composite transistors 1 publication date: february 2004 sjj00188bed XP04654 (xp4654) silicon npn epitaxial planar type (tr1) silicon pnp epitaxial planar type (tr2) for high-speed switching features ? two elements incorporated into one package ? reduction of the mounting area and assembly cost by one half basic part number ? 2sc3757 + 2sa1738 absolute maximum ratings t a = 25 c marking symbol: ed internal connection 4 tr1 tr2 5 6 1 3 2 note) the part number in the parenthesis shows conventional part number. parameter symbol rating unit tr1 collector-base voltage v cbo 40 v (emitter open) collector-emitter voltage v ces 40 v (e-b short) emitter-base voltage v ebo 5v (collector open) collector current i c 100 ma peak collector current i cp 300 ma tr2 collector-base voltage v cbo ? 15 v (emitter open) collector-emitter voltage v ces ? 15 v (e-b short) emitter-base voltage v ebo ? 4v (collector open) collector current i c ? 50 ma peak collector current i cp ? 100 ma overall total power dissipation p t 150 mw junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c unit: mm 5? 10? 2.1 0.1 1.25 0.10 1 3 2 0.2 0.05 0.12 +0.05 ?.02 0.2 0.1 (0.425) 1.3 0.1 2.0 0.1 0 to 0.1 0.9 0.1 0.9 +0.2 ?.1 6 5 4 (0.65) (0.65) 1: emitter (tr1) 4: emitter (tr2) 2: base (tr1) 5: base (tr2) 3: collector (tr2) 6: collector (tr1) eiaj: sc-88 smini6-g1 package
XP04654 2 sjj00188bed ? tr2 note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. electrical characteristics t a = 25 c 3 c ? tr1 note) measuring methods are based on japanese industrial standard jis c 7030 measuring methods for transistors. common characteristics chart p t ? t a 0 160 40 120 80 0 250 100 200 50 150 total power dissipation p t ( mw ) ambient temperature t a ( c ) parameter symbol conditions min typ max unit collector-base cutoff current (emitter open) i cbo v cb = 40 v, i e = 0 0.1 a emitter-base cutoff current (collector open) i ebo v eb = 4 v, i c = 0 0.1 a forward current transfer ratio h fe v ce = 1 v, i c = 10 ma 60 320 ? collector-emitter saturation voltage v ce(sat) i c = 10 ma, i b = 1 ma 0.17 0.25 v base-emitter saturation voltage v be(sat) i c = 10 ma, i b = 1 ma 1.0 v transition frequency f t v cb = 10 v, i e = ? 10 ma, f = 200 mhz 450 mhz collector output capacitance c ob v cb = 10 v, i e = 0, f = 1 mhz 2 6 pf (common base, input open circuited) turn-on time t on refer to the switching time measurement 17 ns turn-off time t off circuit 17 ns storage time t stg 10 ns parameter symbol conditions min typ max unit collector-base cutoff current (emitter open) i cbo v cb = ? 8 v, i e = 0 ? 0.1 a emitter-base cutoff current (collector open) i ebo v eb = ? 3 v, i c = 0 ? 0.1 a forward current transfer ratio h fe1 v ce = ? 1 v, i c = ? 10 ma 50 150 ? h fe2 v ce = ? 1 v, i c = ? 1 ma 30 collector-emitter saturation voltage v ce(sat) i c = ? 10 ma, i b = ? 1 ma ? 0.1 ? 0.2 v transition frequency f t v cb = ? 10 v, i e = 10 ma, f = 200 mhz 800 1 500 mhz collector output capacitance c ob v cb = ? 5 v, i e = 0, f = 1 mhz 1 pf (common base, input open circuited) turn-on time t on refer to the switching time measurement circuit 12 ns turn-off time t off 20 ns storage time t stg 19 ns
