Part Number Hot Search : 
88W8964 LC7823N XKD11306 10310 R6020FNX CX4CSM5 MSAU125 NL2063T
Product Description
Full Text Search
 

To Download VG111-F Datasheet File

  If you can't view the Datasheet, Please click here to try to view without PDF Reader .  
 
 


  Datasheet File OCR Text:
  specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 1 of 7 january 2009 vg111 1.7 ? 2.7 ghz variable gain amplifier product information product features ? 1.7 ? 2.7 ghz bandwidth ? 26.6 db attenuation range ? +39.5 dbm output ip3 ? +22 dbm p1db ? constant ip3 & p1db over attenuation range ? single voltage supply ? pb-free 6mm 28-pin qfn package ? mttf > 1000 years applications ? xmit & rcv agc circuitry for mobile infrastructure product description the vg111 is a 1.7-2.7ghz high dynamic range variable gain amplifier (vga) packaged in a low profile pb-free / rohs-compliant surface-mount leadless package that measures 6 x 6 mm square. the +22 dbm output compression point and +39.5 dbm output intercept point of the amplifier are maintained over the entire attenuation range, making the vg111 ideal for use in transmitter and receiver agc circuits and as a variable gain stage following an lna in high dynamic range receiver front ends. superior thermal design allows the product to have a minimum mttf rating of 1000 years at a mounting temperature of +85o c. all devices are 100% rf & dc tested and packaged on tape and reel for automated surface- mount assembly. functional diagram specifications (1) parameter unit min typ max operational bandwidth mhz 1700 2700 test frequency (1) mhz 1900 gain at min. attenuation db 12 14 input return loss db 12 output return loss db 11 output p1db dbm +22 output ip3 (2) dbm +37 +39.5 noise figure at min. attenuation db 4.3 gain variation range (3) db 23.5 26.6 32.5 group delay ns 0.6 supply voltage v +5 amplifier current, pin 25 ma 120 150 180 gain control voltage, v ctrl v 0 4.5 gain control current, vc trl= 4.5v ma 20 1. test conditions unless otherwise noted: 25oc, v dd = +5 v in a tuned application circuit. vctrl is the control voltage through a bjt transistor and a 100 dropping resistor as shown in the same application circuit. 2. 3oip measured with two tones at an output power of +5 dbm/tone separated by 10 mhz. the suppression on the largest im3 product is used to c alculate the 3oip using a 2:1 rule. 3. the gain variation range is measured as the dif ference in gain with vctrl = 0v and vctrl = 4.5v at 1.9 ghz. absolute maximum rating parameter rating storage temperature -55 to +125 c amplifier supply voltage (pin 25) +6 v pin 5 (gain control) current 30 ma rf input power (continuous) +12 dbm junction temperature, tj +160 c thermal resistance, rth 59 c / w operation of this device above any of these paramet ers may cause permanent damage. typical performance parameter units typical frequency (1) mhz 1900 2140 2600 gain at min. attenuation db 14 13.3 8.1 input return loss db 12 14 6.8 output return loss db 11 14 10.5 output p1db dbm +22 +22 +21 output ip3 (2) dbm +39.5 +39.5 +39.5 noise figure at min. attenuation db 4.3 4.5 gain variation range db 26.6 26.6 33.6 supply voltage v +5 amplifier current, pin25 ma 150 ordering information part no. description VG111-F 1.7-2.7ghz variable gain amplifier (lead-free/rohs-compliant qfn package) vg111-pcb1900 1.8 ? 2.0 ghz fully assembled applica tion board vg111-pcb2100 2.0 ? 2.2 ghz fully assembled applica tion board standard t/r size = 500 pieces on a 7? reel. gnd gnd gain ctrl gnd gnd gnd gnd 8 9 10 11 12 13 14 28 27 26 25 24 23 22 7 6 5 4 3 2 1 15 16 17 18 19 20 21 gnd gnd gnd rf out gnd gnd gnd gnd gnd gnd rf in gnd gnd gnd gnd gnd gnd gnd gnd gnd gnd variable attenuator amp
