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july 2010 doc id 17432 rev 1 1/18 18 stb28nm50n, stf28nm50n stp28nm50n, STW28NM50N n-channel 500 v, 0.135 ? , 21 a d 2 pak, to-220, to-220fp, to-247 mdmesh? ii power mosfet features 100% avalanche tested low input capacitance and gate charge low gate input resistance application switching applications description these devices are made using the second generation of mdmesh tm technology. this revolutionary power mosfet associates a new vertical structure to the company?s strip layout to yield one of the world?s lowest on-resistance and gate charge. it is therefore suitable for the most demanding high efficiency converters. figure 1. internal schematic diagram type v dss (@tjmax) r ds(on) max i d stb28nm50n 550 v < 0.158 ? 21 a stf28nm50n stp28nm50n STW28NM50N 1 2 3 1 2 3 to-220fp to-220 1 3 d2pak 1 2 3 to-247 table 1. device summary order codes marking package packaging stb28nm50n 28nm50n d2pak tape and reel stf28nm50n to-220fp tu b e stp28nm50n to-220 STW28NM50N to-247 www.st.com
contents stb28nm50n, stf28nm50n, stp28nm50n, STW28NM50N 2/18 doc id 17432 rev 1 contents 1 electrical ratings . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3 2 electrical characteristics . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 5 2.1 electrical characteristics (curves) . . . . . . . . . . . . . . . . . . . . . . . . . . . . 7 3 test circuits . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10 4 package mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 11 5 packaging mechanical data . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16 6 revision history . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
stb28nm50n, stf28nm50n, stp28nm50n, STW28NM50N electrical ratings doc id 17432 rev 1 3/18 1 electrical ratings table 2. absolute maximum ratings symbol parameter value unit to-220 d2pak to-220fp to-247 v ds drain-source voltage (v gs = 0) 500 v v gs gate- source voltage 25 v i d drain current (continuous) at t c = 25 c 21 21 (1) 1. limited only by maximu m temperature allowed 21 a i d drain current (continuous) at t c = 100 c 13 13 (1) 13 a i dm (2) 2. pulse width limited by safe operating area drain current (pulsed) 84 84 (1) 84 a p tot total dissipation at t c = 25 c 90 25 150 w v iso insulation withstand voltage (rms) from all three leads to external heat sink (t=1 s;t c =25 c) 2500 v dv/dt (3) 3. i sd 21 a, di/dt 400 a/s, v dd = 80% v (br)dss peak diode recovery voltage slope 21 v/ns t stg storage temperature - 55 to 150 c t j max. operating junction temperature 150 c table 3. thermal data symbol parameter value unit to-220 d2pak to-247 to-220fp r thj-case thermal resistance junction-case max 1.39 0.83 5 c/w r thj-amb thermal resistance junction-ambient max 62.5 50 62.5 c/w r thj-pcb (1) 1. when mounted on 1inch2 fr-4 board, 2 oz cu thermal resistance junction-pcb max 30 c/w t l maximum lead temperature for soldering purpose 300 300 c
electrical ratings stb28nm50n, stf2 8nm50n, stp28nm50n, STW28NM50N 4/18 doc id 17432 rev 1 table 4. avalanche characteristics symbol parameter value unit i ar avalanche current, repetitive or not-repetitive (pulse width limited by tj max) 8.5 a e as single pulse avalanche energy (starting tj = 25 c, i d = i ar , v dd = 50 v) 430 mj
stb28nm50n, stf28nm50n, stp28nm50n, STW28NM50N electrical characteristics doc id 17432 rev 1 5/18 2 electrical characteristics (t case =25c unless otherwise specified) table 5. on/off states symbol parameter test conditions min. typ. max. unit v (br)dss drain-source breakdown voltage i d = 1 ma, v gs = 0 500 v i dss zero gate voltage drain current (v gs = 0) v ds = max rating v ds = max rating, @125 c 1 10 a a i gss gate-body leakage current (v ds = 0) v gs = 20 v 100 na v gs(th) gate threshold voltage v ds = v gs , i d = 250 a 2 3 4 v r ds(on) static drain-source on resistance v gs = 10 v, i d = 10.5 a 0.135 0.158 ? table 6. dynamic symbol parameter test conditions min. typ. max. unit c iss c oss c rss input capacitance output capacitance reverse transfer capacitance v ds = 25 v, f = 1 mhz, v gs = 0 - 1735 122 4.3 - pf pf pf c oss(tr) (1) 1. c oss(tr) is a constant capacitance value that gives the same charging time as c oss while v ds is rising from 0 to 80% v dss . equivalent output capacitance time related v gs = 0, v ds = 0 to 50 v - 122 - pf c oss(er) (2) 2. c oss(er) is a constant capacitance value that gives the same stored energy as c oss while v ds is rising from 0 to 80% v dss . equivalent output capacitance energy related -86 - q g q gs q gd total gate charge gate-source charge gate-drain charge v dd = 400 v, i d = 21 a, v gs = 10 v, (see figure 18 ) - 50 9.5 25 - nc nc nc r g gate input resistance f=1 mhz gate dc bias=0 test signal level=20 mv open drain -2.7 - ?
