product datasheet september 7, 2007 triquint semiconductor texas: phone (972)994-8465 fa x (972)994-8504 info-mmw@tqs.com www.triquint.com rev - 1 dc - 20 ghz discrete power phemt TGF2022-60 key features and performance ? frequency range: dc - 20 ghz ? > 38 dbm nominal psat ? 57% maximum pae ? 12 db nominal power gain ? suitable for high re liability applications ? 6.0mm x 0.35um power phemt ? nominal bias vd = 8- 12v, idq = 448-752ma (u nder rf drive, id rises from 448ma to 1480ma) ? chip dimensions: 0.57 x 2. 93 x 0.10 mm (0.022 x 0.115 x 0.004 in) primary applications ? point-to-point radio ? high-reliability space ? military ? base stations ? broadband wireless applications product description the triquint tgf202 2-60 is a discrete 6.0 mm phemt which operates from dc-20 ghz. the TGF2022-60 is designed using triquint?s proven standard 0.35um power phemt production process. the TGF2022-60 typically provides > 38 dbm of saturated output power with power gain of 12 db. the the maximum power added efficiency is 57% which makes the TGF2022-60 appropriate for high efficiency applications. the TGF2022-60 is also ideally suited for point-to-point radio, high-reliability space, and militar y applications. the TGF2022-60 has a protective surface passivation layer providing environmental robustness. lead-free and rohs compliant 0 5 10 15 20 25 30 35 0246810121416 frequency (ghz) maximum gain (db) mag msg
product datasheet september 7, 2007 triquint semiconductor texas: phone (972)994-8465 fa x (972)994-8504 info-mmw@tqs.com www.triquint.com rev - 2 table i maximum ratings symbol parameter 1/ value notes v + positive supply voltage 12.5 v 2/ v - negative supply voltage range -5v to 0v i + positive supply current (quiescent) 2820 ma 2/ | i g | gate supply current 70 ma p in input continuous wave power 33 dbm 2/ p d power dissipation see note 3 2/ 3 / t ch operating channel temperature 150 c 4/ t m mounting temperature (30 seconds) 320 c t stg storage temperature -65 to 150 c 1/ these ratings represent the maximum operable values for this device. 2/ combinations of supply voltage, supply current, input power, and output power shall not exceed p d . 3/ for a median life time of 1e+6 hrs, power dissipation is limited to: p d (max) = (150 c ? tbase c) / 14.2 ( c/w) 4/ junction operating temperature will directly affect the device median time to failure (t m ). for maximum life, it is recommended that junction temperatures be maintained at the lowest possible levels. TGF2022-60 table ii dc probe characteristics (t a = 25 c, nominal) symbol parameter minimum typical maximum unit idss saturated drain current - 1800 - ma gm transconductance - 2250 - ms v p pinch-off voltage -1.5 -1 -0.5 v v bgs breakdown voltage gate-source -30 - -8 v v bgd breakdown voltage gate-drain -30 - -14 v note: for triquint?s 0.35um power phemt devices, rf breakdown >> dc breakdown
product datasheet september 7, 2007 triquint semiconductor texas: phone (972)994-8465 fa x (972)994-8504 info-mmw@tqs.com www.triquint.com rev - 3 table iii rf characterization table 1/ (t a = 25 c, nominal) symbol parameter f = 10 ghz f = 18 ghz units vd = 10v idq = 448 ma vd = 12v idq = 448 ma vd = 10v idq = 448 ma vd = 12v idq = 448 ma power tuned: psat pae gain l 2/ saturated output power power added efficiency power gain load reflection coefficient 38.8 51.6 12.3 0.898 175.1 39.4 50 12.1 0.891 173.7 37.6 42 7.8 0.93 174.9 38.1 38 7.6 0.942 174.6 dbm % db - efficiency tuned: psat pae gain l 2/ saturated output power power added efficiency power gain load reflection coefficient 37.6 57.0 12.4 0.925 171.5 39.0 53.8 12.4 0.908 171.2 37.2 44.0 7.9 0.943 174.5 37.9 41.0 7.6 0.949 174.4 dbm % db - 1/ values in this table are from measurements taken from a 0.75mm unit phemt cell at 10 and 18 ghz 2/ optimum load impedance for maximum power or maximum pae at 10 and 18 ghz table iv thermal information parameter test conditions t ch ( o c) jc ( c/w) t m (hrs) jc thermal resistance (channel to backside of carrier) vd = 12 v idq = 448 ma pdiss = 5.38 w 146 14.2 1.4e+6 note: assumes eutectic attach using 1.5 mil 80/20 ausn mounted to a 20 mil cumo carrier at 70 c baseplate temperature. TGF2022-60
