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| product specification www.jmnic.com 1 silicon npn power transistor 2SC3834 description ? low collector saturation voltage : v ce(sat) = 0.5v(max)@ i c =3a ? collector-emitter breakdown voltage- : v (br)ceo = 120v (min) ? good linearity of h fe applications ? designed for use in humidifier , dc/dc converter and general purpose applications absolute maximum ratings(t a =25 ?? ) symbol parameter value unit v cbo collector-base voltage 200 v v ceo collector-emitter voltage 120 v v ebo emitter-base voltage 8 v i c collector current-continuous 7 a i cm collector current-pulse 14 a i b base current-continuous 3 a p c collector power dissipation @ t c =25 ?? 50 w t j junction temperature 150 ?? t stg storage temperature range -55~150 ??
product specification www.jmnic.com 2 silicon npn power transistor 2SC3834 electrical characteristics t c =25 ?? unless otherwise specified symbol parameter conditions min typ. max unit v (br)ceo collector-emitter breakdown voltage i c = 50ma ; i b = 0 120 v v ce(sat) collector-emitter saturation voltage i c = 3a; i b = 0.3a 0.5 v v be(sat) base-emitter saturation voltage i c = 3a; i b = 0.3a 1.2 v i cbo collector cutoff current v cb = 200v; i e = 0 100 | a i ebo emitter cutoff current v eb = 8v; i c = 0 100 | a h fe dc current gain i c = 3a ; v ce = 4v 70 220 f t current-gain?bandwidth product i e = -0.5a ; v ce = 12v 30 mhz c ob output capacitance i e = 0 ; v cb = 10v;f test = 1.0mhz 110 pf switching times t on turn-on time 0.5 | s t stg storage time 3.0 | s t f fall time i c = 3a ;i b1 =0.3a; i b2 = -0.6a r l = 16.7 |? ; v cc = 50v 0.5 | s ? h fe classifications o y g 70-120 100-200 160-220 product specification www.jmnic.com 3 silicon npn power transistor 2SC3834 |
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