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| RB471E diodes schottky barrier diode RB471E z z z z applications low current rectification for switching power supplies z z z z features 1) small surface mounting dual element parallel type. (smd5) 2) low v f .( v f =0.45v typ. at 100ma ) 3) high reliability. z z z z construction silicon epitaxial planar z z z z circuit z z z z external dimensions (units : mm) rohm : smd5 eiaj : sc - 74a jedec : ? 0 ~ 0.1 0.3 ~ 0.6 2.8 0.2 1.6 1.1 0.8 0.1 0.15 0.3 2.9 0.2 1.9 0.2 0.95 0.95 + 0.2 ? 0.1 ? 0.1 + 0.2 + 0.1 ? 0.06 + 0.1 ? 0.05 d 3 g (all leads have same dimentions) z z z z absolute maximum ratings (ta = 25 c) parameter symbol limits unit peak reverse voltage v rm 40 v dc reverse voltage v r 40 v mean rectifying current i o 0.1 a peak forward surge current ? i fsm 1a junction temperature 125 c storage temperature c t j t stg ? 40 ~ + 125 ? 60 hz for 1
RB471E diodes z z z z electrical characteristics (ta = 25 c) note) esd sensitive product handling required. parameter symbol min. typ. max. unit conditions forward voltage v f1 ? 0.28 0.34 v i f = 10ma v f2 ? 0.45 0.55 v i f = 100ma reverse current i r ? 130 av r = 10v capacitance between terminals ? 6.0 ? pf v r = 10v, f = 1mhz c t z z z z electrical characteristic curves (ta = 25 c) 0 1 100m 10m 1m 100 10 0.1 0.2 0.3 0.4 0.5 0.6 0.7 ta = 125 c 75 c 25 c ? 25 c pulse measurement typ. forward current : i f ( a) forward voltage : v f ( v) fig. 1 forward characteristics 0 5 10 15 20 25 30 35 10m 1m 100 10 1 0.1 pulse measurement typ. reverse : current : i r ( a) reverse voltage : v r ( v) fig. 2 reverse characteristics ta = 125 c 75 c 25 c 0 5 10 15 20 25 0.1 1 10 100 capacitance between terminals : c t ( pf) reverse voltage : v r ( v) fig. 3 capacitance between terminals characteristics 0 0 20 40 60 80 100 25 50 75 100 125 io current (%) ambient temperature : ta ( c ) fig 4. derating curve (mounting on glass epoxy pcbs) |
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