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savantic semiconductor product specification silicon npn power transistors 2SC3636 d escription with to-3pn package high voltage ,high speed high reliability applications ultrahigh-definition crt display horizontal deflection output applications pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta= ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 900 v v ceo collector-emitter voltage open base 500 v v ebo emitter-base voltage open collector 7 v i c collector current 7 a i cm collector current-peak 14 a p c collector power dissipation t c =25 80 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pn) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC3636 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v ceo(sus) collector-emitter sustaining voltage i c =100ma ; i b =0 500 v v cesat collector-emitter saturation voltage i c =4a ;i b =0.8a 2.0 v v besat base-emitter saturation voltage i c =4a ;i b =0.8a 1.5 v i cbo collector cut-off current v cb =500v; i e =0 10 a i ces collector cut-off current v ce =900v; r be =0 0.5 ma i ebo emitter cut-off current v eb =5v; i c =0 1.0 ma h fe dc current gain i c =0.8a ; v ce =5v 8 switching times t s storage time 3.0 s t f fall time v cc =200v;i c =4a; i b1 =0.8a; i b2 =-1.6a 0.1 0.2 s
savantic semiconductor product specification 3 silicon npn power transistors 2SC3636 package outline fig.2 outline dimensions (unindicated tolerance:0.1mm)
savantic semiconductor product specification 4 silicon npn power transistors 2SC3636

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