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savantic semiconductor product specification silicon npn power transistors 2SC4111 d escription with to-3pl package high voltage ,high speed wide area of safe operation applications for horizontal deflection output application pinning pin description 1 base 2 collector;connected to mounting base 3 emitter absolute maximum ratings(ta=25 ) symbol parameter conditions value unit v cbo collector-base voltage open emitter 1500 v v ceo collector-emitter voltage open base 700 v v ebo emitter-base voltage open collector 7 v i c collector current 10 a i cm collector current-peak 22 a i b base current 3.5 a t a =25 3.5 p c collector power dissipation t c =25 150 w t j junction temperature 150 t stg storage temperature -55~150 fig.1 simplified outline (to-3pl) and symbol
savantic semiconductor product specification 2 silicon npn power transistors 2SC4111 characteristics tj=25 unless otherwise specified symbol parameter conditions min typ. max unit v (br)ebo eemitter-base breakdown voltage i e =1ma ;i c =0 7 v v cesat collector-emitter saturation voltage i c =7a ;i b =2.5a 5.0 v v besat base-emitter saturation voltage i c =7a ;i b =2.5a 1.5 v v cb =750v; i e =0 10 a i cbo collector cut-off current v cb =1500v; i e =0 1 ma h fe-1 dc current gain i c =1a ; v ce =5v 5 h fe-2 dc current gain i c =7a ; v ce =5v 3 8 f t transition frequency i c =1a ; v ce =10v;f=0.5mhz 2 mhz switching times t s storage time 12 s t f fall time i c =6a ;i b1 =-i b2 =1.7a l leak =5h 0.6 s
savantic semiconductor product specification 3 silicon npn power transistors 2SC4111 package outline fig.2 outline dimensions (unindicated tolerance:0.50 mm)
savantic semiconductor product specification 4 silicon npn power transistors 2SC4111

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