements to eliminat e the use of odss listed in the following documents. 1. annex a, b and list of transitional substances of the montreal protocol and the london amendments respectively. 2. class i and ii ozone depleting substances in the clean air ac t amendments of 1990 by the environmental protection agency (epa) in the usa. 3. council decision 88/540/eec and 91/690/eec annex a, b and c (transitional substances) respectively. vishay semiconductor gmbh can certify that our semiconductors are not manufactured with ozone depleting substances and do not contain such substances. we reserve the right to make changes to improve technical design and may do so without further notice. parameters can vary in different applicat ions. all operating parameters must be validat ed for each customer application by the customer. should the buyer use vishay semi conductors products for any unintended or unauthorized application, the buyer shall indemnify vishay semiconductors against all claims, costs, damag es, and expenses, arising out of , directly or indirectly, any claim of personal damage, injury or death associat ed with such unintended or unauthorized use. vishay semiconductor gmbh, p.o.b. 3535, d-74025 heilbronn, germany
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