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 2 of 7 january 2009 vg111 1.7 ? 2.7 ghz variable gain amplifier product information application circuit: 1.8 ? 2.0 ghz (vg111-pcb1900) ? the amplifier is biased through pin 25 and should b e connected directly into a voltage regulator. ? components shown in the silkscreen but not on the s chematic are not used for this circuit. ? distances are shown from the edge-to-edge for the l and pattern. circuit board material: .014? fr-4, 4 layers, .062 ? total thickness bill of materials ref. des. description size c1, c7 47 pf chip capacitor 0603 c2, c5 do not place c3, c4 0.01 f chip capacitor 0603 c6 0.5 pf chip capacitor 0603 l1, l2 22 nh chip inductor 0603 r1 100 chip resistor 0603 r2 2.2 chip resistor 0603 q1 mmbt2222 motorola transistor sot-23 u1 vg111 variable gain amplifier qfn 6x6 oip3 vs. output power frequency = 1900, 1901 mhz, 0db atten. 25 30 35 40 45 -4 0 4 8 12 16 output power (dbm) +25c -40c +85c oip3 vs. attenuation setting frequency = 1900, 1901 mhz, +10 dbm/tone, +25 c 25 30 35 40 45 0 2 4 6 8 10 attenuation (db) acpr vs. channel power 1960 mhz, is-95, 9 ch. forward, 885 khz offset, 30 khz meas bw, 25c -70 -60 -50 -40 10 11 12 13 14 15 16 output channel power (dbm) 0db attn 2.5db attn 5db attn 10db attn gain vs. pin 5 attn. control current -20 -15 -10 -5 0 5 10 15 20 0 5 10 15 20 25 pin 5 attenuation control current (ma) +25c -40c +85c normalized gain vs. pin 5 control current 0 5 10 15 20 25 30 35 0.1 1.0 10.0 100.0 pin 5 attenuation control current (ma) +25c -40c +85c
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 3 of 7 january 2009 vg111 1.7 ? 2.7 ghz variable gain amplifier product information vg111-pcb1900 application circuit performance (cont ?d) s21 vs. frequency vctrl=0v (minimum attenuation) 10 11 12 13 14 15 1700 1750 1800 1850 1900 1950 2000 frequency (mhz) -40c +25c +85c s11 vs. frequency vctrl=0v (minimum attenuation) -20 -15 -10 -5 0 1700 1750 1800 1850 1900 1950 2000 frequency (mhz) -40c +25c +85c s22 vs. frequency vctrl=0v (minimum attenuation) -20 -15 -10 -5 0 1700 1750 1800 1850 1900 1950 2000 frequency (mhz) -40c +25c +85c s21 vs. frequency vs. attenuation setting -20 -10 0 10 20 1700 1750 1800 1850 1900 1950 2000 frequency (mhz) 0 db atten 5 db atten 10 db atten 15 db atten 20 db atten 25 db atten s11 vs. frequency vs. attenuation setting -30 -25 -20 -15 -10 -5 0 1700 1750 1800 1850 1900 1950 2000 frequency (mhz) 0 db atten 5 db atten 10 db atten 15 db atten 20 db atten 25 db atten s22 vs. frequency vs. attenuation setting -30 -25 -20 -15 -10 -5 0 1700 1750 1800 1850 1900 1950 2000 frequency (mhz) 0 db atten 5 db atten 10 db atten 15 db atten 20 db atten 25 db atten p1db vs. frequency vctrl=0v (minimum attenuation) 16 18 20 22 24 26 1880 1920 1960 2000 frequency (mhz) -40c +25c +85c noise figure vs. frequency vctrl=0v (minimum attenuation) 0 2 4 6 8 10 1700 1750 1800 1850 1900 1950 2000 frequency (mhz) n f (d b ) -40c +25c +85c
