advanced power n and p-channel enhancemen t electronics corp. mode power mosfet simple drive requirement n-ch bv dss 20v low on-resistance r ds(on) 3 0 m fast switching i d 6a p-ch bv dss -20v r ds(on) 5 0 m description i d -5a absolute maximum ratings symbol parameter rating units n-channel p-channel v ds drain-source voltage -20 v v gs gate-source voltage 12 v i d @t a =25 continuous drain current 3 -5 a i d @t a =70 continuous drain current 3 -4 a i dm pulsed drain current 1 -20 a p d @t a =25 total power dissipation 2.0 w linear derating factor 0.016 w/ t stg storage temperature range -55 to 150 t j operating junction temperature range -55 to 150 symbol value unit rthj-a thermal resistance junction-ambient 3 max. 62.5 /w data and specifications subject to change without notice ap4500GM pb free plating product 12 20 parameter 200609031 thermal data 20 4.8 6 the advanced power mosfets from apec provide the designer with the best combination of fast switching, ruggedized device design, low on-resistance and cost- effectiveness. the so-8 package is universally preferred for all commercial- industrial surface mount applications and suited for low voltage applications such as dc/dc converters. g2 d2 s2 g1 d1 s1 s1 g1 s2 g2 d1 d1 d2 d2 so-8 www..net
n-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua 20 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =1ma - 0.037 -v/ r ds(on) static drain-source on-resistance 2 v gs =4.5v, i d =6a - - 30 m v gs =2.5v, i d =5.2a - - 45 m v gs(th) gate threshold voltage v ds =v gs , i d =250ua 0.5 - 1.2 v g fs forward transconductance v ds =10v, i d =6a - 18.5 - s i dss drain-source leakage current (t j =25 o c) v ds =20v, v gs =0v - - 1 ua drain-source leakage current (t j =70 o c) v ds =16v, v gs =0v - - 25 ua i gss gate-source leakage v gs =12v - - na q g total gate charge 2 i d =6a - 9 15 nc q gs gate-source charge v ds =10v - 1.8 - nc q gd gate-drain ("miller") charge v gs =4.5v - 4.2 - nc t d(on) turn-on delay time 2 v ds =10v - 29 - ns t r rise time i d =1a - 65 - ns t d(off) turn-off delay time r g =6 , v gs =4.5v - 60 - ns t f fall time r d =10 -50- ns c iss input capacitance v gs =0v - 300 480 pf c oss output capacitance v ds =8v - 255 - pf c rss reverse transfer capacitance f=1.0mhz - 115 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =1.7a, v gs =0v - - 1.2 v t rr reverse recovery time i s =6a, v gs =0v, - 26 - ns q rr reverse recovery charge di/dt=100a/s - 17 - nc ap4500GM 100 www..net
ap4500GM p-ch electrical characteristics@t j =25 o c(unless otherwise specified) symbol parameter test conditions min. typ. max. units bv dss drain-source breakdown voltage v gs =0v, i d =250ua -20 - - v b v dss / t j breakdown voltage temperature coefficient reference to 25 , i d =-1ma - -0.037 -v/ r ds(on) static drain-source on-resistance 2 v gs =-4.5v, i d =-2.2a - - 50 m v gs =-2.5v, i d =-1.8a - - 90 m v gs(th) gate threshold voltage v ds =v gs , i d =-250ua -0.5 - -1 v g fs forward transconductance v ds =-10v, i d =-2.2a - 2.5 - s i dss drain-source leakage current (t j =25 o c) v ds =-20v, v gs =0v - - -1 ua drain-source leakage current (t j =70 o c) v ds =-16v, v gs =0v - - -25 ua i gss gate-source leakage v gs =-- na q g total gate charge 2 i d =-5a - 14 20 nc q gs gate-source charge v ds =-16v - 2 - nc q gd gate-drain ("miller") charge v gs =-4.5v - 5.6 - nc t d(on) turn-on delay time 2 v ds =-10v - 10 - ns t r rise time i d =-2.2a - 11 - ns t d(off) turn-off delay time r g =6 , v gs =-10v - 58 - ns t f fall time r d =4.5 -38- ns c iss input capacitance v gs =0v - 940 1500 pf c oss output capacitance v ds =-20v - 400 - pf c rss reverse transfer capacitance f=1.0mhz - 160 - pf source-drain diode symbol parameter test conditions min. typ. max. units v sd forward on voltage 2 i s =-1.8a, v gs =0v - - -1.2 v t rr reverse recovery time i s =-2.2a, v gs =0v, - 25 - ns q rr reverse recovery charge di/dt=100a/s - 21 - nc notes: 1.pulse width limited by max. junction temperature. 2.pulse width < 300us , duty cycle < 2%. 3.surface mounted on 1 in 2 copper pad of fr4 board ; 135 /w when mounted on min. copper pad. 12v 100 www..net