product datasheet september 7, 2007 triquint semiconductor texas: phone (972)994-8465 fa x (972)994-8504 info-mmw@tqs.com www.triquint.com rev - 4 rgs cgs i r - + lg rg rdg cdg l s r s source source gate drain rd ld v i gmvi rds cds l out TGF2022-60 linear model for 0.75 mm unit phemt cell model parameter vd = 8v id = 56ma vd = 8v id = 75ma vd = 8v id = 94ma vd = 10v id = 56ma vd = 10v id = 75ma vd = 12v id = 56ma units rg 0.18 0.19 0.19 0.20 0.20 0.21 rs 0.31 0.31 0.31 0.36 0.35 0.40 rd 0.41 0.43 0.44 0.41 0.42 0.40 gm 0.242 0.25 0.25 0.23 0.24 0.227 s cgs 1.86 2.019 2.12 2.04 2.15 2.13 pf ri 1.33 1.28 1.28 1.36 1.32 1.38 cds 0.143 0.144 0.144 0.142 0.143 0.142 pf rds 195.83 199.07 206.30 224.73 225.77 244.05 cgd 0.090 0.084 0.079 0.080 0.077 0.076 pf tau 5.94 6.24 6.55 6.82 6.99 7.37 ps ls 0.002 0.002 0.002 0.002 0.002 0.002 nh lg 0.103 0.103 0.103 0.102 0.103 0.102 nh ld 0.110 0.109 0.108 0.108 0.108 0.108 nh rgs 3920 5200 7250 5940 5700 6180 rgd 54900 61900 76900 64100 78100 77000 upc = 0.75mm unit phemt cell gate source source drain upc unit phemt cell reference plane
product datasheet september 7, 2007 triquint semiconductor texas: phone (972)994-8465 fa x (972)994-8504 info-mmw@tqs.com www.triquint.com rev - 5 TGF2022-60 linear model for 6mm phemt l - via = 0.0135 nh (9x) upc upc upc upc upc upc upc upc 1 16 2 15 3 14 4 13 5 12 6 11 7 10 8 9 gate pads (8x) drain pads (8x)
product datasheet september 7, 2007 triquint semiconductor texas: phone (972)994-8465 fa x (972)994-8504 info-mmw@tqs.com www.triquint.com rev - 6 TGF2022-60 unmatched s-paramete rs for 6 mm phemt bias conditions: vd = 12v, idq = 448ma note: the s-parameters are calculated by connecting nodes 1-8 together, and nodes 9-16 together to form a 2-port network. frequency s11 s11 ang s21 s21 ang s12 s12 ang s22 s22 ang (ghz) db deg db deg db deg db deg 0.5 -0.267 -160.66 20.810 96.96 -37.554 9.36 -3.758 -171.94 1 -0.248 -170.31 14.876 88.74 -37.477 3.63 -3.641 -174.40 1.5 -0.244 -173.59 11.346 83.87 -37.501 1.23 -3.583 -174.60 2 -0.241 -175.26 8.817 79.86 -37.554 -0.29 -3.522 -174.25 2.5 -0.238 -176.27 6.834 76.22 -37.626 -1.44 -3.451 -173.72 3 -0.236 -176.97 5.195 72.78 -37.716 -2.37 -3.370 -173.14 3.5 -0.233 -177.47 3.790 69.48 -37.821 -3.15 -3.280 -172.57 4 -0.230 -177.87 2.556 66.28 -37.941 -3.80 -3.183 -172.02 4.5 -0.227 -178.19 1.451 63.17 -38.074 -4.34 -3.079 -171.53 5 -0.223 -178.45 0.445 60.13 -38.220 -4.77 -2.972 -171.10 5.5 -0.220 -178.68 -0.479 57.17 -38.377 -5.09 -2.862 -170.73 6 -0.216 -178.88 -1.338 54.28 -38.545 -5.31 -2.751 -170.42 6.5 -0.212 -179.06 -2.142 51.45 -38.722 -5.43 -2.640 -170.17 7 -0.208 -179.23 -2.899 48.69 -38.906 -5.43 -2.530 -169.99 7.5 -0.204 -179.38 -3.615 46.00 -39.098 -5.32 -2.422 -169.85 8 -0.201 -179.52 -4.297 43.38 -39.294 -5.09 -2.316 -169.77 8.5 -0.197 -179.66 -4.947 40.82 -39.495 -4.74 -2.214 -169.73 9 -0.193 -179.79 -5.570 38.32 -39.699 -4.28 -2.114 -169.74 9.5 -0.189 -179.91 -6.168 35.88 -39.904 -3.70 -2.019 -169.78 10 -0.185 179.97 -6.744 33.50 -40.109 -2.99 -1.927 -169.85 10.5 -0.182 179.85 -7.299 31.19 -40.313 -2.16 -1.839 -169.95 11 -0.178 179.74 -7.835 28.93 -40.513 -1.22 -1.756 -170.08 11.5 -0.175 179.63 -8.354 26.73 -40.709 -0.15 -1.676 -170.23 12 -0.172 179.52 -8.857 24.58 -40.898 1.04 -1.600 -170.40 12.5 -0.169 179.41 -9.344 22.48 -41.079 2.34 -1.527 -170.58 13 -0.166 179.31 -9.818 20.44 -41.251 3.75 -1.459 -170.78 13.5 -0.163 179.21 -10.278 18.44 -41.412 5.26 -1.394 -170.98 14 -0.160 179.10 -10.726 16.49 -41.560 6.87 -1.332 -171.20 14.5 -0.157 179.00 -11.162 14.59 -41.694 8.58 -1.273 -171.43 15 -0.154 178.90 -11.586 12.73 -41.813 10.36 -1.218 -171.66 15.5 -0.152 178.81 -12.001 10.92 -41.916 12.21 -1.165 -171.90 16 -0.150 178.71 -12.405 9.15 -42.001 14.12 -1.115 -172.14 16.5 -0.147 178.61 -12.800 7.41 -42.068 16.07 -1.068 -172.38 17 -0.145 178.51 -13.186 5.71 -42.117 18.06 -1.023 -172.63 17.5 -0.143 178.42 -13.564 4.05 -42.148 20.07 -0.981 -172.88 18 -0.141 178.32 -13.934 2.43 -42.159 22.09 -0.940 -173.13 18.5 -0.139 178.23 -14.296 0.84 -42.153 24.11 -0.902 -173.38 19 -0.137 178.14 -14.650 -0.72 -42.129 26.11 -0.866 -173.63 19.5 -0.135 178.04 -14.998 -2.25 -42.088 28.09 -0.831 -173.87 20 -0.134 177.95 -15.340 -3.75 -42.031 30.03 -0.799 -174.12 20.5 -0.132 177.86 -15.675 -5.22 -41.959 31.93 -0.767 -174.37 21 -0.131 177.77 -16.004 -6.67 -41.874 33.78 -0.738 -174.61 21.5 -0.129 177.68 -16.328 -8.09 -41.776 35.57 -0.709 -174.86 22 -0.128 177.59 -16.647 -9.48 -41.666 37.30 -0.683 -175.10 22.5 -0.126 177.50 -16.961 -10.85 -41.547 38.97 -0.657 -175.34 23 -0.125 177.41 -17.270 -12.20 -41.418 40.57 -0.632 -175.58 23.5 -0.124 177.32 -17.575 -13.53 -41.282 42.11 -0.609 -175.81 24 -0.123 177.23 -17.875 -14.84 -41.139 43.58 -0.587 -176.05 24.5 -0.122 177.14 -18.172 -16.12 -40.991 44.98 -0.565 -176.28 25 -0.120 177.06 -18.466 -17.39 -40.838 46.32 -0.545 -176.51 25.5 -0.119 176.97 -18.756 -18.64 -40.681 47.59 -0.526 -176.74 26 -0.118 176.88 -19.043 -19.88 -40.521 48.80 -0.507 -176.96
product datasheet september 7, 2007 triquint semiconductor texas: phone (972)994-8465 fa x (972)994-8504 info-mmw@tqs.com www.triquint.com rev - 7 gaas mmic devices are susceptible to damage from electrostatic discharge. proper precautions should be observed during handing, assembly and test. mechanical drawing TGF2022-60 0.000 [0.000] 0.030 [0.001] 0.565 [0.022] 2.930 [0.115] 0.328 [0.013] 0.420 [0.017] 0.625 [0.025] 0.608 [0.024] 0.120 [0.005] 0.444 [0.017] 0.865 [0.034] 1.105 [0.044] 1.345 [0.053] 1.585 [0.062] 1.825 [0.072] 2.065 [0.081] 2.305 [0.091] 2.511 [0.099] 2.322 [0.091] 0.328 [0.013] 116 15 2 3 413 14 89 10 11 12 5 6 7 17 18 units: millimeters (inches) thickness: 0. 100 (0.004) chip edge to bond pad dimensions are shown to center of b chip size tolerance : +/- 0.051 (0.002) gnd is backside of mmic bond pads #1-8: (gate) 0.090 x 0.090 (0.004 x 0.004) bond pads #9-16: (drain) 0.090 x 0.090 (0.004 x 0.004) bond pad #17: (vg*) 0.090 x 0.090 (0.004 x 0.004) bond pad #18: (vg*) 0.090 x 0.090 (0.004 x 0.004) *note: bond pads #17 & 18 are alter nate gate pads that can be used for paralleling fets. gate drain
product datasheet september 7, 2007 triquint semiconductor texas: phone (972)994-8465 fa x (972)994-8504 info-mmw@tqs.com www.triquint.com rev - 8 TGF2022-60 reflow process assembly notes: ? use ausn (80/20) solder with limited exposure to temperatures at or above 300 c for 30 sec ? an alloy station or conveyor furnace with reducing atmosphere should be used. ? no fluxes should be utilized. ? coefficient of thermal expansion matching is critical for long-term reliability. ? devices must be stored in a dry nitrogen atmosphere. component placement and adhesive attachment assembly notes: ? vacuum pencils and/or vacuum collets are the preferred method of pick up. ? air bridges must be avoided during placement. ? the force impact is critical during auto placement. ? organic attachment can be used in low-power applications. ? curing should be done in a convection oven; proper exhaust is a safety concern. ? microwave or radiant curing should not be used because of differential heating. ? coefficient of thermal expansion matching is critical. interconnect process assembly notes: ? thermosonic ball bonding is the preferred interconnect technique. ? force, time, and ultrasonics are critical parameters. ? aluminum wire should not be used. ? devices with small pad sizes should be bonded with 0.0007-inch wire. ? maximum stage temperature is 200 c. assembly process notes
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