electrical characteristics stb28nm50n, stf28nm50n, stp28nm50n, STW28NM50N 6/18 doc id 17432 rev 1 table 7. switching times symbol parameter test conditions min. typ. max. unit t d(on) t r t d(off) t f turn-on delay time rise time turn-off delay time fall time v dd = 250 v, i d = 10.5 a r g =4.7 ? v gs = 10 v (see figure 17 ) - 13.6 19 62 52 - ns ns ns ns table 8. source drain diode symbol parameter test conditions min. typ. max. unit i sd i sdm (1) 1. pulse width limited by safe operating area source-drain current source-drain current (pulsed) - 21 84 a a v sd (2) 2. pulsed: pulse duration = 300 s, duty cycle 1.5% forward on voltage i sd = 21 a, v gs = 0 - 1.5 v t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 21 a, di/dt = 100 a/s v dd = 400 v (see figure 22 ) - 326 5 30 ns c a t rr q rr i rrm reverse recovery time reverse recovery charge reverse recovery current i sd = 21 a, di/dt = 100 a/s v dd = 400 v, t j = 150 c (see figure 22 ) - 376 6.2 33.2 ns c a
stb28nm50n, stf28nm50n, stp28nm50n, STW28NM50N electrical characteristics doc id 17432 rev 1 7/18 2.1 electrical characteristics (curves) figure 2. safe operating area for to-220, d2pak figure 3. thermal impedance for to-220, d2pak figure 4. safe operating area for to-220fp figure 5. thermal impedance for to-220fp figure 6. safe operating area for to-247 figure 7. thermal impedance for to-247 ) $ 6 $3 6 ! /perationinthisareais ,imitedbymax2 $3on ?s ?s ms ms 4j?# 4c?# 3ingle pulse !-v ) $ 6 $3 6 ! /perationinthisareais ,imitedbymax2 $3on ?s ?s ms ms 4j?# 4c?# 3ingle pulse !-v ) $ 6 $3 6 ! /perationinthisareais ,imitedbymax2 $3on ?s ?s ms ms 4j?# 4c?# 3ingle pulse !-v
electrical characteristics stb28nm50n, stf28nm50n, stp28nm50n, STW28NM50N 8/18 doc id 17432 rev 1 figure 8. output characteristics figure 9. transfer characteristics figure 10. gate charge vs gate-source voltage figure 11. static drain-source on resistance figure 12. capacitance variations figure 13. output capacitance stored energy ) $ 6 $3 6 ! 6 6 6 '3 6 !-v ) $ 6 '3 6 ! 6 $3 6 !-v 6 '3 1 g n# 6 6 $$ 6 ) $ ! 6 $3 6 '3 !-v 2 $3on ) $ ! /hm 6 '3 6 !-v # 6 $3 6 p& #iss #oss #rss !-v % oss 6 $3 6 ?* !-v
stb28nm50n, stf28nm50n, stp28nm50n, STW28NM50N electrical characteristics doc id 17432 rev 1 9/18 figure 14. normalized gate threshold voltage vs temperature figure 15. normalized on resistance vs temperature figure 16. normalized b vdss vs temperature 6 '3th 4 * ?# norm !-v 2 $3on 4 * ?# norm !-v "6 $33 4 * ?# norm !-v
test circuits stb28nm50n, stf2 8nm50n, stp28nm50n, STW28NM50N 10/18 doc id 17432 rev 1 3 test circuits figure 17. switching times test circuit for resistive load figure 18. gate charge test circuit figure 19. test circuit for inductive load switching and diode recovery times figure 20. unclamped inductive load test circuit figure 21. unclamped inductive waveform figure 22. switching time waveform am0146 8 v1 v g s p w v d r g r l d.u.t. 2200 f 3 . 3 f v dd am01469v1 v dd 47k ? 1k ? 47k ? 2.7k ? 1k ? 12v v i =20v=v gmax 2200 f p w i g =con s t 100 ? 100nf d.u.t. v g am01470v1 a d d.u.t. s b g 25 ? a a b b r g g fa s t diode d s l=100 h f 3 . 3 1000 f v dd am01471v1 v i p w v d i d d.u.t. l 2200 f 3 . 3 f v dd am01472v1 v (br)d ss v dd v dd v d i dm i d am0147 3 v1 v d s t on td on td off t off t f t r 90 % 10 % 10 % 0 0 90 % 90 % 10 % v g s
stb28nm50n, stf28nm50n, stp28nm50n, STW28NM50N package mechanical data doc id 17432 rev 1 11/18 4 package mechanical data in order to meet environmental requirements, st offers these devices in different grades of ecopack ? packages, depending on their level of environmental compliance. ecopack ? specifications, grade definitions and product status are available at: www.st.com. ecopack is an st trademark.
