19.05.2000 page 1 hitfet ? ? ? ? = == = bts 133 smart lowside power switch features ? logic level input ? input protection (esd) ? = thermal shutdown with latch ? overload protection ? short circuit protection ? overvoltage protection ? current limitation ? status feedback with external input resistor ? analog driving possible product summary drain source voltage v ds 60 v on-state resistance r ds ( on ) 50 m ? current limit i d ( lim ) 21 a nominal load current i d ( iso ) 7 a clamping energy e a s 2000 mj application ? all kinds of resistive, inductive and capacitive loads in switching or linear applications ? c compatible power switch for 12 v and 24 v dc applications ? replaces electromechanical relays and discrete circuits general description n channel vertical power fet in smart sipmos ? chip on chip tech- nology. fully protected by embedded protected functions. protection overvoltage drain in esd hitfet source current 1 3 over- protection temperature short circuit protection + dv/dt lim itation lim itation v bb short circuit protection load 2 overload protection m
19.05.2000 page 2 bts 133 maximum ratings at tj = 25 c unless otherwise specified parameter symbol value unit drain source voltage v ds 60 v drain source volta g e for short circuit p rotection v ds ( sc ) 32 continuous input current 1) -0.2v v in 10v v in < -0.2v or v in > 10v i in no limit | i in | 2 ma operating temperature t j - 40 ... +150 c storage temperature t st g - 55 ... +150 power dissipation t c = 25 c p tot 90 w unclamped single pulse inductive energy i d(iso) = 7 a e as 2000 mj e lectro s tatic d ischarge voltage (human body model) according to mil std 883d, method 3015.7 and eos/esd assn. standard s5.1 - 1993 v esd 3000 v load dump protection v loaddump 2) = v a + v s v in =low or high; v a =13.5 v t d = 400 ms, r i = 2 ? , i d =0,5*7a t d = 400 ms, r i = 2 ? , i d = 7a v ld 90 74 din humidity category, din 40 040 e iec climatic category; din iec 68-1 40/150/56 thermal resistance junction - case: r thjc 1.4 k/w junction - ambient: r thj a 75 smd version, device on pcb: 3) r thj a 45 1 in case of thermal shutdown a minimum sensor holding current of 500 a has to be guaranteed (see also page 3). 2 v loaddump is setup without the dut connected to the generator per iso 7637-1 and din 40839 3 device on 50mm*50mm*1.5mm epoxy pcb fr4 with 6cm 2 (one layer, 70m thick) copper area for drain connection. pcb mounted vertical without blown air.
19.05.2000 page 3 bts 133 electrical characteristics parameter symbol values unit at t j =25c, unless otherwise specified min. typ. max. characteristics drain source clamp voltage t j = - 40 ...+ 150c, i d = 10 ma v ds(az) 60 - 73 v off state drain current v ds = 32 v, t j = -40...+150 c, v in = 0 v i dss - - 10 a input threshold voltage i d = 1,4 ma v in(th) 1.3 1.7 2.2 v input current - normal operation, i d < i d(lim) : v in = 10 v i in(1) - 30 55 a input current - current limitation mode, i d = i d(lim) : v in = 10 v i in(2) 60 150 350 input current - after thermal shutdown, i d =0 a: v in = 10 v i in(3) 1000 2500 4000 input holding current after thermal shutdown 1) t j = 25 c t j = 150 c i in(h) 500 300 - - - - on-state resistance v in = 5 v, i d = 7 a, t j = 25 c v in = 5 v, i d = 7 a, t j = 150 c r ds(on) - - 50 90 60 120 m ? on-state resistance v in = 10 v, i d = 7 a, t j = 25 c v in = 10 v, i d = 7 a, t j = 150 c r ds(on) - - 40 75 50 100 nominal load current (iso 10483) v in = 10 v, v ds = 0.5 v, t c = 85 c i d(iso) 7 - - a 1 if the input current is limited by external components, low drain currents can flow and heat the device. auto restart behaviour can occur.