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 4 of 7 january 2009 vg111 1.7 ? 2.7 ghz variable gain amplifier product information application circuit: 2.0 ? 2.2 ghz (vg111-pcb2100) ? the amplifier is biased through pin 25 and should b e connected directly into a voltage regulator. ? components shown in the silkscreen but not on the s chematic are not used for this circuit. ? distances are shown from the edge-to-edge for the l and pattern. circuit board material: .014? fr-4, 4 layers, .062 ? total thickness bill of materials ref. des. description size c1, c7 47 pf chip capacitor 0603 c2 0.2 pf chip capacitor 0603 c3, c4 0.01 f chip capacitor 0603 c5 0.6 pf chip capacitor 0603 c6 do not place l1, l2 22 nh chip inductor 0603 r1 100 chip resistor 0603 r2 2.2 chip resistor 0603 q1 mmbt2222 motorola transistor sot-23 u1 vg111 variable gain amplifier qfn 6x6 oip3 vs. output power frequency = 2140, 2141 mhz, 0db atten. 25 30 35 40 45 -4 0 4 8 12 16 output power (dbm) +25c -40c +85c oip3 vs. attenuation frequency = 2140, 2141 mhz, +10 dbm/tone, +25 c 25 30 35 40 45 0 2 4 6 8 10 attenuation (db) acpr vs. channel power 2140 mhz, 3gpp w-cdma, test model 1 + 64 dpch, 5 m hz offset, 25c -60 -55 -50 -45 -40 11 12 13 14 15 output channel power (dbm) 0db attn 2.5db attn 5db attn 10db attn gain vs. pin 5 attn. control current -20 -15 -10 -5 0 5 10 15 20 0 5 10 15 20 25 pin 5 attenuation control current (ma) +25c -40c +85c normalized gain vs. pin 5 control current 0 5 10 15 20 25 30 35 0.1 1.0 10.0 100.0 pin 5 attenuation control current (ma) +25c -40c +85c
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 5 of 7 january 2009 vg111 1.7 ? 2.7 ghz variable gain amplifier product information vg111-pcb2100 application circuit performance (cont ?d) s21 vs. frequency vctrl=0v (minimum attenuation) 10 11 12 13 14 15 2110 2120 2130 2140 2150 2160 2170 frequency (mhz) -40c +25c +85c s11 vs. frequency vctrl=0v (minimum attenuation) -20 -15 -10 -5 0 2110 2120 2130 2140 2150 2160 2170 frequency (mhz) -40c +25c +85c s22 vs. frequency vctrl=0v (minimum attenuation) -20 -15 -10 -5 0 2110 2120 2130 2140 2150 2160 2170 frequency (mhz) -40c +25c +85c s21 vs. frequency vs. attenuation setting -20 -10 0 10 20 2110 2130 2150 2170 frequency (mhz) 0 db atten 5 db atten 10 db atten 15 db atten 20 db atten 25 db atten s11 vs. frequency vs. attenuation setting -30 -25 -20 -15 -10 -5 0 2110 2130 2150 2170 frequency (mhz) 0 db atten 5 db atten 10 db atten 15 db atten 20 db atten 25 db atten s22 vs. frequency vs. attenuation setting -30 -25 -20 -15 -10 -5 0 2110 2130 2150 2170 frequency (mhz) 0 db atten 5 db atten 10 db atten 15 db atten 20 db atten 25 db atten p1db vs. temperature 2140 mhz, vctrl=0v (minimum attenuation) 14 16 18 20 22 24 -40 -15 10 35 60 85 temperature (c) noise figure vs. frequency vctrl=0v (minimum attenuation) 0 2 4 6 8 10 2110 2120 2130 2140 2150 2160 2170 frequency (mhz) n f (d b ) -40c +25c +85c
