vishay siliconix si2341ds document number: 72263 s09-1503-rev. c, 10-aug-09 www.vishay.com 1 p-channel 30-v (d-s) mosfet features ? halogen-free according to iec 61249-2-21 definition ? trenchfet ? power mosfets ? compliant to rohs directive 2002/95/ec applications ? load switch ? pa switch notes: a. pulse width limited by maximum junction temperature. b. surface mounted on fr4 board, t 5 s. c. surface mounted on fr4 board. product summary v ds (v) r ds(on) ( )i d (a) b - 30 0.072 at v gs = - 10 v - 2.8 0.120 at v gs = - 4.5 v - 2.0 ordering information: si2341ds-t1-e3 (lead (pb)-free) g to-236 (sot-23) s d top view 2 3 1 * marking code si2341ds (f1)* SI2341DS-T1-GE3 (lead (pb)-free and halogen-free) absolute maximum ratings t a = 25 c, unless otherwise noted parameter symbol 5 s steady state unit drain-source voltage v ds - 30 v gate-source voltage v gs 20 continuous drain current (t j = 150 c) b t a = 25 c i d - 2.8 - 2.5 a t a = 70 c - 2.2 - 2.0 pulsed drain current a i dm - 12 continuous source current (diode conduction) b i s - 0.75 - 0.6 power dissipation b t a = 25 c p d 0.9 0.71 w t a = 70 c 0.57 0.45 operating junction and storage temperature range t j , t stg - 55 to 150 c thermal resistance ratings parameter symbol typical maximum unit maximum junction-to-ambient b r thja 115 140 c/w maximum junction-to-ambient c 140 175 maximum junction-to-foot (drain) r thjf 60 75
www.vishay.com 2 document number: 72263 s09-1503-rev. c, 10-aug-09 vishay siliconix si2341ds notes: a. pulse test: pw 300 s, duty cycle 2 %. b. for design aid only, not subject to production testing. c. switching time is essentially independent of operating temperature. stresses beyond those listed under ?absolute maximum ratings? ma y cause permanent damage to the device. these are stress rating s only, and functional operation of the device at these or any other condit ions beyond those indicated in the operational sections of the specifications is not implied. exposure to absolute maximum rating conditions for extended periods may affect device reliability. mosfet specifications t j = 25 c, unless otherwise noted parameter symbol test conditions limits unit min. typ. max. static drain-source breakdown voltage v (br)dss v gs = 0 v, i d = - 10 a - 30 v gate-threshold voltage v gs(th) v ds = v gs , i d = - 250 a - 1.0 - 3.0 gate-body leakage i gss v ds = 0 v, v gs = 20 v 100 na zero gate voltage drain current i dss v ds = - 24 v, v gs = 0 v - 1 a v ds = - 24 v, v gs = 0 v, t j = 55 c - 10 on-state drain current a i d(on) v ds - 5 v, v gs = - 10 v - 6 a drain-source on-resistance a r ds(on) v gs = - 10 v, i d = - 2.8 a 0.057 0.072 v gs = - 4.5 v, i d = - 2.0 a 0.090 0.120 forward transconductance a g fs v ds = - 5 v, i d = - 2.8 a 8.0 s diode forward voltage v sd i s = - 0.75 a, v gs = 0 v - 0.8 - 1.2 v dynamic b total gate charge q g v ds = - 15 v, v gs = - 10 v i d ? - 2.8 a 9.5 15 nc gate-source charge q gs 1.5 gate-drain charge q gd 2.5 input capacitance c iss v ds = - 15 v, v gs = 0 v, f = 1 mhz 400 pf output capacitance c oss 95 reverse transfer capacitance c rss 70 switching c tu r n - o n t i m e t d(on) v dd = - 15 v, r l = 15 i d ? - 1.0 a, v gen = - 4.5 v r g = 6 715 ns t r 15 25 turn-off time t d(off) 20 30 t f 20 30
document number: 72263 s09-1503-rev. c, 10-aug-09 www.vishay.com 3 vishay siliconix si2341ds typical characteristics 25 c unless noted output characteristics on-resistance vs. drain current gate charge 0 2 4 6 8 10 12 0246810 v ds - drain-to-source voltage (v) - drain current (a) i d v gs = 10 v thru 5 v 2 v 3 v r ds(on) - on-resistance ( ) 0.00 0.03 0.06 0.09 0.12 0.15 0246810 i d - drain current (a) v gs = 10 v v gs = 4.5 v 0 2 4 6 8 10 0246810 - gate-to-source voltage (v) q g - total gate charge (nc) v gs v ds = 15 v i d = 3 a transfer characteristics capacitance on-resistance vs. junction temperature 0 2 4 6 8 10 12 0.0 0.5 1.0 1.5 2.0 2.5 3.0 3.5 4.0 v gs - gate-to-source voltage (v) - drain current (a) i d t c = - 55 c 125 c 25 c 0 100 200 300 400 500 600 700 0 5 10 15 20 25 30 v ds - drain-to-source voltage (v) c - capacitance (pf) c rss c oss c iss 0.6 0.8 1.0 1.2 1.4 1.6 - 50 - 25 0 25 50 75 100 125 150 v gs = 10 v i d = 3 a t j - junction temperature (c) (normalized) r ds(on) - on-resistance
