2SC4672 500 mw, 60 v npn plastic-encapsulate transistor elektronische bauelemente 09-mar-2010 rev. b page 1 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. a e c d b k h f g l j 1 2 3 4 ? ? base ? ? emitte r collector ? ? rohs compliant product a suffix of ?-c? specifies halogen & lead-free features ? low saturation voltage, typically v ce(sat) =0.1v at i c /i b =1a/50ma. ? excellent dc current gain characteristics. ? complements the 2sa1797 absolute maximum ratings (t a = 25c unless otherwise specified) parameter symbol rating unit collector to base voltage v cbo 60 v collector to emitter voltage v ceo 50 v emitter to base voltage v ebo 6 v continuous collector current i c 2 a collector power dissipation p c 500 mw junction, storage temperature t j , t stg 150, -55~150 c electrical characteristics (t a = 25c unless otherwise specified) parameter symbol min typ max unit test condition collector to base breakdown voltage v (br)cbo 60 - - v i c =50 a, i e = 0 collector to emitter breakdown voltage v (br)ceo 50 - - v i c =1ma, i b = 0 emitter to base breakdown voltage v (br)ebo 6 - - v i e =50 a, i c = 0 collector cut-off current i cbo - - 0.1 a v cb =60 v, i e = 0 emitter cut-off current i ebo - 0.1 a v eb =5 v, i c = 0 dc current gain h fe 82 - 270 v ce =2v, i c =0.5a collector to emitter saturation voltage v ce(sat) - - 0.35 v i c =1a, i b =50ma transition frequency f t - 210 - mhz v ce = 2v, i c = 500ma, f = 100 mhz collector output capacitance c ob - 25 - pf v cb = 10v, i e = 0 , f=1mhz classification of h fe rank p q range 82~180 120~270 marking dkp dkq sot-89 ref. millimete r ref. millimete r min. max. min. max. a 4.40 4.60 g 0.40 0.58 b 3.94 4.25 h 1.50 typ c 1.40 1.60 j 3.00 typ d 2.30 2.60 k 0.32 0.52 e 1.50 1.70 l 0.35 0.44 f 0.89 1.20
2SC4672 500 mw, 60 v npn plastic-encapsulate transistor elektronische bauelemente 09-mar-2010 rev. b page 2 of 2 http://www.secosgmbh.com/ any changes of specification will not be informed individually. characteristic curves
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