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 6 of 7 january 2009 vg111 1.7 ? 2.7 ghz variable gain amplifier product information application circuit: 2.4 ? 2.7 ghz reference design ? the amplifier is biased through pin 25 and should b e connected directly into a voltage regulator. ? components shown in the silkscreen but not on the s chematic are not used for this circuit. ? distances are shown from the edge-to-edge for the l and pattern. circuit board material: .014? fr-4, 4 layers, .062 ? total thickness bill of materials ref. des. description size c1, c7 39 pf chip capacitor 0603 c8 1.2 pf chip capacitor 0603 c3, c4 39 pf chip capacitor 0603 c9 0.8 pf chip capacitor 0603 c5, c6 do not place l1, l2 18 nh chip inductor 0603 r1 100 chip resistor 0603 r2 2.2 chip resistor 0603 q1 transistor sot-23 u1 vg111 variable gain amplifier qfn 6x6 oip3 vs output power 2.5 ghz, 10 mhz spacing, 0 db attenuation 25 30 35 40 45 50 0 2 4 6 8 output power / tone (dbm) o ip 3 (d b m ) gain vs frequency vs control voltage -40 -30 -20 -10 0 10 2300 2400 2500 2600 2700 frequency (mhz) g a in (d b ) vctrl=0v vctrl=4.5v vctrl=2v vctrl=3v vctrl=4v measured s-parameters vctrl = 0, min. attenuation 0 2 4 6 8 10 2300 2400 2500 2600 2700 frequency (mhz) g a i n (d b ) -15 -10 -5 0 5 10 r e tu r n l o s s ( d b ) gain s11 s22
specifications and information are subject to chang e without notice triquint semiconductor, inc ? phone 1-800-wj1-4401 ? fax: 408-577-6633 ? e-mail: info-sales@tqs.com ? web site: www.triquint.com page 7 of 7 january 2009 vg111 1.7 ? 2.7 ghz variable gain amplifier product information mechanical information this package is lead-free/rohs-compliant. the plating ma terial on the pins is annealed matte tin over copper. it is compatible with both lead-free (maximum 260 c reflow temperature) and leaded (maximum 245 c reflow temperature) soldering processes. outline drawing mounting configuration / land pattern product marking the component will be lasermarked with a ?vg111f? designator with an alphanumeric lot code on the top surface of the package. tape and reel specifications for this part will be located on the website in the ?application notes? section. esd / msl information esd rating: class 1b value: passes  500v to <1000v test: human body model (hbm) standard: jedec standard jesd22-a114 esd rating: class iv value: passes  1000v to <2000v test: charged device model (cdm) standard: jedec standard jesd22-c101 msl rating: level 2 at +260 c convection reflow standard: jedec standard j-std-020 functional pin layout function pin no gain control 5 rf input 11 rf output / dc bias 25 no connect or gnd all other pins ground backside copper the even numbered pins are hard grounded to the backside paddle internally. gnd gnd gain ctrl gnd gnd gnd gnd 8 9 10 11 12 13 14 28 27 26 25 24 23 22 7 6 5 4 3 2 1 15 16 17 18 19 20 21 gnd gnd gnd rf out gnd gnd gnd gnd gnd gnd rf in gnd gnd gnd gnd gnd gnd gnd gnd gnd gnd variable attenuator amp


▲Up To Search▲   

 
Price & Availability of VG111-F

All Rights Reserved © IC-ON-LINE 2003 - 2022  

[Add Bookmark] [Contact Us] [Link exchange] [Privacy policy]
Mirror Sites :  [www.datasheet.hk]   [www.maxim4u.com]  [www.ic-on-line.cn] [www.ic-on-line.com] [www.ic-on-line.net] [www.alldatasheet.com.cn] [www.gdcy.com]  [www.gdcy.net]


 . . . . .
  We use cookies to deliver the best possible web experience and assist with our advertising efforts. By continuing to use this site, you consent to the use of cookies. For more information on cookies, please take a look at our Privacy Policy. X