ef series ? high thermal efficiency ? complete power control circuits in a single package ? ul recognized e72445 available options electrical specifications description symbol d e f g maximum dc output current (tc = 85c) (single phase rating) i d 50 a 75 a 100 a 125 a maximum voltage drop @ amps peak v f 1.7v @ 50a 1.85v @ 75a 1.4v @ 100a 1.55v @ 125a operating junction temperature range t j -40 - 125c -40 - 125c -40 - 125c -40 - 125c critical rate of rise of on-state current @ tj=125c di/dt 100a/s 100a/s 100a/s 100a/s critical rate of rise of off-state voltage [v/s] dv/dt 500v/s 500v/s 500v/s 500v/s 400 (120 vac) 600 (240 vac) repetitive peak reverse voltage (ac line nominal) [vpk] v rrm 800 (280 vac) 1200 (480 vac) 1400 (530 vac) maximum non-repetitive surge cu rrent (1/2 cycle, 60 hz) [a] i tsm 400 600 1500 1950 maximum i2t for fusing (t=8.3ms) [a2sec] i 2 t 670 1500 9340 15800 minimum required gate current to trigger @ 25c [ma] i gt 60 80 150 150 minimum required gate voltage to trigger @ 25c [v] v gt 2.5 3.0 3.0 3.0 average gate power [w] p g(av) 0.5 0.5 0.5 0.5 maximum peak reverse gate voltage [v] v gm 5.0 5.0 5.0 5.0 maximum thermal resistance, junction to ceramic base per chip r jc 0.8c/w 0.7c/w 0.36c/w 0.3c/w isolation voltage [vrms] v isol 2500 2500 2500 2500 obsolete
general specifications description weight (typical) 7.0 oz (198g) 7.0 oz (198g) 7.0 oz (198g) 7.0 oz (198g) mechanical specifications circuit diagrams obsolete
terminal orientation agency approvals e72445 rev 012710 obsolete
obsolete
annex - enviromental information obsolete
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