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R1E10 CM431 33200 AS4C4M4 1N4760 CD4046BM CAT24C44 H11A817
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  emz6.8n diodes zener diode emz6.8n z applications constant voltage control z features 1) small surface mounting type. (emd3) 2) composite type with two anode common elements 3) high reliability z construction silicon epitaxial planar z circuit z external dimensions (units: mm) rohm : emd3 eiaj : sc-75a jedec : sot-416 6 c 0.2 0.2 0.50.5 1.0?.1 1.6?.2 0.3 0.8 0.1 1.6 0.2 -0.05 +0.1 +0.1 -0.05 +0.1 -0.05 0.55?.1 0.7?.1 0.15?.05 0~0.1 0.1min. z absolute maximum ratings (ta=25 c) parameter symbol limits unit power dissipation ? 150 mw junction temperature 150 ?c storage temperature ?c tj tstg ? 55~ + 150 p ? total of 2 elements z electrical characteristics (ta=25 c) parameter symbol min. typ. max. unit conditions zener voltage v z 6.47 7.14 v i z =5ma reverse current i r ?? 0.5 v r =3.5v operating resistance capacitance between terminals z z c t ? ? ? ? 40 9 ? i z =5ma f=1mh z , v r =5v a ? pf
emz6.8n diodes z others item device configuration judgment contents standard1 charge/discharge capacitance : 200pf 10% charge/discharge capacitance : 150pf discharge resistance : 400 ? 10% discharge resistance : 330 ? 5 repetitions no spark or smoke emitted : 25kv no element destruction : 20kv no malfunction : 8kv 10 repetitions no malfunction contact : 8kv suspended : 15kv iec1000-4-2 z electrical characteristic curves (ta=25 c) 5 678 1 10 100 1m 10m 100n zener current : iz (a) zener voltage : vz (v) fig.1 zener voltage characteristic ? 25 c 25 c 75 c 125 c 0.01 0.1 1 10 10 1 100 dynamic impeadance : zz ( ? ) zener current : iz (ma) fig.2 operating resistance zener current characteristic 0 0 25 50 100 150 100 200 300 power dissipation : pd (mw) ambient temperature : ta ( ? c) fig.3 derating curve


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