p01xxxa/b ? january 1995 sensitive gate scr symbol parameter value unit i t(rms) rms on-state current (180 conduction angle) tl= 55 c 0.8 a i t(av) mean on-state current (180 conduction angle) tl= 55 c 0.5 a i tsm non repetitive surge peak on-state current (t j initial = 25 c) tp = 8.3 ms 8 a tp = 10 ms 7 i 2 t i 2 t value for fusing tp = 10 ms 0.24 a 2 s di/dt critical rate of rise of on-state current i g =10ma di g /dt = 0.1 a/ m s. 30 a/ m s t stg t j storage and operating junction temperature range - 40, + 150 - 40, + 125 c tl maximum lead temperature for soldering during 10s at 2mm from case 260 c absolute ratings (limiting values) to92 (plastic) p01xxxa i t(rms) =0.8a v drm = 100v to 400v low i gt <1 m a max to < 200 m a features symbol parameter voltage unit abcd v drm v rrm repetitive peak off-state voltage t j = 125 cr gk =1k w 100 200 300 400 v the p01xxxa/b series of scrs uses a high performance planar pnpn technology. these parts are intended for general purpose applications where low gate sensitivity is required. description rd26 (plastic) p01xxxb k g a a g k 1/5
p g (av) = 0.1 w p gm = 2 w (tp = 20 m s) i gm = 1 a (tp = 20 m s) gate characteristics (maximum values) symbol parameter value unit rth(j-a) junction to ambient 150 c/w rth(j-l) junction to leads for dc 80 c/w thermal resistances symbol test conditions sensitivity unit 02 09 11 15 18 i gt v d =12v (dc) r l =140 w tj= 25 c min 4 15 0.5 m a max 200 1 25 50 5 v gt v d =12v (dc) r l =140 w tj= 25 c max 0.8 v v gd v d =v drm r l =3.3k w r gk =1k w tj= 125 c min 0.1 v v rgm i rg =10 m a tj= 25 c min 8 v tgd v d =v drm i tm =3xi t(av ) di g /dt = 0.1a/ m si g = 10ma tj= 25 c typ 0.5 m s i h i t = 50ma r gk =1k w tj= 25 c max 5 ma i l i g =1ma r gk =1k w tj= 25 c max 6 ma v tm i tm = 1.6a tp= 380 m s tj= 25 c max 1.93 v i drm i rrm v d =v drm r gk =1k w v r =v rrm tj= 25 c max 1 m a tj= 125 c max 100 m a dv/dt v d =67%v drm r gk =1k w tj= 125 c min 25 25 50 100 30 v/ m s tq i tm =3xi t(av )v r =35v di/dt=10a/ m s tp=100 m s dv/dt=10v/ m s v d = 67%v drm r gk =1 k w tj= 125 c max 200 m s electrical characteristics ordering information p0102aa scr planar current packages : a = to92 b = rd26 voltage sensitivity ? p01xxxa/b 2/5
0 0.1 0.2 0.3 0.4 0.5 0.6 0.7 0.8 0 0.2 0.4 0.6 0.8 1 p (w) 360 o = 180 o = 120 o =90 o =60 o =30 o dc i (a) t(av) fig.1 : maximum average power dissipation ver- sus average on-state current. 0 102030405060708090100110120130 0 0.2 0.4 0.6 0.8 1 i (a) t(av) = 180 o dc tlead ( c) o fig.3 : average on-state current versus lead tem- perature. igt ih 10.0 9.0 8.0 7.0 6.0 5.0 4.0 3.0 2.0 1.0 0.0 -40 -20 0 20 40 60 80 100 120 140 igt[tj] igt[tj=25 c] o ih[tj] ih[tj=25 c] o tj( c) o fig.5 : relative variation of gate trigger current and holding current versus junction temperature. 0 20406080100120140 0 0.2 0.4 0.6 0.8 1-45 -65 -85 -105 -125 p (w) tlead ( c) o rth(j-l) rth(j-a ) tamb ( c) o fig.2 : correlation between maximum average power dissipation and maximum allowable tem- perature (tamb and tlead). 1e-3 1e-2 1e-1 1 e+0 1 e+1 1e +2 5 e+2 0.01 0.10 1.00 zth(j-a)/rth(j-a) tp (s) fig.4 : relative variation of thermal impedance junction to ambient versus pulse duration. 1 10 100 1,000 0 1 2 3 4 5 6 7 8 tj initial = 25 c o number of cycles i (a) tsm fig.6 : non repetitive surge peak on-state current versus number of cycles. ? p01xxxa/b 3/5
110 0.1 1 10 100 i (a). i 2 t(a 2 s) tsm tj initial = 25 c o i tsm tp(ms) i 2 t fig.7 : non repetitive surge peak on-state current for a sinusoidal pulse with width : tp 10ms, and corresponding value of i 2 t. 0 0.5 1 1.5 2 2.5 3 3.5 4 4.5 5 5.5 0.1 1 10 i (a) tm tj initial 25 c o tj max v (v) tm tj max vto =0.95 v rt =0.600 fig.8 : on-state characteristics (maximum values). 1.0e+00 1.0e+01 1.0e+02 1.0e+03 1.0e+04 1.0e+05 1.0e+06 0.1 1.0 5.0 ih(rgk) ih(rgk=1k ) tj=25 c o rgk( ) fig.9 : relative variation of holding current versus gate-cathode resistance (typical values). ? p01xxxa/b 4/5
package mechanical data to92 (plastic) d f a e b a c ref. dimensions millimeters inches typ. min. max. typ. min. max. a 1.35 0.053 b 4.7 0.185 c 2.54 0.100 d 4.4 4.8 0.173 0.189 e 12.7 0.500 f 3.7 0.146 a 0.45 0.017 marking : type number weight : 0.2 g package mechanical data rd26 (plastic) d g a e 45 b a c f ref. dimensions millimeters inches typ. min. max. typ. min. max. a 2.54 0.100 b 3.7 0.146 c 1.35 0.053 d 4.4 4.8 0.173 0.189 e 12.7 0.500 f 4.7 0.185 g 3.0 0.118 a 0.45 0.177 marking : type number weight : 0.2 g information furnished is believed to be accurate and reliable. however, sgs-thomson microelectronics assumes no responsability for the consequences of use of such information nor for any infringement of patents or other rights of third parties which may result from its use. no license is granted by implication or otherwise under any patent or patent rights of sgs-thomson microelectronics. specifications mentioned in this publication are subject to change without notice. this publication supersedes and replaces all information previously supplied. sgs-tho mson microelectronics products are not authorized for use as critical components in life support devices or systems without express written approval of sgs-thomson microelectronics. ? 1995 sgs-thomson microelectronics - all rights reserved. sgs-thomson microelectronics group of companies australia - brazil - france - germany - hong kong - italy - japan - korea - malaysia - malta - morocco - the netherlands singapore - spain - sweden - switzerland - taiwan - thailand - united kingdom - u.s.a. ? p01xxxa/b 5/5
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