d a t a sh eet product speci?cation file under discrete semiconductors, sc08b april 1991 discrete semiconductors blt50 uhf power transistor
april 1991 2 philips semiconductors product speci?cation uhf power transistor blt50 features smd encapsulation gold metallization ensures excellent reliability. description npn silicon planar epitaxial transistor encapsulated in a sot223 surface mounted envelope and designed primarily for use in hand-held radio equipment in the 470 mhz communications band. pinning - sot223 pin description 1 emitter 2 base 3 emitter 4 collector quick reference data rf performance at t s 60 c in a common emitter class-b test circuit (note 1). note 1. t s = temperature at soldering point of collector tab. pin configuration mode of operation f (mhz) v ce (v) p l (w) g p (db) h c (%) c.w. narrow band 470 7.5 1.2 > 10 > 55 handbook, halfpage e c b mbb012 fig.1 simplified outline and symbol. a ge 4 123 msb002 - 1 top view
april 1991 3 philips semiconductors product speci?cation uhf power transistor blt50 limiting values in accordance with the absolute maximum system (iec 134). note 1. t s = temperature at soldering point of collector tab. thermal resistance symbol parameter conditions min. max. unit v cbo collector-base voltage open emitter - 20 v v ceo collector-emitter voltage open base - 10 v v ebo emitter-base voltage open collector - 3v i c , i c(av) collector current dc or average value - 500 ma i cm collector current peak value f > 1 mhz - 1.5 a p tot total power dissipation f > 1 mhz; t s = 103 c (note 1) - 2w t stg storage temperature range - 65 150 c t j operating junction temperature - 175 c symbol parameter conditions max. unit r th j-s(dc) from junction to soldering point p tot = 2 w; t s = 103 c 36 k/w fig.2 dc soar. t s = 103 c. handbook, halfpage 10 2 mea217 10 v ce (v) i c (a) 1 0.1 1 0.5 0.2
april 1991 4 philips semiconductors product speci?cation uhf power transistor blt50 characteristics t j = 25 c. symbol parameter conditions min. typ. max. unit v (br)cbo collector-base breakdown voltage open emitter; i c = 5 ma 20 -- v v (br)ceo collector-emitter breakdown voltage open base; i c = 10 ma 10 -- v v (br)ebo emitter-base breakdown voltage open collector; i e = 1 ma 3 -- v i ces collector-emitter leakage current v be = 0; v ce = 10 v -- 250 m a h fe dc current gain v ce = 5 v; i c = 300 ma 25 -- e sbr second breakdown energy l = 25 mh; r be = 10 w; f = 50 hz 0.55 -- mj c c collector capacitance v cb = 7.5 v; i e = i e = 0; f = 1 mhz - 4.7 6 pf c re feedback capacitance v ce = 7.5 v; i c = 0; f = 1 mhz - 2.9 4.5 pf fig.3 collector capacitance as a function of collector-base voltage, typical values. i e =i e = 0; f = 1 mhz. handbook, halfpage 0810 10 0 2 mea218 246 v cb (v) c c (pf) 4 6 8
april 1991 5 philips semiconductors product speci?cation uhf power transistor blt50 application information rf performance at t s 60 c in a common emitter class-b test circuit. mode of operation f (mhz) v ce (v) p l (w) g p (db) h c (%) c.w. narrow band 470 7.5 1.2 > 10 typ. 11.2 > 55 typ. 65 fig.4 gain and efficiency as functions of load power, typical values. v ce = 7.5 v; f = 470 mhz. handbook, halfpage 16 12 4 0 8 mea219 0.6 1.0 1.4 2.2 1.8 g p (db) g p p l (w) 80 60 40 100 h h (%) fig.5 load power as a function of drive power, typical values. v ce = 7.5 v; f = 470 mhz. handbook, halfpage 0 100 p d (mw) p l (w) 200 2 0 1 mea220 ruggedness in class-b operation the blt50 is capable of withstanding a load mismatch corresponding to vswr = 50:1 through all phases at rated output power, up to a supply voltage of 9 v, f = 470 mhz and t s 60 c, where t s is the temperature at the soldering point of the collector tab.
