1 power f-mos fets unit: mm 2SK2326 silicon n-channel power f-mos fet n features l avalanche energy capacity guaranteed l high-speed switching l low on-resistance l no secondary breakdown n applications l contactless relay l diving circuit for a solenoid l driving circuit for a motor l control equipment l switching power supply 1: gate 2: drain 3: source to-220e package n electrical characteristics (t c = 25c) parameter drain to source cut-off current gate to source leakage current drain to source breakdown voltage gate threshold voltage drain to source on-resistance forward transfer admittance diode forward voltage input capacitance (common source) output capacitance (common source) reverse transfer capacitance (common source) turn-on time (delay time) rise time fall time turn-off time (delay time) thermal resistance between channel and case thermal resistance between channel and atmosphere symbol i dss i gss v dss v th r ds(on) | y fs | v dsf c iss c oss c rss t d(on) t r t f t d(off) r th(ch-c) r th(ch-a) conditions v ds = 480v, v gs = 0 v gs = 30v, v ds = 0 i d = 1ma, v gs = 0 v ds = 25v, i d = 1ma v gs = 10v, i d = 3a v ds = 25v, i d = 3a i dr = 5a, v gs = 0 v ds = 20v, v gs = 0, f = 1mhz v dd = 200v, i d = 3a v gs = 10v, r l = 66.6 w min 600 2 1.7 typ 1 2.8 1300 130 40 20 35 50 150 max 100 1 5 1.5 - 1.6 2.5 62.5 unit m a m a v v w s v pf pf pf ns ns ns ns c/w c/w n absolute maximum ratings (t c = 25c) parameter drain to source breakdown voltage gate to source voltage drain current avalanche energy capacity allowable power dissipation channel temperature storage temperature dc pulse t c = 25c ta = 25c symbol v dss v gss i d i dp eas * p d t ch t stg ratings 600 30 5 10 62.5 50 2 150 - 55 to +150 unit v v a a mj w c c * l = 5mh, i l = 5a, 1 pulse 9.90.3 23 1 4.60.2 2.90.2 2.60.1 2.540.2 0.750.1 1.20.15 5.080.4 15.00.3 13.7 +0.5 C0.2 f 3.20.1 3.00.2 8.00.2 4.10.2 solder dip 1.450.15 0.70.1 7
2 power f-mos fets 2SK2326 area of safe operation (aso) p d ? ta ias ? l-load i d ? v gs r ds(on) ? i d | y fs | ? i d 1 10 100 1000 30 100 10 0.1 0.01 1 3 0.3 0.03 i dp i d t =10 0 m s 1ms 10ms 100ms dc non repetitive pulse t c =25?c drain to source voltage v ds ( v ) drain current i d ( a ) 020 40 60 80 100 120 140 160 0 10 20 30 40 50 60 (1) t c =ta (2) without heat sink (p d =3w) (1) (2) ambient temperature ta ( ?c ) allowable power dissipation p d ( w ) 0.1 1 0.3 3 10 0.01 10 1 0.1 0.03 0.3 3 62.5mj ias max. t c =25?c l-load ( mh ) avalanche current ias ( a ) 010 8 26 4 0 10 8 6 4 2 v ds =25v t c =100?c 25?c 0?c gate to source voltage v gs ( v ) drain current i d ( a ) 0 2468 0 0.5 1.0 1.5 2.0 2.5 t c =100?c 25?c 0?c v gs =10v drain current i d ( a ) drain to source on-resistance r ds(on) ( w ) 0 2468 0 1 2 3 4 5 25?c t c =0?c 100?c v ds =25v drain current i d ( a ) forward transfer admittance |y fs | ( s )
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