power transistors 1 2sd2137, 2sd2137a 2sd2137, 2sd2137a 2sd2137, 2sd2137a 2sd2137, 2sd2137a 2sd2137, 2sd2137a silicon npn triple diffusion planar type for power amplification complementary to 2sb1417 and 2sb1417a features ? high forward current transfer ratio h fe which has satisfactory linearity ? low collector to emitter saturation voltage v ce(sat) ? allowing supply with the radial taping absolute maximum ratings t c = 25 c 1: emitter 2: collector 3: base mt-4 (mt4 type package) unit: mm note) * : rank classification rank q r h fe1 70 to 150 120 to 250 parameter symbol rating unit collector to base 2sd2137 v cbo 60 v voltage 2sd2137a 80 collector to 2sd2137 v ceo 60 v emitter voltage 2sd2137a 80 emitter to base voltage v ebo 6v peak collector current i cp 5a collector current i c 3a collector power t c = 25 cp c 15 w dissipation t a = 25 c2 junction temperature t j 150 c storage temperature t stg ? 55 to + 150 c electrical characteristics t c = 25 c parameter symbol conditions min typ max unit collector cutoff 2sd2137 i ces v ce = 60 v, v be = 0 100 a current 2sd2137a v ce = 80 v, v be = 0 100 collector cutoff 2sd2137 i ceo v ce = 30 v, i b = 0 100 a current 2sd2137a v ce = 60 v, i b = 0 100 emitter cutoff current i ebo v eb = 6 v, i c = 0 100 a collector to emitter 2sd2137 v ceo i c = 30 ma, i b = 0 60 v voltage 2sd2137a 80 forward current transfer ratio h fe1 * v ce = 4 v, i c = 1 a 70 250 h fe2 v ce = 4 v, i c = 3 a 10 base to emitter voltage v be v ce = 4 v, i c = 3 a 1.8 v collector to emitter saturation voltage v ce(sat) i c = 3 a, i b = 0.375 a 1.2 v transition frequency f t v ce = 5 v, i c = 0.2 a, f = 10 mhz 30 mhz turn-on time t on i c = 1 a, i b1 = 0.1 a, i b2 = ? 0.1 a, 0.3 s storage time t stg v cc = 50 v 2.5 s fall time t f 0.2 s 10.0 ?.2 0.65 ?.1 0.35 ?.1 2.5 ?.2 123 0.65 ?.1 1.2 ?.1 1.48 ?.2 2.25 ?.2 c 1.0 0.55 ?.1 0.55 ?.1 2.5 ?.2 1.05 ?.1 13.0 ?.2 4.2 ?.2 18.0 ?.5 solder dip 5.0 ?.1 2.5 ?.1 90? 1.0 ?.2 ordering can be made by the common rank (pq rank h fe1 = 70 to 250) in the rank classification.
power transistors 2 2sd2137, 2sd2137a i c ? v be h fe ? i c f t ? i c p c ? t a i c ? v ce v ce(sat) ? i c c ob ? v cb t on , t stg , t f ? i c area of safe operation (aso) 0 160 40 120 80 140 20 100 60 0 20 15 5 10 (1) t c =ta (2) without heat sink (p c =2.0w) (1) (2) ambient temperature t a ( ? c ) collector power dissipation p c ( w ) 012 10 8 26 4 0 6 5 4 3 2 1 t c =25 ? c 90ma 80ma 70ma 60ma 50ma 40ma 30ma 20ma 10ma i b =100ma collector to emitter voltage v ce ( v ) collector current i c ( a ) 0.01 0.1 1 10 0.03 0.3 3 0.01 0.03 0.1 0.3 1 3 10 30 100 i c /i b =8 t c =100 ? c 25 ? c 25 ? c collector current i c ( a ) collector to emitter saturation voltage v ce(sat) ( v ) 0 2.0 1.6 0.4 1.2 0.8 0 6 5 4 3 2 1 v ce =4v t c =100 ? c 25 ? c 25 ? c base to emitter voltage v be ( v ) collector current i c ( a ) 0.01 0.1 1 10 0.03 0.3 3 1 1000 100 10 3 30 300 v ce =4v 25 ? c 25 ? c t c =100 ? c collector current i c ( a ) forward current transfer ratio h fe 0.01 0.1 1 10 0.03 0.3 3 1 1000 100 10 3 30 300 v ce =5v f=10mhz t c =25 ? c collector current i c ( a ) transition frequency f t ( mhz ) 1 3 10 30 100 1 1000 100 10 3 30 300 i e =0 f=1mhz t c =25 ? c collector to base voltage v cb ( v ) collector output capacitance c ob ( pf ) 04 13 2 0.01 0.03 0.1 0.3 1 3 10 30 100 pulsed t w =1ms duty cycle=1% i c /i b =10 (i b1 = i b2 ) v cc =50v t c =25 ? c t stg t f t on collector current i c ( a ) switching time t on ,t stg ,t f ( s ) 1 10 100 1000 3 30 300 0.01 0.03 0.1 0.3 1 3 10 30 100 non repetitive pulse t c =25 ? c i cp i c 10ms dc t=1ms 2sd2137 2sd2137a collector to emitter voltage v ce ( v ) collector current i c ( a )
power transistors 3 2sd2137, 2sd2137a r th(t) ? t 10 4 10 10 3 10 1 10 2 110 3 10 2 10 4 0.1 1 10 100 10000 1000 note: r th was measured at ta=25 ? c and under natural convection. (1) without heat sink (2) with a 50 50 2mm al heat sink (1) (2) time t ( s ) thermal resistance r th (t) ( ? c/w )
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