110a phase control thyristors stud version st110s series 1 bulletin i25167 rev. b 01/94 www.irf.com features center gate hermetic metal case with ceramic insulator (also available with glass-metal seal up to 1200v) international standard case to-209ac (to-94) threaded studs unf 1/2 - 20unf2a compression bonded encapsulation for heavy duty operations such as severe thermal cycling typical applications dc motor controls controlled dc power supplies ac controllers i t(av) 110 a @ t c 90 c i t(rms) 175 a i tsm @ 50hz 2700 a @ 60hz 2830 a i 2 t@ 50hz 36.4 ka 2 s @ 60hz 33.2 ka 2 s v drm /v rrm 400 to 1600 v t q typical 100 s t j - 40 to 125 c parameters st110s units major ratings and characteristics case style to-209ac (to-94)
st110s series 2 www.irf.com bulletin i25167 rev. b 01/94 electrical specifications voltage ratings voltage v drm /v rrm , max. repetitive v rsm , maximum non- i drm /i rrm max. type number code peak and off-state voltage repetitive peak voltage @ t j = t j max vvma 04 400 500 08 800 900 st110s 12 1200 1300 20 14 1400 1500 16 1600 1700 i t(av) max. average on-state current 110 a 180 conduction, half sine wave @ case temperature 90 c i t(rms) max. rms on-state current 175 a dc @ 85c case temperature i tsm max. peak, one-cycle 2700 t = 10ms no voltage non-repetitive surge current 2830 t = 8.3ms reapplied 2270 t = 10ms 100% v rrm 2380 t = 8.3ms reapplied sinusoidal half wave, i 2 t maximum i 2 t for fusing 36.4 t = 10ms no voltage initial t j = t j max. 33.2 t = 8.3ms reapplied 25.8 t = 10ms 100% v rrm 23.5 t = 8.3ms reapplied i 2 ? t maximum i 2 ? t for fusing 364 ka 2 ? s t = 0.1 to 10ms, no voltage reapplied v t(to)1 low level value of threshold voltage v t(to) 2 high level value of threshold voltage r t1 low level value of on-state slope resistance r t2 high level value of on-state slope resistance v tm max. on-state voltage 1.52 v i pk = 350a, t j = t j max, t p = 10ms sine pulse i h maximum holding current 600 i l typical latching current 1000 0.90 (16.7% x p x i t(av) < i < p x i t(av) ), t j = t j max. 1.79 (16.7% x p x i t(av) < i < p x i t(av) ), t j = t j max. 1.81 (i > p x i t(av) ),t j = t j max. parameter st110s units conditions 0.92 (i > p x i t(av) ),t j = t j max. on-state conduction ka 2 s v m w ma t j = 25c, anode supply 12v resistive load a di/dt max. non-repetitive rate of rise gate drive 20v, 20 w , t r 1s of turned-on current t j = t j max, anode voltage 80% v drm gate current 1a, di g /dt = 1a/s v d = 0.67% v drm , t j = 25c i tm = 100a, t j = t j max, di/dt = 10a/s, v r = 50v dv/dt = 20v/s, gate 0v 100 w, t p = 500s parameter st110s units conditions t d typical delay time 2.0 switching t q typical turn-off time 100 s 500 a/s
st110s series 3 www.irf.com bulletin i25167 rev. b 01/94 dv/dt maximum critical rate of rise of off-state voltage i rrm max. peak reverse and off-state i drm leakage current blocking 500 v/s t j = t j max. linear to 80% rated v drm parameter st110s units conditions 20 ma t j = t j max, rated v drm /v rrm applied t j max. operating temperature range -40 to 125 t stg max. storage temperature range -40 to 150 r thjc max. thermal resistance, junction to case r thcs max. thermal resistance, case to heatsink t mounting torque, 10% 15.5 non lubricated threads (137) 14 lubricated threads (120) wt approximate weight 130 g parameter st110s units conditions 0.195 dc operation 0.08 mounting surface, smooth, flat and