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11/23/10 irfhs8342pbf hexfet power mosfet notes through are on page 2
features and benefits www.irf.com 1 applications ? control mosfet for buck converters ? system/load switch absolute maximum ratin g s parameter units v ds drain-to-source voltage v gs gate-to-source voltage i d @ t a = 25c continuous drain current, v gs @ 10v i d @ t a = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v i d @ t c(bottom) = 70c continuous drain current, v gs @ 10v i d @ t c(bottom) = 25c continuous drain current, v gs @ 10v (package limited) i dm pulsed drain current p d @t a = 25c power dissipation p d @t a = 70c power dissipation linear derating factor w/c t j operating junction and t stg storage temperature range v w a c max. 8.8 15 76 20 30 7.1 19 8.5 -55 to + 150 2.1 0.02 1.3 note form quantit y irfhs8342trpbf pqfn 2mm x 2mm ta p e and reel 4000 IRFHS8342TR2PBF pqfn 2mm x 2mm ta p e and reel 400 orderable part number package type standard pac k 2mm x 2mm pqfn features resultin g benefits low r dson ( 16.0m ) lower conduction losses low thermal resistance to pcb ( 13c/w) enable better thermal dissipation low profile ( 1.0 mm) results in increased power density compatible with existing surface mount techniques easier manufacturin g rohs compliant containing no lead, no bromide and no halogen environmentally friendlier msl1, consumer qualification increased reliability g 3 s d2 d1 4s 5d 6d top view d v ds 30 v v gs max 20 v r ds(on) max (@v gs = 10v) 16.0 m q g(typical) (@v gs = 4.5v) 4.2 nc i d (@t c(bottom) = 25c) 8.5 a

2 www.irf.com d s g repetitive rating; pulse width limited by max. junction temperature. current limited by package. pulse width 400 s; duty cycle 2%. when mounted on 1 inch square copper board r is measured at t j of approximately 90c. th erma l r es i s t ance parameter typ. max. units r jc (bottom) junction-to-case ??? 13 r jc (top) junction-to-case ??? 90 c/w r ja junction-to-ambient ??? 60 r ja junction-to-ambient (<10s) ??? 42 static @ t j = 25c (unless otherwise specified) parameter min. typ. max. units bv dss drain-to-source breakdown voltage 30 ??? ??? v ? v dss / t j breakdown voltage temp. coefficient ??? 22 ??? mv/c r ds(on) static drain-to-source on-resistance ??? 13 16 ??? 20 25 v gs(th) gate threshold voltage 1.35 1.8 2.35 v v gs(th) gate threshold voltage coefficient ??? -5.8 ??? mv/c i dss drain-to-source leakage current ??? ??? 1.0 ??? ??? 150 i gss gate-to-source forward leakage ??? ??? 100 gate-to-source reverse leakage ??? ??? -100 gfs forward transconductance 18 ??? ??? s q g total gate charge ??? 4.2 ??? nc q g total gate charge ??? 8.7 ??? v ds = 15v q gs gate-to-source charge ??? 1.5 ??? q gd gate-to-drain charge ??? 1.3 ??? r g gate resistance ??? 1.9 ??? t d(on) turn-on delay time ??? 5.9 ??? t r rise time ???15??? t d(off) turn-off delay time ??? 5.2 ??? t f fall time ??? 5.0 ??? c iss input capacitance ??? 600 ??? c oss output capacitance ??? 100 ??? c rss reverse transfer capacitance ??? 46 ??? diode characteristics parameter min. typ. max. units i s continuous source current (body diode) i sm pulsed source current ( bod y diode ) v sd diode forward voltage ??? ??? 1.0 v t rr reverse recovery time ??? 11 17 ns q rr reverse recovery charge ??? 13 20 nc t on forward turn-on time time is dominated by parasitic inductance v ds = v gs , i d = 25 a v gs = 4.5v, i d = 6.8a m v dd = 15v, v gs = 4.5v v gs = 4.5v, v ds = 15v, i d = 8.5a r g =1.8 v ds = 10v, i d = 8.5a v ds = 24v, v gs = 0v, t j = 125c a i d = 8.5a (see fig. 6 & 16) i d = 8.5a v gs = 0v v ds = 25v v ds = 24v, v gs = 0v t j = 25c, i f = 8.5a , v dd = 13v di/dt = 330 a/ s t j = 25c, i s = 8.5a , v gs = 0v showing the integral reverse p-n junction diode. conditions see fig.17 ? = 1.0mhz conditions v gs = 0v, i d = 250 a reference to 25c, i d = 1ma v gs = 10v, i d = 8.5a ??? ??? 76 ??? ??? 8.5 mosfet symbol na ns a pf nc v gs = 10v v gs = 20v v gs = -20v