n-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature ap4500GM 0 5 10 15 20 25 012345 v ds , drain-to-source voltage (v) i d , drain current (a) 4.5v 3.5v 3.0v 2.5v v gs =2.0v t a =25 o c 0 5 10 15 20 25 012345 v ds , drain-to-source voltage (v) i d , drain current (a) 4.5v 3.5v 3.0v 2.5v v gs =2.0v t a =150 o c 20 25 30 35 40 45 2345 v gs (v) r ds(on) (m ) i d =6a t a =25 o c 0.6 0.8 1.0 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) i d =6a v gs =4.5v 0.01 0.10 1.00 10.00 100.00 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 v sd (v) i s (a) t j =25 o c t j =150 o c 0 0.5 1 1.5 -50 0 50 100 150 t j ,junction temperature ( o c) v gs(th) (v) www..net
ap4500GM n-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig9. maximum safe operating area fig 10. effective transient thermal impedance fig 11. switching time waveform fig 12. gate charge waveform 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0.01 0.1 1 10 100 0.1 1 10 100 v ds (v) i d (a) t a =25 o c single pulse 1ms 10ms 100ms 1s 10s dc 0 1 2 3 4 5 6 024681012 q g , total gate charge (nc) v gs , gate to source voltage (v) i d =6a v ds =10v 10 100 1000 1 5 9 1317212529 v ds (v) c (pf) f =1.0mhz ciss coss crss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g 4.5v q gs q gd q g charge www..net
p-channel fig 1. typical output characteristics fig 2. typical output characteristics fig 3. on-resistance v.s. gate voltage fig 4. normalized on-resistance v.s. junction temperature fig 5. forward characteristic of fig 6. gate threshold voltage v.s. reverse diode junction temperature ap4500GM 0.6 0.8 1 1.2 1.4 1.6 1.8 -50 0 50 100 150 t j , junction temperature ( o c) normalized r ds(on) v gs = -4.5v i d =-2.2a 0 5 10 15 20 25 012345 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =25 o c 4.5v 4.0v 3.5v 3.0v v gs =2. 5 v 0 5 10 15 20 25 012345 -v ds , drain-to-source voltage (v) -i d , drain current (a) t a =150 o c 4.5v 4.0v 3.5v 3.0v v gs =2. 5 v 30 40 50 60 70 80 90 100 2345 -v gs (v) r ds(on) (m ) i d =-2.2a t a =25 0.01 0.10 1.00 10.00 100.00 0.1 0.3 0.5 0.7 0.9 1.1 1.3 1.5 -v sd (v) -i s (a) t j =25 o c t j =150 o c 0 0.2 0.4 0.6 0.8 1 -50 0 50 100 150 t j ,junction temperature ( o c) -v gs(th) (v) www..net
ap4500GM p-channel fig 7. gate charge characteristics fig 8. typical capacitance characteristics fig9. maximum safe operating area fi g 10. effective transient thermal impedanc e fig 11. switching time waveform fig 12. gate charge waveform 0.001 0.01 0.1 1 0.0001 0.001 0.01 0.1 1 10 100 1000 t , pulse width (s) normalized thermal response (r thja ) p dm duty factor = t/t peak t j = p dm x r thja + t a r thja =135 o c/w t t 0.02 0.01 0.05 0.1 0.2 duty factor = 0.5 single pulse 0.01 0.1 1 10 100 0.1 1 10 100 -v ds (v) -i d (a) t a =25 o c s in g le pulse 1ms 10ms 100ms 1s 10s dc 0 1 2 3 4 5 6 048121620 q g , total gate charge (nc) -v gs , gate to source voltage (v) i d =-5a v ds =-16v 10 100 1000 10000 1 5 9 13 17 21 25 29 -v ds (v) c (pf) f =1.0mhz ciss coss crss t d(on) t r t d(off) t f v ds v gs 10% 90% q v g -4.5v q gs q gd q g charge www..net
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