triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information november 2, 2004 note: devices designated as eeu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications subject to change without notice 1 sp3t pin switch TGS2303-EEU key features and performance ? vertical pin monolithic process ? 0.2-18 ghz frequency range ? 0.5 db insertion loss, typical ? 35 db isolation, typical ? 20 db typical input and output return loss ? compatible with fully automated assembly ? series-shunt-shunt configuration chip dimensions 2.16 x 1.65 x 0.1 mm -1.5 -1.3 -1.1 -0.9 -0.7 -0.5 -0.3 -0.1 24681012141618 frequency (ghz) insertion loss (db) -40 -35 -30 -25 -20 -15 -10 -5 0 2 4 6 8 10 12 14 16 18 frequency (ghz) return loss (db) input return loss output return loss typical wafer probe data
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information november 2, 2004 note: devices designated as eeu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications subject to change without notice TGS2303-EEU 2 mechanical drawing notes: 1. gnd is the backside of the mmic 2. please refer to the tgs2304-scc data sheet for the assembly of the tgs2303-scc mmic. the primary difference is the tgs2303 has only 3 output ports.
triquint semiconductor texas : phone (972)994-8465 fax (972)994 8504 web: www.triquint.com advance product information november 2, 2004 note: devices designated as eeu are typically early in their characterization process prior to finalizing all electrical and pr ocess specifications. specifications subject to change without notice assembly process notes gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handling, assembly and test. 8 TGS2303-EEU reflow process assembly notes: use ausn (80/20) solder with limited exposure to temperatures at or above 300 c (30 seconds max). an alloy station or conveyor furnace wi th reducing atmosphere should be used. no fluxes should be utilized. coefficient of thermal expansion matching is critical for long-term reliability. devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: vacuum pencils and/or vacuum collets are the preferred method of pick up. air bridges must be avoided during placement. the force impact is critical during auto placement. organic attachment can be used in low-power applications. curing should be done in a convection oven; proper exhaust is a safety concern. microwave or radiant curing should not be used because of differential heating. coefficient of thermal expansion matching is critical. interconnect process assembly notes: thermosonic ball bonding is the preferred interconnect technique. force, time, and ultrasonics are critical parameters. aluminum wire should not be used. maximum stage temperature is 200 c.
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