www.irf.com 3 fig 4. normalized on-resistance vs. temperature fig 2. typical output characteristics fig 1. typical output characteristics fig 3. typical transfer characteristics fig 6. typical gate charge vs.gate-to-source voltage fig 5. typical capacitance vs.drain-to-source voltage 0.1 1 10 100 v ds , drain-to-source voltage (v) 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 7.0v 5.0v 4.5v 3.5v 3.3v 2.8v bottom 2.5v 60 s pulse width tj = 150c 2.5v 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) vgs top 10v 7.0v 5.0v 4.5v 3.5v 3.3v 2.8v bottom 2.5v 60 s pulse width tj = 25c 2.5v -60 -40 -20 0 20 40 60 80 100 120 140 160 t j , junction temperature (c) 0.6 0.8 1.0 1.2 1.4 1.6 1.8 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( n o r m a l i z e d ) i d = 8.5a v gs = 10v 2.0 3.0 4.0 5.0 6.0 v gs , gate-to-source voltage (v) 1.0 10 100 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) t j = 25c t j = 150c v ds = 15v 60 s pulse width 1 10 100 v ds , drain-to-source voltage (v) 10 100 1000 10000 c , c a p a c i t a n c e ( p f ) v gs = 0v, f = 1 mhz c iss = c gs + c gd , c ds shorted c rss = c gd c oss = c ds + c gd c oss c rss c iss 024681012 q g total gate charge (nc) 0 2 4 6 8 10 12 14 v g s , g a t e - t o - s o u r c e v o l t a g e ( v ) v ds = 24v v ds = 15v v ds = 6.0v i d = 8.5a

4 www.irf.com fig 11. maximum effective transient thermal impedance, junction-to-case (bottom) fig 8. maximum safe operating area fig 9. maximum drain current vs. case (bottom) temperature fig 7. typical source-drain diode forward voltage fig 10. threshold voltage vs. temperature 1e-006 1e-005 0.0001 0.001 0.01 0.1 1 t 1 , rectangular pulse duration (sec) 0.01 0.1 1 10 100 t h e r m a l r e s p o n s e ( z t h j c ) c / w 0.20 0.10 d = 0.50 0.02 0.01 0.05 single pulse ( thermal response ) notes: 1. duty factor d = t1/t2 2. peak tj = p dm x zthjc + tc 0.3 0.4 0.5 0.6 0.7 0.8 0.9 1.0 1.1 v sd , source-to-drain voltage (v) 0.1 1 10 100 i s d , r e v e r s e d r a i n c u r r e n t ( a ) t j = 25c t j = 150c v gs = 0v -75 -50 -25 0 25 50 75 100 125 150 t j , temperature ( c ) 1.0 1.2 1.4 1.6 1.8 2.0 2.2 v g s ( t h ) , g a t e t h r e s h o l d v o l t a g e ( v ) i d = 25 a 0.1 1 10 100 v ds , drain-to-source voltage (v) 0.1 1 10 100 1000 i d , d r a i n - t o - s o u r c e c u r r e n t ( a ) tc = 25c tj = 150c single pulse 1msec 10msec operation in this area limited by r ds (on) 100 sec dc limited by wire bond 25 50 75 100 125 150 t c , case temperature (c) 0 4 8 12 16 20 i d , d r a i n c u r r e n t ( a ) limited by package

www.irf.com 5 fig 13. typical on-resistance vs. drain current fig 12. on-resistance vs. gate voltage fig 14. typical power vs. time fig 15. for n-channel hexfet power mosfets

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p.w. period di/dt diode recovery dv/dt ripple 5% body diode forward drop re-applied voltage reverse recovery current body diode forward current v gs =10v v dd i sd driver gate drive d.u.t. i sd waveform d.u.t. v ds waveform inductor curent d = p. w . period
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1e-5 1e-4 1e-3 1e-2 1e-1 1e+0 time (sec) 0 100 200 300 400 500 600 s i n g l e p u l s e p o w e r ( w ) 0 5 10 15 20 v gs, gate -to -source voltage (v) 5 10 15 20 25 30 35 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) i d = 8.5a t j = 125c t j = 25c 0 10 20 30 40 50 60 70 i d , drain current (a) 5 10 15 20 25 30 r d s ( o n ) , d r a i n - t o - s o u r c e o n r e s i s t a n c e ( m ) vgs = 4.5v vgs = 10v

6 www.irf.com fig 17a. switching time test circuit fig 17b. switching time waveforms v gs v ds 90% 10% t d(on) t d(off) t r t f fig 16a. gate charge test circuit fig 16b. gate charge waveform vds vgs id vgs(th) qgs1 qgs2 qgd qgodr 1k vcc dut 0 l s '( 1 ) $
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www.irf.com 7 pqfn 2x2 outline package details http://www.irf.com/technical-info/appnotes/an-1154.pdf note: for the most current drawing please refer to ir website at: http://www.irf.com/package/ pqfn 2x2 outline part marking

8 www.irf.com pqfn 2x2 outline tape and reel

www.irf.com 9 qualification standards can be found at international rectifier?s web site http://www.irf.com/product-info/reliability higher qualification ratings may be available should the user have such requirements. please contact your international rectifier sales representative for further information: http://www.irf.com/whoto-call/salesrep/ applicable version of jedec standard at the time of product release. ir world headquarters: 233 kansas st., el segundo, california 90245, usa tel: (310) 252-7105 tac fax: (310) 252-7903 visit us at www.irf.com for sales contact information . 11/2010 data and specifications subject to change without notice. ms l 1 (per jede c j-s t d-020d ??? ) rohs compliant yes pqfn 2mm x 2mm qualification information ? moisture sensitivity level qualification level cons umer ?? (per jede c je s d47f ??? guidelines )

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