XP04654 3 sjj00188bed characteristics charts of tr1 h fe ? i c f t ? i e c ob ? v cb i c ? v ce v ce(sat) ? i c v be(sat) ? i c 220 ? 0.1 f 50 ? v cc = 3 v v out 3.3 k ? 50 ? v in = 10 v 3.3 k ? v bb = ? 3 v v in v out t on 90% 10% 90% 10% t off (waveform at a) v in v out 10% 10% t stg 910 ? 0.1 f 0.1 f a 90 ? v cc = 10 v v out 500 ? 50 ? v in = 10 v 500 ? 1 k ? v bb = 2 v t on , t off test circuit t stg test circuit switching time measurement circuit 0 1.2 1.0 0.8 0.2 0.6 0.4 0 120 100 80 60 40 20 t a = 25 c 2.5 ma 2.0 ma 1.5 ma 1.0 ma 0.5 ma i b = 3.0 ma collector current i c ( ma ) collector-emitter voltage v ce ( v ) 0.1 1 10 100 0.01 0.1 1 10 100 i c / i b = 10 t a = 75 c 25 c ? 25 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) 1 10 100 1 000 0.01 0.1 1 10 100 t a = ? 25 c 25 c 75 c base-emitter saturation voltage v be(sat) ( v ) collector current i c ( ma ) 0.1 1 10 100 0 600 500 400 300 200 100 v ce = 1 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( ma ) ? 1 ? 10 ? 100 ? 1 000 0 600 500 400 300 200 100 v cb = 10 v t a = 25 c transition frequency f t ( mhz ) emitter current i e ( ma ) 110100 0 6 5 4 3 2 1 i e = 0 f = 1 mhz t a = 25 c collector-base voltage v cb ( v ) collector output capacitance (common base, input open circuited) c ob (pf)
XP04654 4 sjj00188bed characteristics charts of tr2 i c ? v ce v ce(sat) ? i c v be(sat) ? i c h fe ? i c f t ? i e c ob ? v cb switching time measurement circuit t on , t off test circuit t stg test circuit 508 ? 30 ? 51 ? v bb = ? 10 v v in v cc = ? 3 v v in = 9.0 v v in = ? 5.8 v v bb = ground v in = 9.8 v v bb = ? 8.0 v v out 0.1 f 34 ? v in 0 0 v out v in v out 90% 90% 90% 10% 10% t stg t on t off 90% 2 k ? 62 ? 51 ? v bb v in v cc = ? 1.5 v v out 0.1 f 52 ? 0 ? 12 ? 10 ? 8 ? 2 ? 6 ? 4 0 ? 60 ? 50 ? 40 ? 30 ? 20 ? 10 t a = 25 c ? 300 a ? 500 a ? 400 a ? 100 a ? 200 a i b = ? 600 a collector current i c ( ma ) collector-emitter voltage v ce ( v ) ? 1 ? 10 ? 100 ? 1 000 ? 0.01 ? 0.1 ? 1 ? 10 ? 100 i c / i b = 10 25 c ? 25 c t a = 75 c collector-emitter saturation voltage v ce(sat) ( v ) collector current i c ( ma ) ? 1 ? 10 ? 100 ? 1 000 ? 0.01 ? 0.1 ? 1 ? 10 ? 100 i c / i b = 10 25 c 75 c t a = ? 25 c base-emitter saturation voltage v be(sat) ( v ) collector current i c ( ma ) ? 0.1 ? 1 ? 10 ? 100 0 240 200 160 120 80 40 v ce = ? 10 v t a = 75 c 25 c ? 25 c forward current transfer ratio h fe collector current i c ( ma ) 1 10 100 0 2 400 2 000 1 600 1 200 800 400 v cb = ? 10 v f = 200 mhz t a = 25 c transition frequency f t ( mhz ) emitter current i e ( ma ) ? 1 ? 10 ? 100 0 2.4 2.0 1.6 1.2 0.8 0.4 i e = 0 f = 1 mhz t a = 25 c collector-base voltage v cb ( v ) collector output capacitance (common base, input open circuited) c ob (pf)
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