glass passivated plastic rectifier safe ir series 30DPS.. 1 bulletin i2103 rev. b 07/97 i f(av) = 30 amp i fsm = 300 amp v rrm up to 1200v 150 c t j operation glass passivated chip junction low forward voltage drop high current capabilities high surge current capabilities smd series available i f(av) sinusoidal waveform v rrm 800 to 1200 v i fsm 300 a v fm @ 30 a pk , t j = 25c 1.15 v t j - 40 to 150 c characteristics 30DPS.. units 30 a major ratings and characteristics to-247ac description/features the 30DPS rectifier safe ir series has been optimized for very low forward voltage drop, with moderate leakage. the glass passivation technology used has reliable opera- tion up to 150 c junction temperature. typical applications are in input rectification. package outline
2 30DPS.. safe ir series bulletin i2103 rev. b 07/97 type number voltage ratings v rrm , maximum v rsm , maximum i rrm code peak reverse voltage peak reverse voltage 150c -v vma 30DPS.. 08 800 900 1 12 1200 1300 i f(av) max. average forward current 30 a @ t c = 90 c, 180 conduction half sine wave i fsm max. peak one cycle non-repetitive 250 a 10ms sine pulse, rated v rrm applied surge current per junction 300 10ms sine pulse, no voltage reapplied i 2 t max. i 2 t for fusing 316 a 2 s 10ms sine pulse, rated v rrm applied 442 10ms sine pulse, no voltage reapplied i 2 ? t max. i 2 ? t for fusing 4420 a 2 ? s t = 0.1 to 10ms, no voltage reapplied absolute maximum ratings parameters 30DPS.. units conditions v fm max. forward voltage drop 1.15 v @ 30a, t j = 25c r t forward slope resistance 9.28 m w v f(to) threshold voltage 0.78 v i rm max. reverse leakage current 0.1 ma t j = 25 c v r = rated v rrm 1.0 t j = 150 c electrical specifications parameters 30DPS.. units conditions t j = 150c t j max. junction temperature range - 40 to 150 c t stg max. storage temperature range - 40 to 150 c r thjc max. thermal resistance junction 40 c/w to ambient r thja max. thermal resistance junction 0.95 c/w dc operation, per junction to case r thcs typical thermal resistance, case to 0.2 c/w mounting surface , smooth and greased heatsink wt approximate weight 6 (0.21) g (oz.) t mounting torque min. 6 (5) max. 12 (10) case style to-247ac jedec thermal-mechanical specifications parameters 30DPS.. units conditions kg-cm (ibf-in) provide terminals coating for voltages above 1200v
3 30DPS.. safe ir series bulletin i2103 rev. b 07/97 fig. 1 - current rating characteristics (per junction) fig. 2 - current rating characteristics (per junction) fig. 3 - forward power loss characteristics (per junction) 0 20 40 60 80 100 120 140 0 1020304050 total output current (a) maximu m total power loss (w) 180 (sine) 180 (rect) 30DPS.. series single phase bridge connected t = 150c j 0 20 40 60 80 100 120 140 0 1020304050 total output current (a) maximum total power loss (w) 120 (rect) 30DPS.. series th ree ph ase bridge conn ected t = 150c j 80 90 100 110 120 130 140 150 0 5 10 15 20 25 30 35 30 60 90 120 180 average forward current (a) conduction angle maximum allowable case temperature ( c) 30DPS.. series r (dc) = 1 k/w thj c 80 90 100 110 120 130 140 150 0 1020304050 dc 30 60 90 120 180 conduction period maximum allowable case temperature ( c) average forward current (a) 30DPS.. ser ies r (dc) = 1 k/w thj c fig. 5 - forward power loss characteristics fig. 6 - forward power loss characteristics fig. 4 - forward power loss characteristics (per junction) 0 10 20 30 40 50 0 5 10 15 20 25 30 35 180 120 90 60 30 rms limit conduction angle maximum average forward power loss (w) average forward current (a) 30DPS.. ser ies t = 150c j 0 10 20 30 40 50 60 0 1020304050 dc 180 120 90 60 30 rms limit conduction period maximum average forward power loss (w) average forward current (a) 30DPS.. ser ies t = 150c j
4 30DPS.. safe ir series bulletin i2103 rev. b 07/97 50 100 150 200 250 300 110100 peak half sine wave forward current (a) number of equal amplitude half cycle current pulses (n) in itial t = 150 c @ 60 hz 0.0083 s @ 50 hz 0.0100 s at any rated load condition and with rated v applied follow ing surge. rrm j 30DPS.. ser ies 50 100 150 200 250 300 350 0.01 0.1 1 peak half sine wave forward current (a) in itial t = 150 c no voltage reapplied rated v reapplied pulse train duration (s) rrm versus pulse train duration. maximum non repetitive surge current j 30DPS.. series 0.01 0.1 1 10 0.0001 0.001 0.01 0.1 1 square wave pulse duration (s) thjc tran sien t thermal impedance z (k/w) steady state value (dc operation) d = 0.50 d = 0.33 d = 0.25 d = 0.17 d = 0.08 30DPS.. series single pulse fig. 10 - thermal impedance z thjc characteristics (per junction) fig. 9 - forward voltage drop characteristics (per junction) 1 10 100 1000 00.511.522.53 t = 25 c j instantaneous forward voltage (v) instantaneous forward current (a) t = 150c j 30DPS.. series fig. 7 - maximum non-repetitive surge current (per junction) fig. 8 - maximum non-repetitive surge current (per junction)
5 30DPS.. safe ir series bulletin i2103 rev. b 07/97 30 d p s 12 device code 1 5 24 3 1 - part code 2 - circuit configuration: d = half bridge configuration 3 - package: p = to-247ac 4 - type of silicon: s = silicon recovery rectifier 5 - voltage code: code x 100 = v rrm (see voltage ratings table) 6 ordering information table ordering information table dimensions in millimeters and inches 15.90 (0.626) 15.30 (0.602) 14.20 (0.559) 14.80 (0.583) 3.70 (0.145) 4.30 (0.170) 5.30 (0.208) 5.70 (0.225) 5.50 (0.217) 4.50 (0.177) (2 plcs.) 3.55 (0.139) 3.65 (0.144) 2.20 (0.087) max. 1.00 (0.039) 1.40 (0.056) 3.20 (0.126) max. 0.40 (0.213) 0.80 (0.032) 4.70 (0.185) 5.30 (0.209) 1.5 (0.059) 2.5 (0.098) 2.40 (0.095) max. 5.43 (0.213) 5.47 (0.216) 20.30 (0.800) 19.70 (0.775) 1 2 3 dia. 1 3 2 base common
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