maximum ratings: (t a =25 c) symbol units peak repetitive reverse voltage v rrm 60 v continuous forward current i f 140 ma power dissipation p d 350 mw operating and storage junction temperature t j , t stg -65 to +150 c thermal resistance ja 357 c/w electrical characteristics per diode: (t a =25 c unless otherwise noted) symbol test conditions min typ max units i r v r =50v 10 na bv r i r =100 a60v v f i f =20ma 1.0 v c t v r = 0v, f=1.0mhz 5.0 pf t rr i f =i r =10ma, i rr =1.0ma 1000 ns CMKBR-6F surface mount silicon bridge rectifier sot-363 case central semiconductor corp. tm r1 (27-april 2006) description: the central semiconductor CMKBR-6F is a monolithic silicon full wave bridge rectifier, epoxy molded in a sot-363 surface mount package. this device has been designed for use in computers and peripheral equipment requiring high speed switching, small size, and closely matched v f . marking code: cbr3 features: ? monolithic construction ? fast switching ? all diodes share closely matched electrical characteristics. ? very small size
central semiconductor corp. tm sot-363 case - mechanical outline CMKBR-6F surface mount silicon bridge rectifier r1 (27-april 2006) lead code: 1) (+) dc 2) nc 3) ac 4) ( - ) dc 5) nc 6) ac marking code: cbr3
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