greased thermal and mechanical specification p gm maximum peak gate power 5 t j = t j max, t p 5ms p g(av) maximum average gate power 1 t j = t j max, f = 50hz, d% = 50 i gm max. peak positive gate current 2.0 a t j = t j max, t p 5ms +v gm maximum peak positive gate voltage -v gm maximum peak negative gate voltage i gt dc gate current required t j = - 40c to trigger ma t j = 25c t j = 125c v gt dc gate voltage required t j = - 40c to trigger v t j = 25c t j = 125c i gd dc gate current not to trigger 10 ma parameter st110s units conditions 20 5.0 triggering v gd dc gate voltage not to trigger 0.25 v t j = t j max typ. max. 180 - 90 150 40 - 2.9 - 1.8 3.0 1.2 - max. gate current/ voltage not to trigger is the max. value which will not trigger any unit with rated v drm anode-to-cathode applied max. required gate trigger/ cur- rent/ voltage are the lowest value which will trigger all units 12v anode-to-cathode applied w c k/w nm (lbf-in) case style to - 209ac (to-94) see outline table vt j = t j max, t p 5ms
st110s series 4 www.irf.com bulletin i25167 rev. b 01/94 ordering information table 5 3 4 st 11 0 s 16 p 0 v 7 6 89 d r thjc conduction (the following table shows the increment of thermal resistence r thjc when devices operate at different conduction angles than dc) device code 12 180 0.035 0.025 t j = t j max. 120 0.041 0.042 90 0.052 0.056 k/w 60 0.076 0.079 30 0.126 0.127 conduction angle sinusoidal conduction rectangular conduction units conditions 1 - thyristor 2 - essential part number 3 - 0 = converter grade 4 - s = compression bonding stud 5 - voltage code: code x 100 = v rrm (see voltage rating table) 6 - p = stud base 20unf threads 7 - 0 = eyelet terminals (gate and auxiliary cathode leads) 1 = fast - on terminals (gate and auxiliary cathode leads) 2 = flag terminals (for cathode and gate terminals) 8 - v = glass-metal seal (only up to 1200v) none = ceramic housing (over 1200v) 9 - critical dv/dt: none = 500v/sec (standard value) l = 1000v/sec (special selection)
st110s series 5 www.irf.com bulletin i25167 rev. b 01/94 fast-on terminals case style to-209ac (to-94) all dimensions in millimeters (inches) outline table c.s. 0.4 mm 2 10 (0.39) red shrink red cathode red silicon rubber 4.3 (0.17) dia 21 (0.83) 12. 5 ( 0.49) m ax. 157 (6.18) 170 (6.69) (.0006 s.i.) 8.5 (0.33) dia. 16.5 (0.65) max. max. 70 (2.75) min. ceramic housing 22.5 (0.88) max. dia. 29 (1.14) max. sw 27 c.s. 16mm 2 flexible lead (.025 s.i.) 2.6 (0.10) max. white shrink 2 0 ( 0 . 7 9 ) m i n . 29.5 (1.16) max. 1/2"-20unf-2a 9 . 5 ( 0 . 3 7 ) m i n . white gate 215 (8.46) c.s. 0.4 mm 2 215 (8.46) 10 (0.39) white shrink red shrink red cathode red silicon rubber 4.3 (0.17) dia 21 ( 0.83) 12.5 (0.49) max. 157 (6.18) 170 (6.69) (.0006 s.i.) glass metal seal 8.5 (0.33) dia. 16.5 (0.65) max. 23.5 (0.93) max. dia. max. 29 (1.14) max. 70 (2.75) min. c.s. 16mm 2 flexible lead (.025 s.i.) 2.6 (0.10) max. 2 0 ( 0 . 7 9 ) m i n . 29.5 (1.16) max. 1/2"-20unf-2a sw 27 9 . 5 ( 0 . 3 7 ) m i n . white gate amp. 280000-1 ref-250
st110s series 6 www.irf.com bulletin i25167 rev. b 01/94 case style to-208ad (to-83) all dimensions in millimeters (inches) outline table 10 1/2"-20unf-2a 29.5 (1.16) max. max. 46 (1.81) 10 7.5 (0.30) 22.5 dia. 16.5 (0.65) 12.5 (0.49) 5.2 (0.20) dia. 29 (1.14) (0.39) (0.89) max. 21(0.83) 1.5 (0.06) dia. (0.39) 49 (1.93) max. ceramic housing flag terminals sw 27 2.4 (0.09) 10 1/2"-20unf-2a 29.5 (1.16) max. 46 (1. 81) 23.5 dia. 16.5 (0.65) 12.5 (0.49) 29 (1. 14) max. (0.93) max. 21(0.83) 1.5 (0.06) dia. (0.39) 49 (1. 93) max. glass-metal seal flag terminals sw 27 2.4 (0.09) 10 7.5 (0.30) 5.2 (0.20) dia. (0 39)
