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forward voltage v f [v] 0 0.2 0.4 0.6 0.8 1 1.2 1.4 1.6 forward voltage 0.1 1 10 100 forward current i f [a] pulse measurement per diode S60HC1R5 tc =125c [max] tc =125c [typ] tc = 25c [max] tc = 25c [typ] 500 200 50 20 5 2 0.5 0.2
0 5 10 15 reverse current 0.1 1 10 100 1000 10000 reverse current i r [ma] reverse voltage v r [v] S60HC1R5 pulse measurement per diode tc=125c [typ] tc=100c [typ] tc= 75c [typ] tc= 50c [typ] tc= 25c [typ]
0 5 10 15 20 25 30 35 40 0 20406080100 forward power dissipation p f [w] average rectified forward current io [a] dc d=0.8 0.5 sin 0.3 0.2 0.1 0.05 forward power dissipation S60HC1R5 tj = 125c 0 t p i o t d=t p /t
0 10 20 30 40 50 60 70 0 5 10 15 20 reverse voltage v r [v] dc d=0.05 0.1 0.2 0.3 0.5 sin 0.8 reverse power dissipation reverse power dissipation p r [w] S60HC1R5 tj = 125c 0 t p v r t d=t p /t
0 20 40 60 80 100 120 140 0 20 40 60 80 100 120 derating curve case temperature tc [c] average rectified forward current io [a] dc d=0.8 0.5 sin 0.3 0.2 0.1 0.05 S60HC1R5 v r = 7.5v 0 t p i o t d=t p /t 0 v r
0 100 200 300 400 500 600 700 800 1 10 100 peak surge forward current i fsm [a] number of cycles [cycle] peak surge forward capability 2 5 20 50 S60HC1R5 i fsm 10ms 10ms 1 cycle non-repetitive, sine wave, tj=25c before surge current is applied
junction capacitance 0.1 1 10 100 1000 10000 junction capacitance c j [pf] reverse voltage v r [v] S60HC1R5 0.2 0.5 2 5 30 f=1mhz tc=25c per diode typ

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