bpx 43 npn-silizium-fototransistor silicon npn phototransistor lead (pb) free produc t - rohs compliant 2007-04-02 1 wesentliche merkmale ? speziell geeignet fr anwendungen im bereich von 450 nm bis 1100 nm ? hohe linearit?t ? hermetisch dichte metallbauform (to-18) mit basisanschluss, geeignet bis 125 c ? gruppiert lieferbar anwendungen ? lichtschranken fr gleich- und wechsellichtbetrieb ? industrieelektronik ? ?messen/steuern/regeln? typ type bestellnummer ordering code fotostrom , e e = 0.5 mw/cm 2 , = 950 nm, v ce = 5 v photocurrent i pce (ma) bpx 43 q62702p0016 > 0.8 bpx 43-3/4 1) 1) nur eine gruppe in einer verpackungseinheit (siehe ?kenn werte?) / only one bin within one packing unit (see ?characteristics?) q62702p3581 1.25?4.0 bpx 43-4 q62702p0016s004 2.0?4.0 bpx 43-4/5 1) q62702p3582 > 2.0 bpx 43-5 q 62702p0016s005 > 3.2 features ? especially suitable for applications from 450 nm to 1100 nm ? high linearity ? hermetically sealed metal package (to-18) with base connection suitable up to 125 c ? available in groups applications ? photointerrupters ? industrial electronics ? for control and drive circuits
2007-04-02 2 bpx 43 grenzwerte maximum ratings bezeichnung parameter symbol symbol wert value einheit unit betriebs- und lagertemperatur operating and storage temperature range t op ; t stg ? 40 ? + 125 c kollektor-emitterspannung collector-emitter voltage v ce 50 v kollektorstrom collector current i c 50 ma kollektorspitzenstrom, < 10 s collector surge current i cs 200 ma emitter-basisspannung emitter-base voltage v eb 7 v verlustleistung, t a = 25 c total power dissipation p tot 220 mw w?rmewiderstand thermal resistance r thja 450 k/w
bpx 43 2007-04-02 3 kennwerte ( t a = 25 c, = 950 nm) characteristics bezeichnung parameter symbol symbol wert value einheit unit wellenl?nge der max. fotoempfindlichkeit wavelength of max. sensitivity s max 880 nm spektraler bereich der fotoempfindlichkeit s = 10% von s max spectral range of sensitivity s = 10% of s max 450 ? 1100 nm bestrahlungsempfindliche fl?che radiant sensitive area a 0.675 mm 2 abmessung der chipfl?che dimensions of chip area l b l w 1 1 mm mm halbwinkel half angle ? 15 grad deg. fotostrom der kollek tor-basis-fotodiode photocurrent of collector-base photodiode e e = 0.5 mw/cm 2 , v cb = 5 v e v = 1000 ix, normlicht/standard light a, v cb = 5 v i pcb i pcb 11 35 a a kapazit?t capacitance v ce = 0 v, f = 1 mhz, e = 0 v cb = 0 v, f = 1 mhz, e = 0 v eb = 0 v, f = 1 mhz, e = 0 c ce c cb c eb 23 39 47 pf pf pf dunkelstrom dark current v ce = 25 v, e = 0 i ceo 20 ( 100) na
2007-04-02 4 bpx 43 die fototransistoren werden nach ihrer fotoemp findlichkeit gruppiert und mit arabischen ziffern gekennzeichnet. the phototransistors are grouped according to thei r spectral sensitivity and distinguished by arabian figures. bezeichnung parameter symbol symbol wert value einheit unit -2 -3 -4 -5 fotostrom, = 950 nm photocurrent e e = 0.5 mw/cm 2 , v ce = 5 v e v = 1000 ix, normlicht/standard light a, v ce = 5 v i pce i pce 0.8 ?1.6 3.8 1.25 ?2.5 6.0 2.0?4.0 9.5 3.2 15.0 ma ma anstiegszeit/abfallzeit rise and fall time i c = 1 ma, v cc = 5 v, r l = 1 k t r , t f 9 12 15 18 s kollektor-emitter-s?ttigungsspannung collector-emitter saturation voltage i c = i pcemin 1) 0.3 e e = 0.5 mw/cm 2 v cesat 200 220 240 260 mv stromverst?rkung current gain e e = 0.5 mw/cm 2 , v ce = 5 v 110 170 270 430 ? 1) i pcemin ist der minimale fotostrom der jeweiligen gruppe. 1) i pcemin is the min. photocurrent of the specified group. i pce i pcb ----------- -
bpx 43 2007-04-02 5 relative spectral sensitivity s rel = f ( ) output characteristics i c = f ( v ce ), i b = parameter photocurrent i pce / i pce25 o = f ( t a ), v ce = 5 v photocurrent i pce = f ( e e ), v ce = 5 v output characteristics i c = f ( v ce ), i b = parameter dark current i ceo / i ceo25 o = f ( t a ), v ce = 25 v, e = 0 total power dissipation p tot = f ( t a ) dark current i ceo = f ( v ce ), e = 0 collector-emitter capacitance c ce = f ( v ce ), f = 1 mhz, e = 0
bpx 43 2007-04-02 6 collector-base capacitance c cb = f ( v cb ), f = 1 mhz, e = 0 directional characteristics s rel = f ( ? ) emitter-base capacitance c eb = f ( v eb ), f = 1 mhz, e = 0
bpx 43 2007-04-02 7 ma?zeichnung package outlines ma?e in mm (inch) / dimensions in mm (inch) ?5.6 (0.220) ?5.3 (0.209) 2.54 (0.100) spacing ?4.8 (0.189) e c b (2.7 (0.106)) 5.1 (0.201) 4.8 (0.189) 14.5 (0.571) 12.5 (0.492) ?0.45 (0.018) radiant gmoy6019 ?4.6 (0.181) 5.4 (0.213) 6.2 (0.244) chip position sensitive area 0.9 (0.035) 1.1 (0.043) 1.1 (0.043) 0.9 (0.035)
2007-04-02 8 bpx 43 l?tbedingungen soldering conditions wellenl?ten (ttw) (nach cecc 00802) ttw soldering (acc. to cecc 00802) published by osram opto semico nductors gmbh wernerwerkstrasse 2, d-93049 regensburg www.osram-os.com ? all rights reserved. the information describes the type of component and shall not be considered as assured characteristics. terms of delivery and rights to change design reserv ed. due to technical requirements components may contain dangerous substances. for information on the types in question please contact our sales organization. packing please use the recycling operators known to you. we can also help you ? get in touch with your nearest sales office. by agreement we will take packing material back, if it is sorted. you must bear the costs of tr ansport. for packing material that is returned to us unsorted or which we are not obliged to accept, we shall have to invoice you for any costs incurred. components used in life-support devices or system s must be expressly authorized for such purpose! critical components 1 , may only be used in life-support devices or systems 2 with the express written approval of osram os. 1 a critical component is a component usedin a life-support device or system whose failure can reasonably be expected to cause the failure of that life-support de vice or system, or to affect its safety or effectiveness of that device or system. 2 life support devices or systems are intended (a) to be impl anted in the human body, or (b) to support and/or maintain and sustain human life. if they fail, it is reasonable to assume that the health of the user may be endangered. ohly0598 0 0 50 100 150 200 250 50 100 150 200 250 300 t t c s 235 c 10 s c ... 260 1. welle 1. wave 2. welle 2. wave 5 k/s 2 k/s ca 200 k/s cc ... 130 100 2 k/s zwangskhlung forced cooling normalkurve standard curve grenzkurven limit curves
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