1 power transistors 2SA1500 silicon pnp epitaxial planar type for power switching n features l high-speed switching l high collector to base voltage v cbo l wide area of safe operation (aso) l satisfactory linearity of foward current transfer ratio h fe n absolute maximum ratings (t c =25?c) parameter collector to base voltage collector to emitter voltage emitter to base voltage peak collector current collector current collector power dissipation junction temperature storage temperature symbol v cbo v ceo v ebo i cp i c p c t j t stg ratings C400 C400 C7 C8 C5 40 1.4 150 C55 to +150 unit v v v a a w ?c ?c n electrical characteristics (t c =25?c) parameter collector cutoff current emitter cutoff current collector to emitter voltage forward current transfer ratio collector to emitter saturation voltage base to emitter saturation voltage transition frequency turn-on time storage time fall time symbol i cbo i ebo v ceo h fe1 * h fe2 v ce(sat) v be(sat) f t t on t stg t f conditions v cb = C400v, i e = 0 v eb = C7v, i c = 0 i c = C10ma, i b = 0 v ce = C5v, i c = C 0.5a v ce = C5v, i c = C2a i c = C2a, i b = C 0.4a i c = C2a, i b = C 0.4a v ce = C10v, i c = C 0.5a, f = 1mhz i c = C2a, i b1 = C 0.4a, i b2 = 0.4a, v cc = C100v min C400 20 8 typ 15 max C100 C100 100 C1.0 C1.5 1.0 2.5 1.0 unit m a m a v v v mhz m s m s m s * h fe1 rank classification rank q p h fe1 20 to 60 50 to 100 t c =25 c ta=25 c unit: mm 1:base 2:collector 3:emitter jedec:toC220(a) eiaj:scC46(a) 10.5 0.5 4.5 0.2 15.4 0.3 6.7 0.3 2.8 0.2 4.2 0.3 2.8 0.2 1.5 0.2 9.3 13.5 0.5 9.5 0.2 1.4 0.1 2.5 0.2 1.4 0.1 0.6 +0.1 ?.2 0.8 0.1 f 3.7 0.2 8.0 0.2 5.08 0.5 2.54 0.3 solder dip 13 2
power transistors 2SA1500 p c ta i c v ce v ce(sat) i c v be(sat) i c h fe i c f t i c c ob v cb t on , t stg , t f i c area of safe operation (aso) 0 160 40 120 80 140 20 100 60 0 60 50 40 30 20 10 (1) t c =ta (2) with a 100 100 2mm al heat sink (3) without heat sink (p c =1.4w) (1) (2) (3) ambient temperature ta ( ?c ) collector power dissipation p c ( w ) 0 ?2 ?0 ? ? ? ? 0 ?.0 ?0.8 ?0.6 ?0.4 ?0.2 t c =25?c i b =?0ma ?ma ?ma ?ma ?ma ?ma ?ma ?ma ?ma ?ma collector to emitter voltage v ce ( v ) collector current i c ( a ) ?0.1 1 ?0 ?00 ?0.3 3 ?0 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 ?0 ?00 i c /i b =5 t c =100?c 25?c ?5?c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) ?0.1 1 ?0 ?00 ?0.3 3 ?0 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 ?0 ?00 i c /i b =5 t c =?5?c 25?c 100?c collector current i c ( a ) base to emitter saturation voltage v be(sat) ( v ) ?0.01 ?0.1 ? ?0 ?0.03 ?0.3 ? ?0.1 ?0.3 ? ? ?0 ?0 ?00 ?00 ?000 v ce =5v t c =100?c 25?c ?5?c collector current i c ( a ) forward current transfer ratio h fe ?0.01 ?0.1 1 ?0 ?0.03 ?0.3 3 0.1 0.3 1 3 10 30 100 300 1000 v ce =?0v f=1mhz t c =25?c collector current i c ( a ) transition frequency f t ( mhz ) ?0.1 1 ?0 ?00 ?0.3 3 ?0 1 3 10 30 100 300 1000 3000 10000 i e =0 f=1mhz t c =25?c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 0 5 ? ? ? ? 0.01 0.03 0.1 0.3 1 3 10 30 100 t f t on t stg pulsed t w =1ms duty cycle=1% i c /i b =5(? b1 =i b2 ) v cc =?00v t c =25?c collector current i c ( a ) switching time t on ,t stg ,t f ( m s ) ? ?0 ?00 ?000 ? ?0 ?00 ?0.01 ?0.03 ?0.1 ?0.3 ? ? ?0 ?0 ?00 non repetitive pulse t c =25?c 10ms t=1ms i cp i c dc collector to emitter voltage v ce ( v ) collector current i c ( a ) 2
power transistors 2SA1500 r th(t) t 10 ? 10 10 ? 10 ? 10 ? 110 3 10 2 10 4 0.1 1 10 100 10000 1000 (1) (2) note: r th was measured at ta=25?c and under natural convection. (1) without heat sink (2) with a 100 100 2mm al heat sink time t ( s ) thermal resistance r th (t) ( ?c/w ) 3
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