6mbi 25s-120l 6-pack igbt 1200v 6x25a igbt module ( s-series ) n n features ? npt-technologie ? solderable package ? square sc soa at 10 x i c ? high short circuit withstand-capability ? small temperature dependence of the turn-off switching loss ? low losses and soft switching n n applications ? high power switching ? a.c. motor controls ? d.c. motor controls ? uninterruptible power supply n n outline drawing n n maximum ratings and characteristics n n equivalent circuit ? absolute maximum ratings ( t c =25c ) items symbols ratings units collector-emitter voltage v ces 1200 v gate -emitter voltage v ges 20 v continuous i c 35 / 25 collector 1ms i c pulse 70 / 50 current (25c / 80c) continuous -i c 35 / 25 1ms -i c pulse 70 / 50 max. power dissipation p c 200 w operating temperature t j +150 c storage temperature t stg -40 ~ +125 c isolation voltage a.c. 1min. v is 2500 v screw torque mounting *1 3.5 nm note: *1:recommendable value; 2.5 ~ 3.5 nm (m5) ? electrical characteristics ( at t j =25c ) items symbols test conditions min. typ. max. units zero gate voltage collector current i ces v ge =0v v ce =1200v 1.0 ma gate-emitter leackage current i ges v ce =0v v ge = 20v 200 a gate-emitter threshold voltage v ge(th) v ge =20v i c =25ma 6.0 9.0 v collector-emitter saturation voltage v ce(sat) v ge =15v i c =25a 2.1 v input capacitance c ies v ge =0v 3300 output capacitance c oes v ce =10v pf reverse transfer capacitance c res f=1mhz t on v cc =600v 0.60 1.2 t r i c =25a 0.40 0.6 t off v ge = 15v 0.45 1.0 t f r g =51 w 0.10 0.3 diode forward on-voltage v f i f =25a v ge =0v 3.3 v reverse recovery time t rr i f =25a 350 ns ? thermal characteristics items symbols test conditions min. typ. max. units r th(j-c) igbt 0.62 thermal resistance r th(j-c) diode 1.00 c/w r th(c-f) with thermal compound 0.05 turn-on time turn-off time s a
for more information, contact: collmer semiconductor, inc. p.o. box 702708 dallas, tx 75370 972-233-1589 972-233-0481 fax http://www.collmer.com
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