19.05.2000 page 4 bts 133 electrical characteristics parameter symbol values unit at t j =25c, unless otherwise specified min. typ. max. characteristics initial peak short circuit current limit v in = 10 v, v ds = 12 v i d(scp) - 65 - a current limit 1) v in = 10 v, v ds = 12 v, t m = 350 s, t j = -40...+150 c i d(lim) 21 28 40 dynamic characteristics turn-on time v in to 90% i d : r l = 2,2 ? , v in = 0 to 10 v, v bb = 12 v t on -- 40 100 s turn-off time v in to 10% i d : r l = 2,2 ? , v in = 10 to 0 v, v bb = 12 v t off -- 70 170 slew rate on 70 to 50% v bb : r l = 2,2 ? , v in = 0 to 10 v, v bb = 12 v -dv ds /dt on -- 1 3 v/s slew rate off 50 to 70% v bb : r l = 2,2 ? , v in = 10 to 0 v, v bb = 12 v dv ds /dt off -- 1 3 protection functions thermal overload trip temperature t j t 150 165 - c unclamped single pulse inductive energy i d = 7 a, t j = 25 c, v bb = 32 v i d = 7 a, t j = 150 c, v bb = 32 v e as 2000 450 - - - - mj inverse diode inverse diode forward voltage i f = 5*7a, t m = 300 s, v in = 0 v v sd - 1.08 - v 1 device switched on into existing short circuit (see diagram determination of i d(lim) ). if the device is in on condition and a short circuit occurs, these values might be exceeded for max. 50 s.
19.05.2000 page 5 bts 133 block diagramm terms inductive and overvoltage output clamp hitfet in d v in i d v ds 1 i in s v bb r l 2 3 hitfet v z d s short circuit behaviour v in i d i d(scp) t 0 tm t 2 i d(lim) t 1 input circuit (esd protection) in esd-zd i source esd zener diodes are not designed for dc current > 2 ma @ v in >10v. t 0 : turn on into a short circuit t m : measurementpoint for i d(lim) t 1 : activation of the fast temperature sensor and regulation of the drain current to a level where the junction temperature remains constant. t 2 : thermal shutdown caused by the second temperature sensor, achieved by an integrating measurement.
19.05.2000 page 6 bts 133 on-state resistance r on = f(t j ); i d =7a; v in =10v -50 -25 0 25 50 75 100 c 150 t j 0 10 20 30 40 50 60 70 80 m ? 100 r ds(on) typ. max. maximum allowable power dissipation p tot = f(t c ) 0 20 40 60 80 100 120 c 160 150 0 10 20 30 40 50 60 70 80 w 100 bts 133 p tot on-state resistance r on = f(t j ); i d = 7a; v in =5v -50 -25 0 25 50 75 100 c 150 t j 0 10 20 30 40 50 60 70 80 90 100 m ? 120 r ds(on) typ. max. typ. input threshold voltage v in(th) = f(t j ); i d =1,4ma; v ds =12v -50 -25 0 25 50 75 100 c 150 t j 0.0 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 v 2.0 v in(th)
19.05.2000 page 7 bts 133 typ. transfer characteristics i d = f(v in ); v ds =12v; t j =25c 0 1 2 3 4 5 6 v 8 v in 0 4 8 12 16 a 24 i d typ. output characteristic i d = f(v ds ); t j =25c parameter: v in 0 1 2 3 v 5 v ds 0 5 10 15 a 25 i d vin=3v 4v 5v 6v 10v transient thermal impedance z thjc = f ( t p ) parameter : d = t p / t 10 -7 10 -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 0 10 2 s t p -3 10 -2 10 -1 10 0 10 1 10 k/w z thjc 0 0.005 0.01 0.02 0.05 0.1 0.2 d=0.5
19.05.2000 page 8 bts 133 application examples: status signal of thermal shutdown by monitoring input current d s in c v bb hitfet v in r st v in thermal shutdown ? v c ? v = r st * i in(3)
19.05.2000 page 9 bts 133 package ordering code p-to220-3-1 Q67060-S6501-A2 package ordering code p-to220-3-45 q67060-s6501-a3 1) shear and punch direction no burrs this surface 1) 0.5 2.4 2.54 1.05 9.2 1.3 4.4 9.9 gpt05164 8 10.5 1.5 1.5 3.6 0.2 0.75 published by infineon technologies ag , bereichs kommunikation st.-martin-strasse 53, d-81541 mnchen ? infineon technologies ag 1999 all rights reserved. attention please! the information herein is given to describe certain components and shall not be considered as warranted characteristics. terms of delivery and rights to technical change reserved. we hereby disclaim any and all warranties, including but not limited to warranties of non-infringement, regarding circuits, descriptions and charts stated herein. infineon technologies is an approved cecc manufacturer. information for further information on technology, delivery terms and conditions and prices please contact your nearest infineon technologies office in germany or our infineon technologies reprensatives worldwide (see address list). warnings due to technical requirements components may contain dangerous substances. for information on the types in question please contact your nearest infineon technologies office. infineon technologies components may only be used in life-support devices or systems with the express written approval of infineon technologies, if a failure of such components can reasonably be expected to cause the failure of that life-support device or system, or to affect the safety or effectiveness of that device or system life support devices or systems are intended to be implanted in the human body, or to support and/or maintain and sustain and/or protect human life. if they fail, it is reasonable to assume that the health of the user or other persons may be endangered.
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