package mechanical data stb28nm50n, stf28nm50n, stp28nm50n, STW28NM50N 12/18 doc id 17432 rev 1 figure 23. to-220fp drawing table 9. to-220fp mechanical data dim. mm min. typ. max. a4.4 4.6 b2.5 2.7 d 2.5 2.75 e0.45 0.7 f0.75 1 f1 1.15 1.70 f2 1.15 1.70 g4.95 5.2 g1 2.4 2.7 h 10 10.4 l2 16 l3 28.6 30.6 l4 9.8 10.6 l5 2.9 3.6 l6 15.9 16.4 l7 9 9.3 dia 3 3.2 7012510_rev_k a b h di a l7 d e l6 l5 l2 l 3 l4 f1 f2 f g g1
stb28nm50n, stf28nm50n, stp28nm50n, STW28NM50N package mechanical data doc id 17432 rev 1 13/18 to-220 type a mechanical data dim mm min typ max a 4.40 4.60 b 0.61 0. 88 b 1 1.14 1.70 c0.4 8 0.70 d 15.25 15.75 d1 1.27 e10 10.40 e 2.40 2.70 e1 4. 9 5 5.15 f1.2 3 1. 3 2 h1 6.20 6.60 j1 2.40 2.72 l1 3 14 l1 3 .50 3 . 93 l20 16.40 l 3 02 8 . 9 0 ? p 3 .75 3 . 8 5 q 2.65 2. 9 5 0015988_rev_s
package mechanical data stb28nm50n, stf28nm50n, stp28nm50n, STW28NM50N 14/18 doc id 17432 rev 1 dim. mm. min. typ. max. a4. 8 55.15 a1 2.20 2.60 b 1.0 1.40 b 1 2.0 2.40 b 2 3 .0 3 .40 c0.40 0. 8 0 d1 9 . 8 5 20.15 e 15.45 15.75 e5.45 l 14.20 14. 8 0 l1 3 .70 4. 3 0 l2 1 8 .50 ?p 3 .55 3 .65 ?r 4.50 5.50 s 5.50 to-247 mechanical data
stb28nm50n, stf28nm50n, stp28nm50n, STW28NM50N package mechanical data doc id 17432 rev 1 15/18 d2pak (to-263) mechanical data dim h c n i m m min typ max min typ max 1 8 1 . 0 3 7 1 . 0 0 6 . 4 0 4 . 4 a 9 0 0 . 0 1 0 0 . 0 3 2 . 0 3 0 . 0 1 a 7 3 0 . 0 7 2 0 . 0 3 9 . 0 0 7 . 0 b 7 6 0 . 0 5 4 0 . 0 0 7 . 1 4 1 . 1 2 b 4 2 0 . 0 7 1 0 . 0 0 6 . 0 5 4 . 0 c 3 5 0 . 0 8 4 0 . 0 6 3 . 1 3 2 . 1 2 c 8 6 3 . 0 2 5 3 . 0 5 3 . 9 5 9 . 8 d 5 9 2 . 0 0 5 . 7 1 d 9 0 4 . 0 4 9 3 . 0 0 4 . 0 1 0 1 e 4 3 3 . 0 0 5 . 8 1 e 1 . 0 4 5 . 2 e 8 0 2 . 0 2 9 1 . 0 8 2 . 5 8 8 . 4 1 e 4 2 6 . 0 0 9 5 . 0 5 8 . 5 1 5 1 h 6 0 1 . 0 9 9 0 . 0 9 6 . 2 9 4 . 2 1 j 0 1 1 . 0 0 9 0 . 0 9 7 . 2 9 2 . 2 l 5 5 0 . 0 5 0 . 0 0 4 . 1 7 2 . 1 1 l 9 6 0 . 0 1 5 0 . 0 5 7 . 1 0 3 . 1 2 l 6 1 0 . 0 4 . 0 r 8 0 8 0 2 v 0079457_m
packaging mechanical data stb28nm50n, stf28nm50n, stp28nm50n, STW28NM50N 16/18 doc id 17432 rev 1 5 packaging mechanical data tape and reel shipment d 2 pak footprint dim. mm inch min. max. min. max. a 33 0 12.992 b 1.5 0.059 c12. 8 1 3 .2 0.504 0.520 d 20.2 0795 g 24.4 26.4 0.960 1.0 3 9 n 100 3 .9 3 7 t 3 0.4 1.197 base qty bulk qty 1000 1000 reel mechanical data dim. mm inch min. max. min. max. a0 10.5 10.7 0.41 3 0.421 b0 15.7 15.9 0.61 8 0.626 d 1.5 1.6 0.059 0.06 3 d1 1.59 1.61 0.062 0.06 3 e1.651. 8 5 0.065 0.07 3 f 11.4 11.6 0.449 0.456 k0 4. 8 5.0 0.1 8 9 0.197 p0 3 .9 4.1 0.15 3 0.161 p1 11.9 12.1 0.46 8 0.476 p2 1.9 2.1 0.075 0.0 8 2 r 50 1.574 t0.250. 3 5 0.009 8 0.01 3 7 w 2 3 .7 24. 3 0.9 33 0.956 tape mechanical data
stb28nm50n, stf28nm50n, stp28nm5 0n, STW28NM50N revision history doc id 17432 rev 1 17/18 6 revision history table 10. document revision history date revision changes 19-jul-2010 1 first release.
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