st110s series 7 www.irf.com bulletin i25167 rev. b 01/94 fig. 4 - on-state power loss characteristics 80 90 100 110 120 130 0 20406080100120 maximum allowable case temperature ( c) 30 60 90 120 180 average on-state current (a) conduction angle st110s series r (dc) = 0.195 k/w thjc fig. 1 - current ratings characteristics fig. 2 - current ratings characteristics 80 90 100 110 120 130 0 20 40 60 80 100 120 140 160 180 dc 30 60 90 120 180 average on-state current (a) maximum allowable case temperature ( c) conduction period st110s series r (dc) = 1.95 k/w thjc 25 50 75 100 125 maximum allowable ambient temperature ( c) r = 0 . 1 k / w - d e l t a r t h s a 0 . 2 k / w 0 . 3 k / w 0 . 4 k / w 0 . 6 k / w 0 . 8 k / w 1 k / w 0 . 5 k / w 1 . 2 k / w 0 20 40 60 80 100 120 140 160 180 200 220 0 20 40 60 80 100 120 140 160 180 dc 180 120 90 60 30 rms limit conduction period maximum average on-state power loss (w) average on-state current (a) st110s series t = 125c j 25 50 75 100 125 maximum allowable ambient temperature ( c) r = 0. 1 k/ w - d e l t a r 0 . 2 k / w 0 . 3 k / w 0 . 4 k / w 0 . 5 k / w 0 . 6 k / w 1 k / w 0 . 8 k/ w 1 . 2 k / w t h s a 0 20 40 60 80 100 120 140 160 0 20406080100120 180 120 90 60 30 rms limit conduction angle maximum average on -state power loss (w) average on -state curr ent (a) st110s series t = 125c j fig. 3 - on-state power loss characteristics
st110s series 8 www.irf.com bulletin i25167 rev. b 01/94 1000 1200 1400 1600 1800 2000 2200 2400 110100 number of eq ua l amp litude ha lf cycle current pulses (n) peak half sine wave on-state current (a) in itial t = 125 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s st110s series j at any rated load condition and with rated v app lied follow ing surge. rrm 1000 1200 1400 1600 1800 2000 2200 2400 2600 2800 0.01 0.1 1 10 pulse train duration (s) maximum non repetitive surge current versus pulse train duration. control of conduction may not be maintained. peak half sine wave on-state current (a) initial t = 125 c no voltage reapplied rated v reapplied j rrm st110s series 10 100 1000 10000 0.511.522.533.544.55 t = 25 c j instantaneous on-state current (a) instantaneous on-state voltage (v) t = 125c j st110s series fig. 5 - maximum non-repetitive surge current fig. 6 - maximum non-repetitive surge current 0.001 0.01 0.1 1 0.001 0.01 0.1 1 10 square wave pulse duration (s) thjc transient thermal impedance z (k/w) st110s series steady state v alue r = 0.195 k/w (dc operation) thjc fig. 8 - thermal impedance z thjc characteristic fig. 7 - on-state voltage drop characteristics
st110s series 9 www.irf.com bulletin i25167 rev. b 01/94 fig. 9 - gate characteristics 0. 1 1 10 100 0. 001 0.01 0.1 1 10 100 vgd igd (b) (a) tj=25 c tj=125 c tj=-40 c (1) (2) (3) instantaneous gate current (a) instantaneous gate voltage (v) a) recommended load line for b) recommended load line for <=30% rated di/dt : 10v, 10ohms frequency limited by pg(av) rated di/dt : 20v, 10ohms; tr<=1 s tr<=1 s (1) pgm = 10w, tp = 4ms (2) pgm = 20w, tp = 2ms (3) pgm = 40w, tp = 1ms (4) pgm = 60w, tp = 0.66ms device: st110s series rectangular gate pulse (4)
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