april 1991 6 philips semiconductors product speci?cation uhf power transistor blt50 list of components (see test circuit) notes 1. american technical ceramics (atc) capacitor, type 100b or other capacitor of the same quality. 2. the striplines are mounted on a double copper-clad printed circuit board, with ptfe fibre-glass dielectric ( e r = 2.2); thickness 1 16 inch. component description value dimensions catalogue no. c1 ?lm dielectric trimmer 1.4 to 5.5 pf 2222 809 09004 c2 ?lm dielectric trimmer 1.4 to 5.5 pf 2222 809 09001 c3 ?lm dielectric trimmer 2 to 9 pf 2222 809 09002 c4 ?lm dielectric trimmer 2 to 9 pf 2222 809 09005 c5 multilayer ceramic chip capacitor (note 1) 100 pf c6 multilayer ceramic chip capacitor (note 1) 1 nf c7 63 v electrolytic capacitor 2.2 m f l1 stripline (note 2) 50 w 54 mm 4.7 mm l2 5 turns enamelled 0.4 mm copper wire int. dia. 3 mm l3, l7 grade 3b1 ferroxcube wideband rf choke 4312 020 36640 l4 stripline (note 2) 50 w 36 mm 4.7 mm l5 1 turn enamelled 1.4 mm copper wire 5 nh int. dia. 4 mm l6 3 turns enamelled 0.4 mm copper wire int. dia. 3 mm r1, r2 0.25 w metal ?lm resistor 10 w ,5% fig.6 class-b test circuit at f = 470 mhz. handbook, full pagewidth mba576 50 w 50 w c7 c6 c5 r2 l7 l6 c3 c4 l5 l4 tut l2 l3 r1 c2 c1 l1 + v cc
april 1991 7 philips semiconductors product speci?cation uhf power transistor blt50 fig.7 component layout for 470 mhz class-b test circuit. the circuit and components are situated on one side of a copper-clad ptfe fibre-glass board; the other side is unetched and serves as a ground plane. earth connections from the component side to the ground plane are made by means of fixing screws, hollow rivets and copper foil straps, as shown. handbook, full pagewidth mba575 l7 c7 c6 r2 l6 l5 c3 c4 l4 l2 c5 r1 l3 l1 c1 c2 v cc handbook, full pagewidth mba574 strap strap strap strap rivets (14x) mounting screws (8x) 140 mm 80 mm
april 1991 8 philips semiconductors product speci?cation uhf power transistor blt50 fig.8 input impedance (series components) as a function of frequency, typical values. class-b operation; v ce = 7.5 v; p l = 1.2 w. handbook, halfpage 350 450 z i ( w ) x i r i 550 650 4 3 1 0 2 mea221 f (mhz) fig.9 load impedance (series components) as a function of frequency, typical values. class-b operation; v ce = 7.5 v; p l = 1.2 w. handbook, halfpage 350 450 550 x l r l z l ( w ) 650 20 15 5 0 10 mea222 f (mhz) fig.10 definition of transistor impedance. handbook, halfpage mba451 z i z l fig.11 power gain as a function of frequency, typical values. class-b operation; v ce = 7.5 v; p l = 1.2 w. handbook, halfpage 350 450 550 g p (db) 650 16 12 4 0 8 mea223 f (mhz)
april 1991 9 philips semiconductors product speci?cation uhf power transistor blt50 package outline unit a 1 b p cd e e 1 h e l p qy w v references outline version european projection issue date iec jedec eiaj mm 0.10 0.01 1.8 1.5 0.80 0.60 b 1 3.1 2.9 0.32 0.22 6.7 6.3 3.7 3.3 2.3 e 4.6 7.3 6.7 1.1 0.7 0.95 0.85 0.1 0.1 0.2 dimensions (mm are the original dimensions) sot223 96-11-11 97-02-28 w m b p d b 1 e 1 e a a 1 l p q detail x h e e v m a a b b c y 0 2 4 mm scale a x 13 2 4 plastic surface mounted package; collector pad for good heat transfer; 4 leads sot223
april 1991 10 philips semiconductors product speci?cation uhf power transistor blt50 definitions life support applications these products are not designed for use in life support appliances, devices, or systems where malfunction of these products can reasonably be expected to result in personal injury. philips customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify philips for any damages resulting from such improper use or sale. data sheet status objective speci?cation this data sheet contains target or goal speci?cations for product development. preliminary speci?cation this data sheet contains preliminary data; supplementary data may be published later. product speci?cation this data sheet contains ?nal product speci?cations. limiting values limiting values given are in accordance with the absolute maximum rating system (iec 134). stress above one or more of the limiting values may cause permanent damage to the device. these are stress ratings only and operation of the device at these or at any other conditions above those given in the characteristics sections of the speci?cation is not implied. exposure to limiting values for extended periods may affect device reliability. application information where application information is given, it is advisory and does not form part of the speci?cation.
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