www.vishay.com 4 document number: 72263 s09-1503-rev. c, 10-aug-09 vishay siliconix si2341ds typical characteristics 25 c unless noted source-drain diode forward voltage threshold voltage t j = 150 c v sd - source-to-drain voltage (v) - source current (a) i s 20 0.1 0 0.2 0.4 0.6 0.8 1.0 1.2 t j = 25 c 1 10 - 0.4 - 0.2 0.0 0.2 0.4 0.6 - 50 - 25 0 25 50 75 100 125 150 t j - temperature (c) i d = 250 a variance (v) v gs(th) on-resistance vs. gate-to-source voltage single pulse power 0.0 0.2 0.4 0.6 0.8 1.0 0246810 r ds(on) - on-resistance ( ) v gs - gate-to-source voltage (v) i d = 3 a time (s) power (w) t a = 25 c single pulse 10 8 6 4 2 0 0.01 0.1 1 10 100 1000 safe operating area, junction-to-case - drain current (a) i d 100.0 1.0 0.1 1 10 100 0.01 10.0 0.1 limited by r * ds(on) t a = 25 c single pulse 10 ms 100 ms 10 s 100 s 1 ms dc, 100 s, 10 s, 1 s v ds - drain-to-source voltage (v) *v gs minimum v gs at which r ds(on) is specified
document number: 72263 s09-1503-rev. c, 10-aug-09 www.vishay.com 5 vishay siliconix si2341ds typical characteristics 25 c unless noted vishay siliconix maintains worldwide manufacturing capability. pr oducts may be manufactured at one of several qualified locatio ns. reliability data for silicon technology and package reliability represent a composite of all qualified locations. for related documents such as package/tape drawings, part marking, and reliability data, see www.vishay.com/ppg?72263 . normalized thermal transient impedance, junction-to-ambient normalized eff ective transient thermal impedance 2 1 0.1 0.01 square wave pulse duration (s) 10 -4 10 -3 10 -2 10 -1 1 10 600 0.2 0.1 0.05 0.02 single pulse duty cycle = 0.5 1. duty cycle, d = 2. per unit base = r thja = 62.5 c/w 3. t jm - t a = p dm z thja (t) t 1 t 2 t 1 t 2 notes: 4. surface mounted p dm 100
document number: 91000 www.vishay.com revision: 18-jul-08 1 disclaimer legal disclaimer notice vishay all product specifications and data are subject to change without notice. vishay intertechnology, inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively, ?vishay?), disclaim any and all liability fo r any errors, inaccuracies or incompleteness contained herein or in any other disclosure relating to any product. vishay disclaims any and all li ability arising out of the use or application of any product describ ed herein or of any information provided herein to the maximum extent permit ted by law. the product specifications do not expand or otherwise modify vishay?s terms and conditions of purcha se, including but not limited to the warranty expressed therein, which apply to these products. no license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by any conduct of vishay. the products shown herein are not designed for use in medi cal, life-saving, or life-sustaining applications unless otherwise expressly indicated. customers using or selling vishay products not expressly indicated for use in such applications do so entirely at their own risk and agree to fully indemnify vishay for any damages arising or resulting from such use or sale. please contact authorized vishay personnel to obtain written terms and conditions regarding products designed for such applications. product names and markings noted herein may be trademarks of their respective owners.
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