bat 18-04s dec-16-1999 1 silicon pin diode preliminary data low-loss vhf / uhf switch above 10 mhz pin diode with low forward resistance vps05604 6 3 1 5 4 2 eha07464 6 54 3 2 1 c1/a2 c3 a4 a3/c4 c2 a1 d1 d4 d2 d3 type marking pin configuration package bat 18-04s avs 1=a1 2=c2 3=a3/c4 4=a4 5=a3 6=c1/a2 sot-363 maximum ratings parameter symbol value unit diode reverse voltage v r 35 v forward current i f 100 ma operating temperature range t op -55 ... 150 c storage temperature t stg -55 ... 150 thermal resistance junction - ambient 1) r thja tbd k/w junction - soldering point r thjs tbd 1) package mounted on alumina 15mm x 16.7mm x 0.7mm
bat 18-04s dec-16-1999 2 electrical characteristics at t a = 25 c, unless otherwise specified. parameter symbol values unit min. typ. max. dc characteristics reverse current v r = 20 v i r - - 20 na reverse current v r = 20 v, t a = 60 c i r - - 200 a forward voltage i f = 50 ma v f - 0.88 1.2 v ac characteristics diode capacitance v r = 20 v, f = 1 mhz c t - 0.75 1 pf forward resistance i f = 5 ma, f = 100 mhz r f - 0.4 0.7 series inductance l s - 1.4 - nh diode capacitance c t = f ( v r ) f = 1mhz 0 0.0 ehd07019 bat 18... c t r v 10 20 v 30 0.2 0.4 0.6 0.8 1.0 1.2 1.4 1.6 1.8 pf 2.0 forward resistance r f = f ( i f ) f = 100mhz 10 ehd07020 bat 18... r f f -1 0 10 1 10 2 10 ma -1 10 ? 10 1 10 0
bat 18-04s dec-16-1999 3 forward current i f = f ( v f ) 0.40 0.50 0.60 0.70 0.80 v 1.00 v f -6 10 -5 10 -4 10 -3 10 -2 10 -1 10 a i f
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