a d v a n c e d s e m i c o n d u c t o r, i n c. rev. a 7525 ethel avenue north hollywood, ca 91605 (818) 982 - 1200 fax (818) 765 - 3004 1/1 specifications are subject to change without notice. characteristics t c = 25 o c symbol none test conditions minimum typical maximum units bv cbo i c = 50 ma 65 v bv ces i c = 50 ma 65 v bv ebo i e = 10 ma 3.5 v i ces v ce = 30 v 15 ma h fe v ce = 5.0 v i c = 5.0 a 20 200 --- p g h h c v ce = 40 v p in = 54 w f = 425 mhz 9.7 50 db % npn silicon rf power transistor description: the is designed for features: input matching network omnigold ? metalization system maximum ratings i c 43.2 a v cbo 65 v v ces 65 v v ebo 3.5 v p diss 1167 w @ t c = 25 o c t j - 65 o c to +200 o c t stg - 65 o c to +200 o c q q jc 0.15 o c/w pac kage style .400 bal flg(a) order code: asi10687 minimum inches / mm .045 / 1.14 .380 / 9.65 .125 / 3.18 .210 / 5.33 .070 / 1.78 b c d e f g a maximum .135 / 3.43 .230 / 5.84 .080 / 2.03 .390 / 9.91 inches / mm h .420 / 10.67 .430 / 10.92 dim k l i j .895 / 22.73 .058 / 1.47 .905 / 22.99 .065 / 1.65 p n m .395 / 10.03 .115 / 2.92 .405 / 10.29 .130 / 3.30 .002 / 0.05 .006 / 0.15 .230 / 5.84 k j i h m l n e c d b g f p full r a 4x.060 r .770 / 19.56 .830 / 21.08 .215 / 5.46 .235 / 5.97 .055 / 1.40 .645 / 16.38 .655 / 16.64
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