regarding the change of names mentioned in the document, such as mitsubishi electric and mitsubishi xx, to renesas technology corp. the semiconductor operations of hitachi and mitsubishi electric were transferred to renesas technology corporation on april 1st 2003. these operations include microcomputer, logic, analog and discrete devices, and memory chips other than drams (flash memory, srams etc.) accordingly, although mitsubishi electric, mitsubishi electric corporation, mitsubishi semiconductors, and other mitsubishi brand names are mentioned in the document, these names have in fact all been changed to renesas technology corp. thank you for your understanding. except for our corporate trademark, logo and corporate statement, no changes whatsoever have been made to the contents of the document, and these changes do not constitute any alteration to the contents of the document itself. note : mitsubishi electric will continue the business operations of high frequency & optical devices and power devices. renesas technology corp. customer support dept. april 1, 2003 to all our customers
mitsubishi nch power mosfet FY7BCH-02F high-speed switching use preliminary notice: this is not a final specification. some parametric limits are subject to change. sep. 2000 3.0 0.275 0.65 1.1 6.4 4.4 ? ?? a?? ?? ? source gate drain a ?? ? ? ? mitsubishi nch power mosfet FY7BCH-02F high-speed switching use preliminary notice: this is not a final specification. some parametric limits are subject to change. FY7BCH-02F outline drawing dimensions in mm application li - ion battery protection tssop8 l 2.5v drive l v dss .................................................................................. 20v l r ds (on) (max) .............................................................. 21m w l i d ........................................................................................... 7a maximum ratings (tc = 25 c) 20 10 7 49 7 1.5 6.0 1.6 C55 ~ +150 C55 ~ +150 0.035 v gs = 0v v ds = 0v l = 10 m h typical value drain-source voltage gate-source voltage drain current drain current (pulsed) avalanche current (pulsed) source current source current (pulsed) maximum power dissipation channel temperature storage temperature weight v v a a a a a w c c g v dss v gss i d i dm i da i s i sm p d t ch t stg symbol parameter conditions ratings unit
mitsubishi nch power mosfet FY7BCH-02F high-speed switching use preliminary notice: this is not a final specification. some parametric limits are subject to change. sep. 2000 electrical characteristics (tch = 25 c) v (br) dss v (br) gss i gss i dss v gs (th) r ds (on) r ds (on) v ds (on) ? y fs ? c iss c oss c rss t d (on) t r t d (off) t f v sd r th (ch-a) t rr v v m a ma v m w m w v s pf pf pf ns ns ns ns v c/w ns 20 10 0.5 0.9 17 21 0.119 20 1350 0.85 50 10 0.1 1.5 21 30 0.147 1.1 78.1 drain-source breakdown voltage gate-source breakdown voltage gate-source leakage current drain-source leakage current gate-source threshold voltage drain-source on-state resistance drain-source on-state resistance drain-source on-state voltage forward transfer admittance input capacitance output capacitance reverse transfer capacitance turn-on delay time rise time turn-off delay time fall time source-drain voltage thermal resistance reverse recovery time symbol unit parameter test conditions limits min. typ. max. i d = 1ma, v gs = 0v i g = 100 m a, v ds = 0v v gs = 10v, v ds = 0v v ds = 20v, v gs = 0v i d = 1ma, v ds = 10v i d = 7a, v gs = 4v i d = 3.5a, v gs = 2.5v i d = 7a, v gs = 4v i d = 7a, v ds = 10v v ds = 10v, v gs = 0v, f = 1mhz v dd = 10v, i d = 3.5a, v gs = 4v, r gen = r gs = 50 w i s = 1.5a, v gs = 0v channel to ambient i s = 1.5a, dis/dt = C50a/ m s
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